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An adverse prognostic impact of statin use in lymphoma was first suspected from in vitro data showing an impairment of anti-CD20 antibody binding. However, further clinical studies suggested an improved outcome associated with their use in hematological malignancies. In particular, a survival benefit was reported for patients with follicular lymphoma on statins. Our objective was to assess the outcome of follicular lymphoma patients treated in the PRIMA study with immunochemotherapy according to the use of statins. Among the 1,217 patients enrolled in the PRIMA study, 1,135 were included in the present study. Concomitant treatments at registration were available for all patients. Among those 1,135 patients, 119 were on statins (10.5%) at diagnosis. Adverse events frequencies, event-free survival (EFS), time to next lymphoma treatment (TTNLT), time to next chemotherapy (TTNCT), and overall survival (OS) were evaluated according to the use of statins. The rates of overall and specific cardiovascular adverse events between the two groups of patients were comparable both during induction and maintenance. Outcome in terms of response rates or EFS, TTNLT, TTNCT, and OS were similar regardless of the use of statins (P = 0.57, P = 0.85, P = 0.30, and P = 0.43, respectively) in univariate analysis and after further adjustments for potential confounding factors in multivariate analysis. In conclusion, statin use does not impact the prognosis of patients with follicular lymphoma treated with immunochemotherapy.

Efforts were continued on the development of thin-film tunnel cathodes for microwave tubes. Equipment modifications and improvements made are described in detail. Two vacuum deposition systems are now in operation. One system is designed specifically for CdS work, and the other system for other insulating barrier materials. Both systems have quartz crystal film-thickness monitors in operational use. In both systems, the complete three-layer cathode structure can be fabricated completely in vacuum. In the case of the CdS system, the cathodes have to be tested in another vacuum system at the present time. In the other system, however, the cathodes fabricated in vacuo can then be tested without exposure to atmosphere. The structures Au-SiO Au, Mo-SiO-Mo, and Mo-CdS-Mo were studied. The Mo-SiO-Mo structure is the most promising cathode so far tested. It shows potential for high efficiency and long life. The calculations of the relaxation frequency of hot electrons and holes in metals and semiconductors was completed. The calculations for hot holes in metals are presented. Numerical results were calculated and presented.

Further data have been obtained and analyzed on the Ge/GaP heterojunctions fabricated by the GeCl4 decomposition process. In particular, the effects of postdeposition heat treatment have been studied. It appears that heat treatment anneals imperfections caused by lattice mismatch, resulting in a reduced barrier between the conduction band of the Ge and that of the GaP. Further data have been obtained on the GaP/Pd surface-barrier diodes. The current-voltage characteristics of the diodes do not fit simple Schottky theory. The results of heat treatment indicate a barrier reduction similar to that observed with the Ge/GaP diodes. The effects of depositing BaO on a heated substrate were studied. A work function of 1.22 eV was obtained on Pd by keeping the substrate at about 600 C during the BaO evaporation. Very efficient photoemission from Ni/BaO was observed at elevated temperatures. Also, infrared emission extending out to as far as 2 microns. Heavily doped p micron type GaAs crystals were cleaved in an evaporant stream of BaO molecules. A minimum photothreshold of about 1.6 eV was obtained. Alternate approaches to high-quantum-efficiency photoemission in the visible and near-IR regions are suggested. (Author)