Search

Researchers have suggested that case library learning is an effective instructional method that promotes argumentation skills for ill-structured problem-solving. However, little research has examined scaffolding strategies to implement effective case library learning. The aim of this research was to examine the effects of indexing prompts as scaffolds on argumentation skills during problem-solving in case library learning. A quasi-experimental design was employed for the research. A total of 111 first-year students in a university across three sections in a career development course participated in the experiment. Participants were provided with three different indexing prompts: explanation-based indexing prompts (focused on self-explaining anomalies of individual cases), difference-based indexing prompts (focused on self-explaining similarities and differences between cases), and no prompts (allowing spontaneous self-explanations when studying cases). Learners' argumentation essays comprising initial arguments, counterarguments, and rebuttals were collected. The results found that learners who were prompted to generate mental indices outperformed the learners in the control group when constructing argumentation. More specifically, explanation-based indices were beneficial in making counterarguments and rebuttals, and difference-based indices were helpful when making rebuttals. These findings suggest that indexing cases based on both exploration of the anomalies of each case and comparisons between cases improves argumentation by facilitating case retention, retrieval, and reuse.

Purpose: The purpose of this study is to develop a reliable and valid measurement of employee learning agility for use in human resources development. Design/methodology/approach: This paper analyzed a total of 365 cases collected from Korean organizations. This paper conducted exploratory factor analysis, confirmatory factor analysis and Rasch analysis to validate the measurement. This paper conducted a measurement invariance (MI) test to confirm the generalizability of the measurement and used Harman's single factor test to assess the common method variance (CMV). Findings: This paper derived a learning agility measurement with six subfactors (Cronbach's [alpha] = 0.893). This paper verified that it could be applied equally to supervisors and subordinates using an MI test. Factor analysis confirmed the feasibility of CMV. Based on I-ADAPT theory, the learning agility measurement can be applied to assess not only leader competency but also general employee competency. Research limitations/implications: Practitioners may use this model of learning agility for developing competency-based training programs and evaluations. This study is meaningful because it extends the concept of learning agility. In particular, the MI test indicated that there are no differences between supervisors and employees regarding the utility of the concept. Originality/value: This study is meaningful because it extends the concept of learning agility. In particular, the MI test indicated that there are no differences between supervisors and employees regarding the utility of the concept. The concept in this paper is distinguished from other studies by applying the Rasch model from an item response theory perspective.

The spectral response characteristics and carrier impact ionization coefficients of Si(sub 1 - x)Ge(sub x) photodiodes grown by MBE are determined. The ratio of electron and hole impact ionization coefficients is computed and is shown to agree well with published data from Si and Ge. The ratio attains unity at x = 0.45 representing a cross-over in the alloy system. Detailed measurement results having important photodetection applications are presented.

Hot-carrier reliability in silicon-on-insulator (SOI) devices can be significantly improved by incorporation of deuterium at the oxide/silicon interfaces is demonstrated. The role of vibrational heating mechanism is seen to be important in interface degradation of deep submicron silicon-on-insulator (SOI) devices.

A number of new phenomena are reported comparing with ac stress with the dec stress. In the initial stress period, the deuterium isotope effect is smaller for ac stress than for dc stress.

Research has revealed a strong isotope effect for degradation and transistor aging. It will be shown that these studies do, in fact, suggest that it is the channel hot electrons which cause most of the Si-SiO2 interface degradation related to positive threshold voltage shifts in n-metal oxide semiconductor field effect transistors. The emission of charge carriers into the oxide is not required to explain all the positive voltage shifts related to interface charge.

The influence of deuterium sintering on improving the reliability of complementary metal oxide semiconductor transistors with nitride sidewall spacers is studied. Comparison of electrical measurements and SIMS depth profiles suggest that the lifetime improvement of wafers with deuterium sintering at the Metal-1 and Metal-4 steps is directly related to the amount of deuterium present at the oxide/silicon interface.

Memory devices with bilayer CeO2−x/ZnO and ZnO/CeO2−x heterostructures sandwiched between Ti top and Pt bottom electrodes were fabricated by RF-magnetron sputtering at room temperature. N-type semiconductor materials were used in both device heterostructures, but interestingly, change in heterostructure and electroforming polarity caused significant variations in resistive switching (RS) properties. Results have revealed that the electroforming polarity has great influence on both CeO2−x/ZnO and ZnO/CeO2−x heterostructure performance such as electroforming voltage, good switching cycle-to-cycle endurance (~ 102), and ON/OFF ratio. A device with CeO2−x/ZnO heterostructure reveals good RS performance due to the formation of Schottky barrier at top and bottom interfaces. Dominant conduction mechanism of high resistance state (HRS) was Schottky emission in high field region. Nature of the temperature dependence of low resistance state and HRS confirmed that RS is caused by the formation and rupture of conductive filaments composed of oxygen vacancies. [ABSTRACT FROM AUTHOR]

In this study the isolation and characterization of three bacteriophages (ST4, L13, and SG3) infecting Salmonella gallinarum were carried out. They were further tested for their in vivo efficacy in phage therapy. All three phages belong to the Siphoviridae family with isometric heads and non-contractile tails. They have a broad host range among serovars of Salmonella enterica. The burst sizes were observed to be 1670, 80, and 28 for ST4, L13, and SG3, respectively. The in vivo efficacy of the phages was tested in chickens. Layer chickens were challenged with S. gallinarum, whereas contact chickens were cohabited without direct challenge. Each bacteriophage was orally inoculated in the form of feed additives. Mortality was observed and S. gallinarum was periodically re-isolated from the livers, spleens, and cecums of the chickens. Bacterial re-isolation from the organs and mortality decreased significantly in both challenged and contact chickens treated with the bacteriophages compared with untreated chickens serving as the control. The three bacteriophages may be effective alternatives to antibiotics for the control of fowl typhoid disease in chickens.