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The article discusses the results of plasma chemical etching of silicon dioxide in the fluorine-containing medium in the manufacture of semiconductor devices. Delivered and processed to obtain the solution of the smoothed microrelief contact windows in SiO2 other materials. The solution of the problem is closely connected with the problem of an isotropic plasma chemical etching, when the rate of lateral (horizontal) equal to the speed of the vertical etching, which allows to obtain smooth wall structures with maximum care dimensions on the border with photoresist or other masking coating.

This article presents the results of a computer simulation of whispering gallery modes in the structure of a silicon disk resonator with a wedge-shaped profile made on a silicon-on-isolator base (SOI). The rationale for the choice of silicon as a material for its manufacturing is given. The results of the study of the influence of the wedge angle on the whispering gallery mode parameters (WGM) are presented. The optimum wedge angle of a silicon disk resonator is determined, which ensures the minimum loss and maximum mode stability. The technological aspects of plasma-chemical etching processes for forming a wedge-shaped profile of the edge of a silicon disk resonator are studied.

Atmospheric pressure plasma technologies are a potential substitution for wet chemical and vacuum processes in the production of crystalline silicon solar cells, leading to a simplified in-line processing chain. In this contribution, a plasma chemical etching technology is presented as a basic step for a future continuous production process. A linearly extended DC arc discharge is used for activation of the etching gases. An Ar-N2 mixture is fed through the plasma source; etch gases are injected into the afterglow plasma, near the substrate. Controlled purge gas systems prevent the contamination of the reaction zone with air or moisture as well as the release of reaction products. The plasma source was studied by a noninvasive in-line monitoring of the DC arc phenomena. Silicon etching rates can be controlled by the etch gas composition and the plasma conditions. Fourier Transform infrared spectroscopy of the waste gas was applied to monitor the current etching rates. First industrial tests confirmed standard efficiencies of the cells after edge isolation by atmospheric pressure plasma etching. [ABSTRACT FROM AUTHOR]

Mixers based on superconductor–insulator–superconductor (SIS) tunnel junctions are the best input devices at frequencies from 0.1 to 1.2 THz. This is explained by both the extremely high nonlinearity of such elements and their extremely low intrinsic noise. Submicron tunnel junctions are necessary to realize the ultimate parameters of SIS receivers, which are used as standard devices on both ground and space radio telescopes around the world. The technology for manufacturing submicron Nb–AlN–NbN tunnel junctions using electron-beam lithography was developed and optimized. This article presents the results on the selection of the exposure dose, development time, and plasma chemical etching parameters to obtain high-quality junctions (the ratio of the resistances below and above the gap Rj/Rn). The use of a negative-resist ma-N 2400 with lower sensitivity and better contrast in comparison with a negative-resist UVN 2300-0.5 improved the reproducibility of the structure fabrication process. Submicron (area from 2.0 to 0.2 µm2) Nb–AlN–NbN tunnel junctions with high current densities and quality parameters Rj/Rn > 15 were fabricated. The spread of parameters of submicron tunnel structures across the substrate and the reproducibility of the cycle-to-cycle process of tunnel structure fabrication were measured. [ABSTRACT FROM AUTHOR]

This article presents the results of a computer simulation of whispering gallery modes in the structure of a silicon disk resonator with a wedge-shaped profile made on a silicon-on-isolator base (SOI). The rationale for the choice of silicon as a material for its manufacturing is given. The results of the study of the influence of the wedge angle on the whispering gallery mode parameters (WGM) are presented. The optimum wedge angle of a silicon disk resonator is determined, which ensures the minimum loss and maximum mode stability. The technological aspects of plasma-chemical etching processes for forming a wedge-shaped profile of the edge of a silicon disk resonator are studied. [ABSTRACT FROM AUTHOR]