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EL2 distribution in LEC GaAs ingots and wafers
- Source :
- Revue de Physique Appliquée, Revue de Physique Appliquée, Société française de physique / EDP, 1988, 23 (5), pp.739-746. ⟨10.1051/rphysap:01988002305073900⟩
- Publication Year :
- 1988
- Publisher :
- HAL CCSD, 1988.
-
Abstract
- A combination of electrical and optical mapping experiments has been used to obtain the EL2 distribution patterns in semi-insulating GaAs wafers. The influence of growing conditions such as stoichiometry, mass fraction solidified and moisture in the encapsulant is shown in terms of EL2 uniformity and residual doping level.
- Subjects :
- Materials science
Distribution (number theory)
residual doping level
02 engineering and technology
01 natural sciences
Gallium arsenide
chemistry.chemical_compound
Condensed Matter::Materials Science
Hall effect
0103 physical sciences
ingots
Wafer
010302 applied physics
business.industry
impurity and defect absorption spectra of inorganic solids
GaAs
EL2 distribution
semiconductor
021001 nanoscience & nanotechnology
gallium arsenide
optical mapping
Semiconductor
chemistry
[PHYS.HIST]Physics [physics]/Physics archives
III V semiconductors
Optoelectronics
defect electron energy states
0210 nano-technology
business
electrical mapping
wafers
Subjects
Details
- Language :
- English
- ISSN :
- 00351687 and 27773671
- Database :
- OpenAIRE
- Journal :
- Revue de Physique Appliquée, Revue de Physique Appliquée, Société française de physique / EDP, 1988, 23 (5), pp.739-746. ⟨10.1051/rphysap:01988002305073900⟩
- Accession number :
- edsair.doi.dedup.....c9d7195a713a07107324d6c6128dae09
- Full Text :
- https://doi.org/10.1051/rphysap:01988002305073900⟩