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1. Reduction of RIE-damage by N...O-anneal of thermal gate oxide.

Author

Joshi, Aniruddha B., Mann, Richard A., Lee Chung, T. H. Cho, B. W. Min, and D. L. Kwong

Subjects
METAL oxide semiconductors, ANNEALING of metals
Abstract

Presents a study which examined RIE-induced damage in various MOS devices including those with thermal oxide. Steps taken to improve protection against RIE-induced damage; Demonstration of a nitrogen oxide annealing process for greater protection of the devices.

Published
1998
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