Search

Your search keyword '"Mohamed Boukhicha"' showing total 9 results
Start Over Author "Mohamed Boukhicha" Search Limiters Full Text
9 results on '"Mohamed Boukhicha"'

1. High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation

Author

Quentin Wilmart, Mohamed Boukhicha, Holger Graef, David Mele, Jose Palomo, Michael Rosticher, Takashi Taniguchi, Kenji Watanabe, Vincent Bouchiat, Emmanuel Baudin, Jean-Marc Berroir, Erwann Bocquillon, Gwendal Fève, Emiliano Pallecchi, and Bernard Plaçais

Subjects
graphene transistor, velocity saturation, high-frequency, dirac pinch-off, contact gating, Technology, Engineering (General). Civil engineering (General), TA1-2040, Biology (General), QH301-705.5, Physics, QC1-999, Chemistry, QD1-999
Abstract

The current understanding of physical principles governing electronic transport in graphene field effect transistors (GFETs) has reached a level where we can model quite accurately device operation and predict intrinsic frequency limits of performance. In this work, we use this knowledge to analyze DC and RF transport properties of bottom-gated graphene on boron nitride field effect transistors exhibiting pronounced velocity saturation by substrate hyperbolic phonon polariton scattering, including Dirac pinch-off effect. We predict and demonstrate a maximum oscillation frequency exceeding 20 GHz . We discuss the intrinsic 0.1 THz limit of GFETs and envision plasma resonance transistors as an alternative for sub-THz narrow-band detection.

Published
2020
Full Text
View/download PDF

2. RF compressibility of topological surface and interface states in metal–hBN–Bi 2 Se 3 capacitors

Author

Kenji Watanabe, José Palomo, T. Taniguchi, Gwendal Fève, T Wilde, Bernard Plaçais, J. Duffy, Jean-Marc Berroir, A. Inhofer, Erwann Bocquillon, Mohamed Boukhicha, Badih A. Assaf, Laboratoire de physique de l'ENS - ENS Paris (LPENS (UMR_8023)), École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Université Paris Diderot - Paris 7 (UPD7), Northeastern University [Boston], Brookhaven National Laboratory [Upton, NY] (BNL), U.S. Department of Energy [Washington] (DOE)-UT-Battelle, LLC-Stony Brook University [SUNY] (SBU), State University of New York (SUNY)-State University of New York (SUNY), National Institute for Materials Science (NIMS), Physique Mésoscopique, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Université Paris Diderot - Paris 7 (UPD7)-École normale supérieure - Paris (ENS Paris), University of Notre Dame [Indiana] (UND), Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Université Paris Diderot - Paris 7 (UPD7)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Brookhaven National Laboratory [Upton] (BNL), Stony Brook University [SUNY] (SBU), and Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Université Paris Diderot - Paris 7 (UPD7)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS)

Subjects
Surface (mathematics), Materials science, Interface (Java), FOS: Physical sciences, 02 engineering and technology, 01 natural sciences, law.invention, Metal, Quantum capacitance, symbols.namesake, law, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, General Materials Science, 010306 general physics, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Materials Science (cond-mat.mtrl-sci), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Capacitor, Dirac fermion, Topological insulator, visual_art, Compressibility, visual_art.visual_art_medium, symbols, 0210 nano-technology
Abstract

The topological state that emerges at the surface of a topological insulator (TI) and at the TI-substrate interface are studied in metal-hBN-Bi2Se3 capacitors. By measuring the RF admittance of the capacitors versus gate voltage, we extract the compressibility of the Dirac state located at a gated TI surface. We show that even in the presence of an ungated surface that hosts a trivial electron accumulation layer, the other gated surface always exhibits an ambipolar effect in the quantum capacitance. We succeed in determining the velocity of surface Dirac fermions in two devices, one with a passivated surface and the other with a free surface that hosts trivial states. Our results demonstrate the potential of RF quantum capacitance techniques to probe surface states of systems in the presence of a parasitic density-of-states., Comment: J. Phys.: Mater. Focus on Topological Matter

Published
2019
Full Text
View/download PDF

3. Bifacial Multilayer Graphene Float Transfer

Author

Joseph A. Andrade, Amanda J. Carr, Mohamed Boukhicha, Jan Folkson, and Matthew D. Eisaman

Subjects
Biomaterials, Materials science, Float (project management), business.industry, Graphene, law, Electrochemistry, Optoelectronics, Condensed Matter Physics, business, Cvd graphene, Electronic, Optical and Magnetic Materials, law.invention
Published
2020
Full Text
View/download PDF

4. rf Quantum Capacitance of the Topological Insulator Bi2Se3 in the Bulk Depleted Regime for Field-Effect Transistors

Author

E. Bocquillon, Bernard Plaçais, T. Taniguchi, Kenji Watanabe, A. Inhofer, Mohamed Boukhicha, J.-M. Berroir, José Palomo, Badih A. Assaf, I. Estève, Gwendal Fève, and J. Duffy

Subjects
Materials science, business.industry, Dirac (software), Gate dielectric, General Physics and Astronomy, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 01 natural sciences, Capacitance, law.invention, Quantum capacitance, Capacitor, law, Topological insulator, 0103 physical sciences, Optoelectronics, Field-effect transistor, 010306 general physics, 0210 nano-technology, business
Abstract

A metal-dielectric topological-insulator capacitor device based on hexagonal-boron-nitrate-(h-BN) encapsulated CVD-grown Bi 2 Se 3 is realized and investigated in the radio-frequency regime. The rf quantum capacitance and device resistance are extracted for frequencies as high as 10 GHz and studied as a function of the applied gate voltage. The superior quality h-BN gate dielectric combined with the optimized transport characteristics of CVD-grown Bi 2 Se 3 (n ∼ 10 18 cm −3 in 8 nm) on h-BN allow us to attain a bulk depleted regime by dielectric gating. A quantum-capacitance minimum and a linear variation of the capacitance with the chemical potential are observed revealing a Dirac regime. The topological surface state in proximity to the gate is seen to reach charge neutrality, but the bottom surface state remains charged and capacitively coupled to the top via the insulating bulk. Our work paves the way toward implementation of topological materials in rf devices.

Published
2018
Full Text
View/download PDF

5. Low frequency Raman spectroscopy of few-atomic-layer thick hBN crystals

Author

Bernard Plaçais, Léonard Schué, I. Stenger, Mohamed Boukhicha, Bruno Berini, Julien Barjon, Annick Loiseau, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'étude des microstructures [Châtillon] (LEM - ONERA - CNRS), Centre National de la Recherche Scientifique (CNRS)-ONERA, Laboratoire Pierre Aigrain (LPA), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), ANR-14-CE08-0018,GoBN,Hétérostructures de graphènes blanc et noir(2014), European Project: 696656,H2020,H2020-Adhoc-2014-20,GrapheneCore1(2016), Université Paris Saclay (COmUE)-ONERA-Centre National de la Recherche Scientifique (CNRS), Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), ONERA-Centre National de la Recherche Scientifique (CNRS), École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS-PSL), ONERA-Centre National de la Recherche Scientifique (CNRS)-Université Paris Saclay (COmUE), ONERA - The French Aerospace Lab [Châtillon], and Université Paris Saclay (COmUE)-ONERA

Subjects
Materials science, FOS: Physical sciences, Nanotechnology, 02 engineering and technology, Nitride, 01 natural sciences, law.invention, symbols.namesake, law, 0103 physical sciences, General Materials Science, Thin film, 010306 general physics, Spectroscopy, ComputingMilieux_MISCELLANEOUS, Condensed Matter - Materials Science, Thin layers, Graphene, business.industry, Mechanical Engineering, Materials Science (cond-mat.mtrl-sci), General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Mechanics of Materials, symbols, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, van der Waals force, 0210 nano-technology, business, Raman spectroscopy, Raman scattering
Abstract

Hexagonal boron nitride (hBN) has recently gained a strong interest as a strategic component in engineering van der Waals heterostructures built with two dimensional crystals such as graphene. This work reports micro-Raman measurements on hBN flakes made of a few atomic layers, prepared by mechanical exfoliation. The temperature dependence of the Raman scattering in hBN is investigated first such as to define appropriate measurements conditions suitable for thin layers avoiding undesirable heating induced effects. We further focus on the low frequency Raman mode corresponding to the rigid shearing oscillation between adjacent layers, found to be equal to 52.5 cm-1 in bulk hBN. For hBN sheets with thicknesses below typically 4 nm, the frequency of this mode presents discrete values, which are found to decrease down to 46.0(5) cm-1 for a three-layer hBN, in good agreement with the linear-chain model. This makes Raman spectroscopy a relevant tool to quantitatively determine the number of layers in ultra thin hBN sheets, below 8L.

Published
2017
Full Text
View/download PDF

6. Contact gating at GHz frequency in graphene

Author

Quentin Wilmart, M. Rosticher, N. Garroum, Gwendal Fève, Bernard Plaçais, Jean-Marc Berroir, A. Inhofer, Mohamed Boukhicha, Wei Yang, P. Morfin, Laboratoire Pierre Aigrain (LPA), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique Statistique de l'ENS (LPS), Université Paris Diderot - Paris 7 (UPD7)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS)-Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS), Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS-PSL), and Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Computer science, Transconductance, FOS: Physical sciences, 02 engineering and technology, Gating, Hardware_PERFORMANCEANDRELIABILITY, Bioinformatics, 01 natural sciences, Article, law.invention, symbols.namesake, Charge-carrier density, law, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Electronics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Multidisciplinary, Condensed Matter - Mesoscale and Nanoscale Physics, Graphene, business.industry, Fermi level, Transistor, Electrical engineering, 021001 nanoscience & nanotechnology, Scaling limit, Modulation, symbols, Enhanced Data Rates for GSM Evolution, 0210 nano-technology, business, Communication channel
Abstract

The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions due to access and contact resistances impeding the device performance. We propose a novel design, overcoming these issues by implementing additional local gates underneath the contact region which allow a full control of the Klein barrier taking place at the contact edge. In particular, our work demonstrates the GHz operation of transistors driven by independent contact gates. We benchmark the standard channel and novel contact gating and report for the later dynamical transconductance levels at the state of the art. Our finding may find applications in electronics and optoelectronics whenever there is need to control independently the Fermi level and the electrostatic potential of electronic sources or to get rid of cumbersome local channel gates.

Published
2016
Full Text
View/download PDF

7. Anharmonic phonons in few layer MoS$_2$: Raman spectroscopy of ultra low energy compression and shear modes

Author

Marie-Aude Méasson, Matteo Calandra, Abhay Shukla, Mohamed Boukhicha, Ophelie Lancry, Institut de minéralogie et de physique des milieux condensés (IMPMC), Université Pierre et Marie Curie - Paris 6 (UPMC)-IPG PARIS-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux et Phénomènes Quantiques (MPQ (UMR_7162)), Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), HORIBA France SAS [Villeneuve d'Ascq], HORIBA Scientific [France], Labex Matisse, ANR-11-IDEX-0004,SUPER,MATerials, InterfaceS, Surfaces, Environment(2011), ANR-11-IDEX-0004-02/10-LABX-0067,MATISSE,MATerials, InterfaceS, Surfaces, Environment(2011), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Institut de Physique du Globe de Paris (IPG Paris)-Centre National de la Recherche Scientifique (CNRS), and ANR-11-IDEX-0004,SUPER,Sorbonne Universités à Paris pour l'Enseignement et la Recherche(2011)

Subjects
GRAPHENE, Nanostructure, Materials science, Phonon, FOS: Physical sciences, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, symbols.namesake, chemistry.chemical_compound, Condensed Matter::Materials Science, Optics, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], PACS : 63 . 20 . dk, 63 . 20 . Ry, 63 . 22 . − m, Molybdenum disulfide, Condensed Matter - Materials Science, Condensed matter physics, Scattering, business.industry, Anharmonicity, Materials Science (cond-mat.mtrl-sci), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Coupling (probability), 0104 chemical sciences, Electronic, Optical and Magnetic Materials, chemistry, TRANSISTORS, symbols, 0210 nano-technology, business, Raman spectroscopy, Energy (signal processing)
Abstract

Molybdenum disulfide (MoS$_2$) is a promising material for making two-dimensional crystals and flexible electronic and optoelectronic devices at the nanoscale. MoS$_2$ flakes can show high mobilities and have even been integrated in nanocircuits . A fundamental requirement for such use is efficient thermal transport. Electronic transport generates heat which needs to be evacuated, more crucially so in nanostructures. Anharmonic phonon-phonon scattering is the dominant intrinsic limitation to thermal transport in insulators. Here, using appropriate samples, ultra-low energy Raman spectroscopy and first principles calculations, we provide a full experimental and theoretical description of compression and shear modes of few-layer (FL) MoS$_2$. We demonstrate that the compression modes are strongly anharmonic with a marked enhancement of phonon-phonon scattering as the number of layers is reduced, most likely a general feature of nanolayered materials with weak interlayer coupling., 6 pages, 5 figures

Published
2013
Full Text
View/download PDF

8. Anodic bonded graphene

Author

Jean-Claude Bouillard, Olivier Beyssac, Jean-Marie Poumirol, R. Kumar, Dario Taverna, Walter Escoffier, Roger Gohler, Abhay Shukla, William Sacks, Mohamed Boukhicha, Emanuelle Lacaze, Massimiliano Marangolo, Adrian Balan, Université Pierre et Marie Curie - Paris 6 (UPMC), Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), de Lourmel, Université Fédérale Toulouse Midi-Pyrénées, and Université de Toulouse (UT)

Subjects
Materials science, Acoustics and Ultrasonics, Graphene, Graphene foam, Nanotechnology, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, law.invention, symbols.namesake, law, Anodic bonding, 0103 physical sciences, Physical Sciences, symbols, Graphite, 010306 general physics, 0210 nano-technology, Raman spectroscopy, Graphene nanoribbons, Graphene oxide paper
Abstract

International audience; We show how to prepare graphene samples on a glass substrate with the anodic bonding method. In this method, a graphite precursor in flake form is bonded to a glass substrate with the help of an electrostatic field and then cleaved off to leave few layer graphene on the substrate. Now that several methods are available for producing graphene, the relevance of our method is in its simplicity and practicality for producing graphene samples of about 100 µm lateral dimensions. This method is also extensible to other layered materials. We discuss some detailed aspects of the fabrication and results from Raman spectroscopy, local probe microscopy, and transport measurements on these samples.

Published
2010
Full Text
View/download PDF

9. High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation

Author

Takashi Taniguchi, Bernard Plaçais, Emmanuel Baudin, Quentin Wilmart, Mohamed Boukhicha, Vincent Bouchiat, Emiliano Pallecchi, Kenji Watanabe, Erwann Bocquillon, Gwendal Fève, José Palomo, Holger Graef, M. Rosticher, Jean-Marc Berroir, David Mele, Laboratoire de physique de l'ENS - ENS Paris (LPENS), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité)-Département de Physique de l'ENS-PSL, École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL), Physique Mésoscopique, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité)-Département de Physique de l'ENS-PSL, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), National Institute for Materials Science (NIMS), Systèmes hybrides de basse dimensionnalité (NEEL - HYBRID), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Nano-Optique, Carbon - IEMN (CARBON - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), The research leading to these results have received partial funding from the European UnionHorizon 2020 research and innovation programme under grant No. 785219 'Graphene Core 2', and fromthe ANR-14-CE08-018-05 'GoBN'. The work of Q.W. was supported by a DGA-MRIS scholarship, ANR-14-CE08-0018,GoBN,Hétérostructures de graphènes blanc et noir(2014), European Project: 785219,H2020,GrapheneCore2(2018), Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP)-Sorbonne Université (SU)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP)-Sorbonne Université (SU)-École normale supérieure - Paris (ENS Paris), Systèmes hybrides de basse dimensionnalité (HYBRID), Carbon-IEMN (CARBON-IEMN), Laboratoire de physique de l'ENS - ENS Paris (LPENS (UMR_8023)), École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP), and Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP)-École normale supérieure - Paris (ENS Paris)

Subjects
Materials science, Terahertz radiation, Physics::Optics, 02 engineering and technology, Substrate (electronics), lcsh:Technology, 7. Clean energy, 01 natural sciences, law.invention, lcsh:Chemistry, Graphene transistor, [SPI]Engineering Sciences [physics], Dirac pinch-off, law, 0103 physical sciences, contact gating, General Materials Science, 010306 general physics, lcsh:QH301-705.5, Instrumentation, Fluid Flow and Transfer Processes, [PHYS]Physics [physics], lcsh:T, Scattering, business.industry, Graphene, Oscillation, Process Chemistry and Technology, Velocity saturation, Transistor, General Engineering, 021001 nanoscience & nanotechnology, velocity saturation, lcsh:QC1-999, Computer Science Applications, high-frequency, lcsh:Biology (General), lcsh:QD1-999, lcsh:TA1-2040, Optoelectronics, Field-effect transistor, lcsh:Engineering (General). Civil engineering (General), 0210 nano-technology, business, lcsh:Physics
Abstract

The current understanding of physical principles governing electronic transport in graphene field effect transistors (GFETs) has reached a level where we can model quite accurately device operation and predict intrinsic frequency limits of performance. In this work, we use this knowledge to analyze DC and RF transport properties of bottom-gated graphene on boron nitride field effect transistors exhibiting pronounced velocity saturation by substrate hyperbolic phonon polariton scattering, including Dirac pinch-off effect. We predict and demonstrate a maximum oscillation frequency exceeding 20 &nbsp, GHz . We discuss the intrinsic 0.1 &nbsp, THz limit of GFETs and envision plasma resonance transistors as an alternative for sub-THz narrow-band detection.

Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results