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Reduction of RIE-damage by N...O-anneal of thermal gate oxide.
- Source :
- IEEE Transactions on Semiconductor Manufacturing; Aug98, Vol. 11 Issue 3, p495, 6p, 2 Black and White Photographs, 1 Chart, 10 Graphs
- Publication Year :
- 1998
-
Abstract
- Presents a study which examined RIE-induced damage in various MOS devices including those with thermal oxide. Steps taken to improve protection against RIE-induced damage; Demonstration of a nitrogen oxide annealing process for greater protection of the devices.
- Subjects :
- METAL oxide semiconductors
ANNEALING of metals
Subjects
Details
- Language :
- English
- ISSN :
- 08946507
- Volume :
- 11
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Semiconductor Manufacturing
- Publication Type :
- Academic Journal
- Accession number :
- 962864
- Full Text :
- https://doi.org/10.1109/66.705384