1. Caractérisation de l'interface couche implantée substrat semi-isolant LEC GaAs
- Author
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J.P. David, A. Roizes, M. Bonnet, N. Visentin, and J. Icole
- Subjects
Annealing (metallurgy) ,Analytical chemistry ,Mineralogy ,chemistry.chemical_element ,02 engineering and technology ,substrate ,hole traps ,compensation centres ,mean mobilities ,relaxation ,Hall effect ,deep traps ,B sub 2 O sub 3 encapsulant humidity level ,0202 electrical engineering, electronic engineering, information engineering ,deep levels ,ion implantation ,implantation ,Ingot ,Gallium ,LEC GaAs ingot growth conditions ,carrier mobility ,crystal growth from melt ,Arsenic ,Chemistry ,acceptor HL 10 centre ,020208 electrical & electronic engineering ,020206 networking & telecommunications ,semiconductor ,Acceptor ,gallium arsenide ,semiconductor growth ,stoichiometry ,semiinsulating ,implanted layer ,[PHYS.HIST]Physics [physics]/Physics archives ,III V semiconductors ,annealing ,Stoichiometry - Abstract
We have studied the influence of LEC GaAs ingot growth conditions on the deep traps at the interface of implanted layer and semi-insulating substrate. Hall effect and deep trap relaxation experiments have been made. The B 2 O 3 encapsulant humidity level induced an acceptor HL 10 centre in the substrate after implantation and annealing. An initial arsenic rich stoichiometry of the melt allows iron insertion on gallium sites and a greater substrate effect. There is a correlation between compensation centres and mean mobilities of the implanted layers Effet des conditions d'elaboration des supports semi-isolants non dopes prepares par la methode LEC sur les centres profonds presents a l'interface couche implantee-substrat semi-isolant et sur la mobilite moyenne des couches realisees
- Published
- 1983
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