High coupling efficiency 2D metasurface integrated with strip waveguide in SOI for mid‐IR wavelengths.

Two‐dimensional (2D) metasurface integrated with strip waveguide in silicon‐on‐insulator (SOI) has been designed to achieve high coupling efficiency for 3.8 μm wavelength. The optimisation in period and radius has been achieved using 3D finite‐difference time‐domain (FDTD). The calculated coupling efficiency in the in‐plane waveguide for the out‐of‐plane surface illumination is over 90% with a bandwidth of 1 μm. The design is consistent with the available lithography using 400 nm thick SOI for mid‐IR applications. Finally, monolithic integration can be achieved using standard multi‐project wafer run. [ABSTRACT FROM AUTHOR]