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Bias stability of solution-processed In2O3 thin film transistors
- Source :
- JPhys Materials, Vol 4, Iss 1, p 015003 (2020)
- Publication Year :
- 2020
- Publisher :
- IOP Publishing, 2020.
-
Abstract
- We report the effect of bias stress on the drain current and threshold voltage of n-channel thin-film transistors based on solution processed In _2 O _3 layers. Application of a positive gate bias for variable time-periods led to displacements of the transfer curves in the positive gate bias direction. On switching off the gate bias, the transfer curves returned close to their pre-stress state on a timescale similar to that when the gate bias was switched on. The time dependence of the threshold voltage shift is described well by a stretched-exponential model. The temporal behaviour of the threshold voltage shifts is consistent with charge trapping as the dominant effect, although some defect formation cannot be ruled out.
Details
- Language :
- English
- ISSN :
- 25157639
- Volume :
- 4
- Issue :
- 1
- Database :
- Directory of Open Access Journals
- Journal :
- JPhys Materials
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.32e029e66a4249f68bfecad2e4d33c7c
- Document Type :
- article
- Full Text :
- https://doi.org/10.1088/2515-7639/abc608