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Charge injection and transport layers with optimum carrier transport properties are essential for stable and efficient organic light-emitting diode (OLED) devices. Herein, we report two tetraphenylethylene-diphenylamine derivatives, TPOMe and TPOSt having four and two methoxy substituents, respectively, and explore their potential as solution-processable hole injection layers (HILs) for OLEDs. Standard, Alq3-based green OLEDs with a simple device design were used to demonstrate the properties of the synthesized HILs, in comparison with a commercially available standard HIL, m-MTDATA. TPOMe-based device exhibited a current efficiency of 4.2 cd A−1, while TPOSt-based device showed 3.81 cd A−1 at 10 mA cm−2. Both the above devices showed better performance compared to a control device fabricated with the standard HIL, m-MTDATA, which showed a relatively lower current efficiency value (1.70 cd A−1 at 10 mA cm−2). Similarly, the maximum external quantum efficiency (EQE) of TPOMe (1.77%) and TPOSt (1.55%) were higher than that of the m-MTDATA-based device (1.40%). Although m-MTDATA device has better luminance and hole mobility compared to TPOMe and TPOSt devices, the optimum charge balance in the latter devices leads to better current efficiency and EQE. [ABSTRACT FROM AUTHOR]

The fabrication of optoelectronic devices using low‐cost inkjet printing techniques is a topic of great interest to the scientific and industrial community and represents a step toward the full deployment of solution‐processable organic light emitting diodes (OLEDs), particularly for commercial lighting and signaling applications. Herein, the inkjet printing of tBuCzDBA (9,10‐bis(4‐(3,6‐di‐tert‐butyl‐9H‐carbazol‐9‐yl)−2,6‐dimethylphenyl)−9,10‐diboraanthracene) is reported, a high‐performing thermally activated delayed fluorescence (TADF) emitter for OLEDs. Optimizing the surface tension values of the ink formulations and the associated wetting behavior are crucial parameters for achieving a uniform and homogeneous printed thin film. In particular, it is observed that using a proper mixture of solvents with different surface tensions, it is possible to generate Marangoni flows inside the drop, which triggers a very fast drying process, ensuring optimized morphological and optical properties in the inkjet printed tBuCzDBA‐based film. OLEDs exploiting this film as an emissive layer are then fabricated, achieving a maximum luminance of 32 000 cd m−2, a current efficiency of 27.5 cd A−1, and an external quantum efficiencyof 10%. To the best of the knowledge, this is the highest efficiency reported to date for self‐hosted TADF inkjet‐printed OLEDs. [ABSTRACT FROM AUTHOR]

Abstract The fabrication of optoelectronic devices using low‐cost inkjet printing techniques is a topic of great interest to the scientific and industrial community and represents a step toward the full deployment of solution‐processable organic light emitting diodes (OLEDs), particularly for commercial lighting and signaling applications. Herein, the inkjet printing of tBuCzDBA (9,10‐bis(4‐(3,6‐di‐tert‐butyl‐9H‐carbazol‐9‐yl)−2,6‐dimethylphenyl)−9,10‐diboraanthracene) is reported, a high‐performing thermally activated delayed fluorescence (TADF) emitter for OLEDs. Optimizing the surface tension values of the ink formulations and the associated wetting behavior are crucial parameters for achieving a uniform and homogeneous printed thin film. In particular, it is observed that using a proper mixture of solvents with different surface tensions, it is possible to generate Marangoni flows inside the drop, which triggers a very fast drying process, ensuring optimized morphological and optical properties in the inkjet printed tBuCzDBA‐based film. OLEDs exploiting this film as an emissive layer are then fabricated, achieving a maximum luminance of 32 000 cd m−2, a current efficiency of 27.5 cd A−1, and an external quantum efficiencyof 10%. To the best of the knowledge, this is the highest efficiency reported to date for self‐hosted TADF inkjet‐printed OLEDs.

The effect of light illumination intensity on the stability of In-Zn-Sn-O (IZTO) thin-film transistors (TFTs) array fabricated by solution processed is investigated. Comparison with positive bias stress, the light illumination suppresses the ${V}_{\text {th}}$ shift under positive bias illumination stress because of the increase in the free electrons induced by the ionized oxygen vacancies in the IZTO channel layer, but transfer characteristics show two-stage degradation under negative bias illumination stress (NBIS). The hump phenomenon is induced after NBIS, and the light illumination intensity is higher, the hump phenomenon becomes more serious. The hump phenomenon is relevant to ionized oxygen vacancies, which act as shallow donor-like states near the conduction-band minimum in IZTO. [ABSTRACT FROM AUTHOR]

As an earth-abundant p-type semiconductor, copper sulfide (Cu2S) is an attractive material for application in photovoltaic devices. However, it suffers from a minority carrier diffusion length that is less than the length required for complete light absorption. Core-shell nanowires and nanorods have the potential to alleviate this difficulty because they decouple the length scales of light absorption and charge collection. To achieve this geometry using Cu2S, cation exchange was applied to an array of CdS nanorods to produce well-defined CdS-Cu2S core-shell nanorods. Previous work has demonstrated single-nanowire photovoltaic devices from this material system, but in this work, the cation exchange chemistry has been applied to nanorod arrays to produce ensemble-level devices with microscale sizes. The core-shell nanorod array devices show power conversion efficiencies of up to 3.8%. In addition, these devices are stable when measured in air after nearly one month of storage in a desiccator. These results are a first step in the development of large-area nanostructured Cu2S-based photovoltaics that can be processed from solution.

An approach based on a solution-based synthesis that produces a thermally stable Ag/oxide/S₂ Te₃ -Te metal-semiconductor heterostructure is described. With this approach, a figure of merit of zT = 1.0 at 460 K is achieved, a record for a heterostructured material made using wet chemistry. Combining experiments and theory shows that the large increase in the material's Seebeck coefficient results from hot carrier filtering.

Abstract Due to their outstanding performance, low cost, ease of fabrication, diverse photonic, and optoelectronic applications, metal halides perovskite have attracted extensive interest in photodetector applications. Currently, devices made by metal oxides, metal sulfides, and 2D materials had achieved good responsivity, but suffered from high dark current, slow response speed, small on-off ratio, and poor stability. Whole performances of these photodetectors are not satisfactory. Here, a lateral perovskite (CH3NH3PbBr3)/Ethanolamine/TiO2 (in ethanol) trilayer photodetector is designed for achieving high performance. EA treatment enhances electron extraction and reduces undesired recombination. This trilayer device shows good performances with low dark current of 1.5 × 10−11 A, high on-off ratio of 2700, high photodetectivity of 1.51 × 1012 Jones, high responsivity of 0.13 A W−1, and high stability, comparative to conventional single layer devices. This work provides the way to improve the performance of metal halide perovskite photodetectors.

Solution-processed hybrid solar cells have been well developed in the last twenty years due to the advantages of low cost, low material-consuming and simple fabricating technology. However, the performance, stability and film quality of hybrid solar cells need to be further improved for future commercial application (with a lifetime up to 20 years and power conversion efficiency higher than 15%). By combining the merits of organic polymers and nanocrystals (NC), the reasonable design of interface engineering and device architecture, the performance coupled with stability of hybrid solar cells can be significantly improved. This review gives a brief conclusive introduction to the progress on solution-processed organic/inorganic semiconductor hybrid solar cells, including a summary of the development of hybrid solar cells in recent years, the strategy of hybrid solar cells with different structures and the incorporation of new organic hole transport materials with new insight into device processing for high efficiency. This paper also puts forward some suggestions and guidance for the future development of high-performance NC-based photovoltaics. [ABSTRACT FROM AUTHOR]

A novel composite based on a polymer (P(VDF-TrFE)) and a two-dimensional material (graphene flower) was proposed as the active layer of an interdigitated electrode (IDEs) based humidity sensor. Silver (Ag) IDEs were screen printed on a flexible polyethylene terephthalate (PET) substrate followed by spin coating the active layer of P(VDF-TrFE)/graphene flower on its surface. It was observed that this sensor responds to a wide relative humidity range (RH%) of 8–98% with a fast response and recovery time of 0.8 s and 2.5 s for the capacitance, respectively. The fabricated sensor displayed an inversely proportional response between capacitance and RH%, while a directly proportional relationship was observed between its impedance and RH%. P(VDF-TrFE)/graphene flower-based flexible humidity sensor exhibited high sensitivity with an average change of capacitance as 0.0558 pF/RH%. Stability of obtained results was monitored for two weeks without any considerable change in the original values, signifying its high reliability. Various chemical, morphological, and electrical characterizations were performed to comprehensively study the humidity-sensing behavior of this advanced composite. The fabricated sensor was successfully used for the applications of health monitoring and measuring the water content in the environment.

Organic solar cells, processed from solution at various optimizing device parameters, were investigated. The device’s active-layer film-thicknesses were optimized while depositing at different spin speeds where 120-nm-thick layer (D2) gives maximum power conversion efficiency of 2.9%, annealed at 165 °C. The reason is ascribed as sufficient light absorption, excitons dissociation/diffusion and carriers transportation. In the case of Ca/Al, being as a top electrode rather than LiF/Al and Al, substantial efficiency enhancement, from 1.70% to 2.78%, was obtained at low temperature, 130 °C, providing ease for charge collection and pertaining conductive nature of increased resistivity at high temperature.

Flexible MoO3/silver nanowire (AgNW)/MoO3/TiO2/Epoxy electrodes with comparable performance to ITO were fabricated by a scalable solution-processed method with lamination assistance for transparent and conductive applications. Silver nanoparticle-based electrodes were also prepared for comparison. Using a simple spin-coating and lamination-assisted planarization method, a full solution-based approach allows preparation of AgNW-based composite electrodes at temperatures as low as 140 °C. The resulting flexible AgNW-based electrodes exhibit higher transmittance of 82% at 550 nm and lower sheet resistance about 12–15 Ω sq−1, in comparison with the values of 68% and 22–25 Ω sq−1 separately for AgNP based electrodes. Scanning electron microscopy (SEM) and Atomic force microscopy (AFM) reveals that the multi-stacked metal-oxide layers embedded with the AgNWs possess lower surface roughness (

The use of solution-processed photovoltaics is a low cost, low material-consuming way to harvest abundant solar energy. Organic semiconductors based on perovskite or colloidal quantum dot photovoltaics have been well developed in recent years; however, stability is still an important issue for these photovoltaic devices. By combining solution processing, chemical treatment, and sintering technology, compact and efficient CdTe nanocrystal (NC) solar cells can be fabricated with high stability by optimizing the architecture of devices. Here, we review the progress on solution-processed CdTe NC-based photovoltaics. We focus particularly on NC materials and the design of devices that provide a good p–n junction quality, a graded bandgap for extending the spectrum response, and interface engineering to decrease carrier recombination. We summarize the progress in this field and give some insight into device processing, including element doping, new hole transport material application, and the design of new devices. [ABSTRACT FROM AUTHOR]

Solution-processed hybrid solar cells have been well developed in the last twenty years due to the advantages of low cost, low material-consuming and simple fabricating technology. However, the performance, stability and film quality of hybrid solar cells need to be further improved for future commercial application (with a lifetime up to 20 years and power conversion efficiency higher than 15%). By combining the merits of organic polymers and nanocrystals (NC), the reasonable design of interface engineering and device architecture, the performance coupled with stability of hybrid solar cells can be significantly improved. This review gives a brief conclusive introduction to the progress on solution-processed organic/inorganic semiconductor hybrid solar cells, including a summary of the development of hybrid solar cells in recent years, the strategy of hybrid solar cells with different structures and the incorporation of new organic hole transport materials with new insight into device processing for high efficiency. This paper also puts forward some suggestions and guidance for the future development of high-performance NC-based photovoltaics.

We report the effect of bias stress on the drain current and threshold voltage of n-channel thin-film transistors based on solution processed In _2 O _3 layers. Application of a positive gate bias for variable time-periods led to displacements of the transfer curves in the positive gate bias direction. On switching off the gate bias, the transfer curves returned close to their pre-stress state on a timescale similar to that when the gate bias was switched on. The time dependence of the threshold voltage shift is described well by a stretched-exponential model. The temporal behaviour of the threshold voltage shifts is consistent with charge trapping as the dominant effect, although some defect formation cannot be ruled out.

A series of Eu ^3+ and Tb ^3+ co-doped CaMoO _4 /SrMoO _4 luminescent thin films were prepared by a facile solution method, and they were annealed at 550 °C for 2 h. The luminescent properties of the thin films were studied, which involve the energy transfer from Tb ^3+ to Eu ^3+ . The emission color can be changed from green to red, with increasing Eu ^3+ doping concentration in Tb ^3+ -doped CaMoO _4 /SrMoO _4 thin films. In addition, it was observed that the PL intensity of Eu ^3+ will enhance when Tb ^3+ ions are incorporated into Eu ^3+ -doped CaMoO _4 /SrMoO _4 thin films. The optical band gaps of the luminescent thin films are found to be in the range of 4.49 to 4.72 eV. These results revealed that Eu ^3+ and Tb ^3+ co-doped CaMoO _4 /SrMoO _4 luminescent thin films have a significantly potential application in electroluminescent devices.

Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs), the high operation voltage resulting from the low gate capacitance density of traditional SiO2 remains a severe limitation that hinders OTFTs'development in practical applications. In this regard, developing new materials with high-k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. Here, we introduce a simple solution-based technique to fabricate high-k metal oxide dielectric system (ATO) at low-temperature, which can be used effectively to realize low-voltage operation of OTFTs. On the other hand, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. By optimizing the above two interfaces with octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) and properly modified low-cost Cu, obviously improved device performance is attained in our low-voltage OTFTs. Further more, organic electronic devices on flexible substrates have attracted much attention due to their low-cost, rollability, large-area processability, and so on. Basing on the above results, outstanding electrical performance is achieved in flexible devices. Our studies demonstrate an effective way to realize low-voltage, high-performance OTFTs at low-cost.

In this study, a transparent memristor with a configuration of Au/SnO 2 /FTO is fabricated by a simple solution process at low temperature and further utilized to mimic biological synapses. A series of significant synaptic functions, including nonlinear transmission characteristics, spike-rate-dependent plasticity (SRDP), short-term plasticity (STP) and long-term plasticity (LTP) are emulated. The transition from short-term to long-term plasticity is also investigated in the device by repeated stimulation. The nonlinear rectification characteristic in the current memristor is attributed to the Schottky barrier at the Au/SnO 2 interface. By controlling the oxygen vacancy migration induced under electrical input, the barrier at the interface can be modified, giving rise to the different synaptic functions. These results suggest that the proposed Au/SnO 2 /FTO memristor in this study is a promising synaptic device for artificial neural network applications. [ABSTRACT FROM AUTHOR]

Nanocrystal solar cells (NCs) allowfor large scale solution processing under ambient conditions, permitting a promising approach for low-cost photovoltaic products. Although an up to 10% power conversion efficiency (PCE) has been realized with the development of device fabrication technologies, the open circuit voltage (Voc) of CdTeNC solar cells has stagnated below0.7 V,which is significantly lower thanmost CdTe thin film solar cells fabricated by vacuumtechnology (around 0.8 V~0.9 V). To further improve theNC solar cells' performance, an enhancement in the Voc towards 0.8-1.0 V is urgently required. Given the unique processing technologies and physical properties in CdTeNC, the design of an optimized band alignment and improved junction quality are important issues to obtain efficient solar cells coupled with high Voc. In this work, an efficient method was developed to improve the performance and Voc of solution-processed CdTe nanocrystal/TiO2 hetero-junction solar cells. A thin layer of solution-processed CdS NC film (~5 nm) as introduced into CdTe NC/TiO2 to construct hetero-junction solar cells with an optimized band alignment and p-n junction quality, which resulted in a low dark current density and reduced carrier recombination. As a result, devices with improved performance (5.16% compared to 2.63% for the control device) and a Voc as high as 0.83 V were obtained; this Voc value is a record for a solution-processed CdTe NC solar cell. [ABSTRACT FROM AUTHOR]

The CdTe nanocrystal (NC) is an outstanding, low-cost photovoltaic material for highly efficient solution-processed thin-film solar cells. Currently, most CdTe NC thin-film solar cells are based on CdSe, ZnO, or CdS buffer layers. In this study, a wide bandgap and Cd-free ZnSe NC is introduced for the first time as the buffer layer for all solution-processed CdTe/ZnSe NC hetero-junction thin-film solar cells with a configuration of ITO/ZnO/ZnSe/CdTe/MoOx/Au. The dependence of the thickness of the ZnSe NC film, the annealing temperature and the chemical treatment on the performance of NC solar cells are investigated and discussed in detail. We further develop a ligand-exchanging strategy that involves 1,2-ethanedithiol (EDT) during the fabrication of ZnSe NC film. An improved power conversion efficiency (PCE) of 3.58% is obtained, which is increased by 16.6% when compared to a device without the EDT treatment. We believe that using ZnSe NC as the buffer layer holds the potential for developing high-efficiency, low cost, and stable CdTe NC-based solar cells. [ABSTRACT FROM AUTHOR]

High-performance thin-film transistors (TFTs) were obtained by incorporating small amount of tungsten (W) into amorphous indium zinc oxide (IZO)-based thin films via a solution process. Compared with original IZO TFTs, 0.2-wt% W-doped IZO TFTs exhibit improved bias stress stability and field-effect mobility of 30.5 cm²/V·s. Meanwhile, the bias stress stability of IZO TFTs can be further enhanced with 0.5-wt% W-doping. The pulsed current-voltage (I-V) method is employed to study the hysteresis and charging behavior of the W-doped IZO TFTs. The X-ray photoelectron spectroscopy analysis and the pulsed I-V measurement results suggest that these desirable performances could be attributed to the suppression of excessive oxygen vacancies and improved interface quality because of W-doping. The results represent an effective strategy to achieve high-performance solution-processed amorphous oxide-based TFTs with desirable stability by W-doping. [ABSTRACT FROM AUTHOR]

Solution-processed CdTe nanocrystals solar cells have attracted much attention due to their low cost, low material consumption, and potential for roll-to-roll production. Among all kinds of semiconductor materials, CdS exhibits the lowest lattice mismatch with CdTe, which permits high junction quality and high device performance. In this study, high quality CdS nanocrystals were prepared by a non-injection technique with tetraethylthiuram disufide and 2,20-dithiobisbenzothiazole as the stabilizers. Based on the CdTe and CdS nanocrystals, devices with the architecture of ITO/ZnO/CdS/CdTe/MoOx/Au were fabricated successfully by a solution process under ambient condition. The effects of annealing conditions, film thickness, and detailed device structure on the CdTe/CdS nanocrystal solar cells were investigated and discussed in detail. We demonstrate that high junction quality can be obtained by using CdS nanocrystal thin film compared to traditional CdS film via chemical bath deposition (CBD). The best device had short circuit current density (Jsc), open circuit voltage (Voc) and fill factor (FF) of 17.26 mA/cm2, 0.56 V, and 52.84%, respectively, resulting in a power conversion efficiency (PCE) of 5.14%, which is significantly higher than that reported using CBD CdS as the window layer. This work provides important suggestions for the further improvement of efficiency in CdTe nanocrystal solar cells. [ABSTRACT FROM AUTHOR]

The use of solution-processed photovoltaics is a low cost, low material-consuming way to harvest abundant solar energy. Organic semiconductors based on perovskite or colloidal quantum dot photovoltaics have been well developed in recent years; however, stability is still an important issue for these photovoltaic devices. By combining solution processing, chemical treatment, and sintering technology, compact and efficient CdTe nanocrystal (NC) solar cells can be fabricated with high stability by optimizing the architecture of devices. Here, we review the progress on solution-processed CdTe NC-based photovoltaics. We focus particularly on NC materials and the design of devices that provide a good p−n junction quality, a graded bandgap for extending the spectrum response, and interface engineering to decrease carrier recombination. We summarize the progress in this field and give some insight into device processing, including element doping, new hole transport material application, and the design of new devices.

CdTe nanocrystal (NC) solar cells have received much attention in recent years due to their low cost and environmentally friendly fabrication process. Nowadays, the back contact is still the key issue for further improving device performance. It is well known that, in the case of CdTe thin-film solar cells prepared with the close-spaced sublimation (CSS) method, Cu-doped CdTe can drastically decrease the series resistance of CdTe solar cells and result in high device performance. However, there are still few reports on solution-processed CdTe NC solar cells with Cu-doped back contact. In this work, ZnTe:Cu or Cu:Au back contact layer (buffer layer) was deposited on the CdTe NC thin film by thermal evaporation and devices with inverted structure of ITO/ZnO/CdSe/CdTe/ZnTe:Cu (or Cu)/Au were fabricated and investigated. It was found that, comparing to an Au or Cu:Au device, the incorporation of ZnTe:Cu as a back contact layer can improve the open circuit voltage (Voc) and fill factor (FF) due to an optimized band alignment, which results in enhanced power conversion efficiency (PCE). By carefully optimizing the treatment of the ZnTe:Cu film (altering the film thickness and annealing temperature), an excellent PCE of 6.38% was obtained, which showed a 21.06% improvement compared with a device without ZnTe:Cu layer (with a device structure of ITO/ZnO/CdSe/CdTe/Au).

In this work, resistance switching behaviours in solution processed chromium (Cr)-doped strontium titanate (SrTiO 3 ) films have been investigated. Undoped SrTiO 3 film shows I - V characteristics of typical nonlinear resistor and no resistance hysteresis loops are observed. On the contrary, Cr-doped SrTiO 3 films show stable and reversible hysteresis loops, which can be controlled by applying different voltage bias. Based on a series of characterization results, including X-ray diffraction (XRD), Raman and X-ray photoelectron spectroscopy (XPS), we infer that Ti 4+ is substituted by Cr 3+ , giving rise to increased concentration of oxygen vacancies. Therefore, the observed resistance switching phenomenon is attributed to voltage driven oxygen vacancy migration. Furthermore, gradually decreased overall resistance is also realized under repeated sweeping cycles. [ABSTRACT FROM AUTHOR]

A donor-acceptor (D-A) type indoline dye, D149, was used as an electron donor in solution-processed organic solar cells (OSCs). For bulk-heterojunction (BHJ) type OSCs with PC70BM as electron acceptor, the power conversion efficiency (PCE) is sensitive to the amount of D149 in the D149/PC70BM blend film. When the concentration of D149 in the blend film was as low as 5%, the highest PCE of up to 1.29%, together with a short-circuit current density (Jsc) of 4.58 mA·cm−2, an open-circuit voltage (Voc) of 0.90 V and a fill factor (FF) of 0.31, was achieved. In order to improve the PCE of D149-based OSCs, a bilayer-heterojunction configuration with C70 as electron acceptor has been employed. By optimizing the thickness of the D149 layer and varying the electron- and hole-transport layers, a highest PCE of up to 2.28% with a Jsc of 4.38 mA·cm−2, a Voc of 0.77 V, and an FF of 0.62 was achieved under AM 1.5G solar illumination (100 mW·cm−2).