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Bu çalışma, 14-19 Ekim 2015 tarihlerinde Kemer[Türkiye]’düzenlenen 2. International Conference on Computational and Experimental Science and Engineering (ICCESEN) Kongresi‘nde bildiri olarak sunulmuştur. Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/carbon nanotube, single-walled)/n-GaAs ([P(EGDMA-VTAZ)-CNSW]/n-GaAs) diode was fabricated by using surface polymerization method. Electrical properties were carried out at several temperatures. Dark current mechanisms were investigated by using current-voltage (I-V) measurements. It was shown that the fabricated structure exhibited rectification behaviour that makes it a good candidate for electronic device applications.

In this work, we report on the switching performance of AlGaN/GaN lateral Tri-Anode SBDs. The Tri-Anode architecture leads to a more than 50% reduction in the device charge with respect to conventional planar structure, confirmed both by capacitive and reverse-recovery measurements, which results in a much improved $R_{{\mathrm {oN}}}\cdot Q_{\mathrm{rr}}$ figure-of-merit. The Tri-Anode excellent switching performance, combined with the superior DC behavior, makes these devices very promising for future ultra-fast and high-power applications. The diode performance was demonstrated by realizing a monolithically-integrated Diode Bridge Rectifier able to operate at high frequency and achieve AC to DC conversion. These results reveal the outstanding potential of GaN Tri-Anode SBD for ultrafast, large power-density and high-efficiency future power integrated circuits.