Search

Carbon nanotubes (CNT) are valuable for their application in nanotechnology, electrical properties and high surface area, and in our particular case, for the manufacture of nanosensors. In this work the technique of Plasma Enhanced Chemical Vapor Deposition (PECVD) was used for the manufacture of CNT. The process was conducted in a horizontal tube reactor using methane as precursor gas and an R.F. discharge of 1000w output power acting as ionizing medium. Having achieved the synthesis of CNT on copper (Cu) substrates, heated with an internal electrical resistance to a process temperature of 900°C, the substrates were coated with ferric nitrate Fe(NO 3 ) 3 , which served as a catalyst and nucleation center. The heating system used differs from traditional methods by its internal heating. Growth of CNT was achieved on vertical walls on Cu substrates and perpendicular to it; a prerequisite for the manufacture of nanosensors, which is the main objective of this work, as well as to reduce as much as possible the diameter of the CNT, being its main features 5 μm average length and 7 nm average diameter.

This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture.