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At present, amorphous indium–gallium–zinc oxide (IGZO) semiconductor has become the most commonly used semiconductor material and is widely used in flat panel displays and various sensors, but its performance is greatly affected by environmental factors, especially water. This study investigates the instability of IGZO thin‐film transistors (TFTs) soaked in deionized water. After 24 h bathing, the field‐effect mobility and threshold voltage change a little, but the subthreshold swing, positive bias stress and negative bias stress stability undergo clear degradation. Through comprehensive examination of the changes in the chemical composition, surface morphology and thickness of the IGZO films, it's found that IGZO experiences selective etching by deionized water, and consequently the film surface becomes rough and rich of In and oxygen vacancies, which can explain the variations on device performance well. In addition to the bathing experiment performed on In2O3, Ga2O3, and ZnO TFTs, a schematic image of the reaction between water and IGZO is depicted, showing the preferential loss of Ga and Zn located next to the oxygen vacancy. [ABSTRACT FROM AUTHOR]

The multi-component glass system has a composition of 10K2O–10ZnO–55 B2O3–(25–x)V2O5–xBi2O3 (x = 4, 5, 7.5, 9, 10 mol%) are synthesized by the melt-quenching method. Using X-ray diffraction examination, the amorphous phase in the material was confirmed. The physical characteristics of the produced compositions are examined using density (D) and molar volume (Vm). Calculations of physical properties showed that adding Bi2O3 from 4 to 10 mol% increased the glass density from 2.7878 to 3.3617 g cm−3 and decreased the molar volume from 40.4196 to 38.5895 cm3/mol. Studies of glass samples using the FTIR show bands of absorption for oxides in different structural groups. Octahedral [ BiO 6 ], [ BO 4 ], and tetrahedral [ BO 3 ] structural units are observed in the present glass matrices. The cutoff wavelength ( λ C ), and optical band gap energy were determined using UV absorption spectra. The increase in non-bridging oxygens can be linked to the decrease in optical band gap energy ( E opt ) (direct and indirect) and the increase in cutoff wavelength with an increase in Bi2O3 content. This is attributed to the existence of bismuth ions and the creation of non-bridging oxygens. Besides that, the values of optical parameters, viz., optical electronegativity, refractive index, and molar refractivity, are calculated. The metallization criterion values are less than 1 and the glass samples exhibit an increased tendency towards metallization. Both the conductivity and the dielectric constant increase with the rise in Bi2O3 content, however, the dielectric loss and the impedance reduce. The behavior and values of conductivity for the studied glasses reveal the semiconducting properties of all glass samples. These results suggest that the produced glass samples may be employed as amorphous semiconductors in electronics and memory switching devices. [ABSTRACT FROM AUTHOR]

Glassy hybrid metal halides have emerged as promising materials in recent years due to their high structural adjustability and low melting points, offering unique merits that overcome the limitations of their crystalline and polycrystalline counterparts as well as other conventional amorphous semiconductors. This review article comprehensively explores the structural characteristics, electronic properties, and chemical coordination of hybrid metal halides, emphasizing their role in the glass transition from the crystalline phase to the amorphous phase. We examine the intrinsic disorder within the amorphous phase that facilitates light transmission and discuss recent advances in device architecture and interface engineering by optimizing the charge transport of glassy hybrid metal halides for high-quality applications. With full theoretical understanding and rational structural design, potential applications in displays, information storage, X-ray imaging, and sensing are highlighted, underscoring the transformative impact of glassy hybrid metal halides in the fields of materials science and information science. [ABSTRACT FROM AUTHOR]

The amorphous In─Ga─Zn─O (a‐IGZO) thin film transistors (TFTs) have attracted attention as a cell transistor for the next generation DRAM architecture because of its low leakage current, high mobility, and the back‐end‐of‐line (BEOL) compatibility that enables monolithic 3D (M3D) integration. IGZO‐based electronic devices used in harsh environments such as radiation exposure can be vulnerable, resulting in functional failure. Here, the behavior of subgap density‐of‐states (DOS) over full subgap range according to the impactful gamma‐ray irradiation in a‐IGZO TFTs is investigated by employing DC current–voltage (I−V) data with multiple‐wavelength light sources. To understand the origins of the radiation effect, IGZO films have been also analyzed by x‐ray photoelectron spectroscopy (XPS). Considering in‐depth electrical and chemical analysis, the unexpected increase of subthreshold leakage current caused by total ionizing dose (TID) is strongly correlated with newly discovered deep‐donor states (gDDγ(E)$g_{DD}^\gamma (E)$) at the specific energy level. In particular, oxygen vacancies caused by the gamma‐ray irradiation give rise to undesirable electrical characteristics such as hysteresis effect and negative shift of threshold voltage (VT). Furthermore, the TCAD simulation results based on DOS model parameters are found to exhibit good agreement with experimental data and plausible explanation including (gDDγ(E)$g_{DD}^\gamma (E)$). [ABSTRACT FROM AUTHOR]

In this study, we used Raman spectroscopy to compare the local structure of Ge2Sb2Te5 (GST) thin films with thicknesses of 90 nm and 271 nm that were crystallized through thermal annealing and laser radiation (laser annealing) during the recording of Raman spectra in situ. We found that for all crystallized films, the position of the main peaks in the Raman spectra was almost the same, and their structure corresponded to a hexagonal close packed state. It is noteworthy that the full width at half maximum (FWHM) of the main peaks varies considerably depending on the crystallization method used. [ABSTRACT FROM AUTHOR]

Amorphous indium gallium zinc oxide (a-IGZO) is becoming an increasingly important technological material. Transport in this material is conceptualized as the heavy disorder of the material causing a conduction or mobility band-edge that randomly varies and undulates in space across the entire system. Thus, transport is envisioned as being dominated by percolation physics as carriers traverse this varying band-edge landscape of "hills" and "valleys". It is then something of a missed opportunity to model such a system using only a compact approach—despite this being the primary focus of the existing literature—as such a system can easily be faithfully reproduced as a true microscopic TCAD model with a real physically varying potential. Thus, in this work, we develop such a "microscopic" TCAD model of a-IGZO and detail a number of key aspects of its implementation. We then demonstrate that it can accurately reproduce experimental results and consider the issue of the addition of non-conducting band-tail states in a numerically efficient manner. Finally, two short studies of 3D effects are undertaken to illustrate the utility of the model: specifically, the cases of variation effects as a function of device size and as a function of surface roughness scattering. [ABSTRACT FROM AUTHOR]

Polymer-derived SiBCN ceramics with good high-temperature stability and temperature-sensitive properties can be used in real-time temperature monitoring in the aeronautical industry. However, previous investigations mostly focus on the temperature sensitivity of SiBCN ceramics but neglect the fast temperature conversion of the real operating environment and its effect on the temperature sensitivity, which hinders their further practical application. In this study, the response to rapid temperature changes of polymer-derived SiBCN was studied. SiBCN ceramics maintain excellent high-temperature semiconductor performance under rapid heating, and its direct-current (DC) conductivity increases with increasing temperature. The conductive mechanism conforms to the amorphous semiconductor formula, following three different transition mechanisms in different temperature regions. The resistance of SiBCN increases with the number of cycles during 100 cycles of 500–1200 °C, presenting excellent temperature-sensitivity and relatively good sensing stability. This work demonstrates that SiBCN ceramics can maintain excellent temperature-resistance under extreme environments with rapid heating and cooling, and it is hoped that this work could guide the development of temperature sensors for extreme environments in the future. [Display omitted] [ABSTRACT FROM AUTHOR]

The electron conduction mechanism in indium oxide (In2O3) and its implications for amorphous transport have been investigated from an orbital overlap perspective. Combined density functional theory and empirical tight binding modeling reveal that the electron transport is facilitated by the neighboring metal atomic s orbital overlap "without" oxygen's p-orbital involvement. In other words, the electron transport pathway in oxides is only due to the metal-metal medium range connection. This electron conduction mechanism is extended to amorphous In2O3 which unveils that the amorphous disorder influences the electron transport through impacting the metal-metal medium range order including metal-metal coordination number and metal-metal separation. Our results provide an insight into the current theoretical understanding of electron transport in amorphous oxide semiconductors. [ABSTRACT FROM AUTHOR]

Amorphous semiconductors without perfect crystalline lattice structures are usually considered to be unfavorable for photocatalysis due to the presence of enriched trap states and defects. Here we demonstrate that breaking long-range atomic order in an amorphous ZnCdS photocatalyst can induce dipole moments and generate strong electric fields within the particles which facilitates charge separation and transfer. Loading 1 wt.% of low-cost Co-MoSx cocatalysts to the ZnCdS material increases the H2 evolution rate to 70.13 mmol g−1 h−1, which is over 5 times higher than its crystalline counterpart and is stable over the long-term up to 160 h. A flexible 20 cm × 20 cm Co-MoSx/ZnCdS film is prepared by a facile blade-coating technique and can generate numerous observable H2 bubbles under natural sunlight, exhibiting potential for scale-up solar H2 production. The rapid recombination of photogenerated charge carriers is a key challenge for photocatalytic hydrogen production. Here, the authors report an amorphous ZnCdS to break the symmetry of atom arrangement that induces strong dipole fields, thus providing extra driving forces for charge separation. [ABSTRACT FROM AUTHOR]

The presence of low‐frequency noise (LFN) in amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) is of utmost concern, prompting extensive investigations into the analysis of LFN. However, prior research endeavors have tended to overlook the significance of the sub‐gap density of states (DOS) in the LFN analysis, resulting in an incomplete comprehension. To bridge this knowledge gap, the influence of sub‐gap DOS is demonstrated on LFN in Si‐doped ZnSnO (SZTO) thin‐film transistors (TFTs) under various conditions. The SZTO TFTs is intentionally subjected to positive bias stress and hot carrier stress in order to control the sub‐gap DOS and investigate how this change affects the LFN characteristics. It is revealed that the non‐uniform energetic distribution of sub‐gap DOS induces bias‐dependent excess noise in the SZTO TFTs. Additionally, self‐recovery behavior after the HCS is observed, accompanied by a commensurate reduction in 1/f noise. These empirical observations provide evidence that the conventional correlated mobility fluctuation model used to explain LFN in AOS TFTs is insufficient and underscores the critical importance of considering subgap DOS when analyzing LFN of AOS TFTs. [ABSTRACT FROM AUTHOR]

Amorphous photonic structures are mesoscopic optical structures described by electrical permittivity distributions with underlying spatial randomness. They offer a unique platform for studying a broad set of electromagnetic phenomena, including transverse Anderson localization, enhanced wave transport, and suppressed diffusion in random media. Despite this, at a more practical level, there is insufficient work on both understanding the nature of optical transport and the conditions conducive to vector-wave localization in these planar structures, as well as their potential applications to photonic nanodevices. In this study, we fill this gap by investigating experimentally and theoretically the characteristics of optical transport in a class of amorphous photonic structures and by demonstrating their use to some basic waveguiding nanostructures. We demonstrate that these 2-D structures have unique isotropic and asymmetric band gaps for in-plane propagation, controlled from first principles by varying the scattering strength and whose properties are elucidated by establishing an analogy between photon and carrier transport in amorphous semiconductors. We further observe Urbach band tails in these random structures and uncover their relation to frequency- and disorder-dependent Anderson-like localized modes through the modified Ioffe-Regel criterion and their mean free path - localization length character. Finally, we illustrate that our amorphous structures can serve as a versatile platform in which photonic devices such as disorder-localized waveguides can be readily implemented. Editors Summary: Amorphous photonic structures offer a unique platform for studying unique optical transport phenomena in random media. The authors examine both experimentally and theoretically TE (in-plane) polarized near-infrared light in amorphous structures, demonstrating isotropic and asymmetric bandgaps, Anderson-like localized states at the midgap, and readily available practical waveguide structures. [ABSTRACT FROM AUTHOR]

We report on investigating the structural and electronic properties of semiconducting and insulating layers produced in a process resembling percolation in a unique cold plasma fabrication method (plasma-enhanced chemical vapor deposition—PECVD). Amorphous carbon–tin films (Sn–C) produced from tetramethyl tin (TMT) with an acoustic-frequency glow discharge in a three-electrode reactor were investigated. The layers, after air exposure, oxidized to SnO2/Sn–C. Depending on the coupling capacitance applied to the plasma reactor, the films could be obtained in the form of an amorphous semiconductor or an amorphous insulator. We assume that the semiconductor consists of an internal network of channels auto-organized during deposition. The insulator does not demonstrate any internal structure features. An investigation on conductive filaments creating low-dimensional (LD) nanojunctions in the semiconductor and the location of energetic levels in the insulator was performed. The main parameters of the electronic band structure of the insulating film, such as the transport gap EG (5.2 eV), optical gap Eopt (3.1 eV), electron affinity Χ (2.1 eV), and ionization potential J (7.3 eV), were determined. We have demonstrated a simple approach for developing a catalyst candidate consisting of amorphous semiconductor–insulator nanojunctions for (photo)catalytic hydrogen evolution or CO2 reduction. [ABSTRACT FROM AUTHOR]

Amorphous In–Ga–Sn–O (IGTO), as an n-type amorphous oxide semiconductor, has attracted interest owing to its potential applications to the vertical NAND or 3D DRAM channels as well as in high-mobility thin-film transistors (TFTs) for high-resolution displays. In this study, ternary Ga–Sn–O (GTO) and quaternary IGTO films were deposited through plasma-enhanced atomic layer deposition (PEALD) at 200 °C, using dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium, trimethylgallium, and bis(1-dimethylamino-2-methyl-2-propoxide)tin as the In, Ga, and Sn precursors, respectively. First, GTO films were fabricated through PEALD with varying Ga2O3:SnO2 subcycle ratios. The remarkable evolutions of the microstructure and electrical properties of the PEALD GTO films were observed depending on the Ga/Sn cationic ratio. Subsequently, the growth characteristics of the quaternary PEALD IGTO films were examined by introducing In2O3 subcycles, and the In:Ga:Sn cationic composition was precisely engineered by varying the ratios of In2O3, SnO2, and Ga2O3 subcycles in the IGTO deposition process. Composition-controlled IGTO bottom gate staggered-type TFTs were fabricated, and their electrical performance was evaluated depending on the In:Ga:Sn cationic composition of the IGTO channel layer. The optimized TFT with the In0.38Ga0.32Sn0.30Ox film exhibited a high field-effect mobility of 22.5 cm2/V s, turn-on voltage of −4.4 V, and subthreshold swing of 0.26 V/dec. [ABSTRACT FROM AUTHOR]

Amorphous indium gallium zinc oxide (a-IGZO) is becoming an increasingly important technological material. Transport in this material is conceptualized as the heavy disorder of the material causing a conduction or mobility band-edge that randomly varies and undulates in space across the entire system. Thus, transport is envisioned as being dominated by percolation physics as carriers traverse this varying band-edge landscape of “hills” and “valleys”. It is then something of a missed opportunity to model such a system using only a compact approach—despite this being the primary focus of the existing literature—as such a system can easily be faithfully reproduced as a true microscopic TCAD model with a real physically varying potential. Thus, in this work, we develop such a “microscopic” TCAD model of a-IGZO and detail a number of key aspects of its implementation. We then demonstrate that it can accurately reproduce experimental results and consider the issue of the addition of non-conducting band-tail states in a numerically efficient manner. Finally, two short studies of 3D effects are undertaken to illustrate the utility of the model: specifically, the cases of variation effects as a function of device size and as a function of surface roughness scattering.

The region of fundamental absorption in the optical spectra of amorphous semiconductors is theoretically studied using the Davis-Mott approximation according to the Kubo-Greenwood formula. As is known, three types of optical transitions of the electron can be observed in the fundamental absorption region; from the tail of the valence band to the conduction band, from the valence band to the conduction band and from the valence band to the tail of the conduction band. For all these electronic transitions, analytical expressions of the partial absorption spectra are obtained from two different types of the Kubo-Greenwood formula. The width of the optical mobility gap and the proportionality coefficient were determined in the analytical form of the interband absorption spectrum by fitting them to the experimental interband absorption spectrum. A new method is presented for calculating the density of distribution of electronic states in the conduction band of amorphous carbon based on the experimental interband absorption spectrum and the analytical expression of the Kubo-Greenwood formula written for the interband absorption spectrum.

In this work, defect absorption spectra for defects characteristic of hydrogenated amorphous silicon are theoretically studied. It is shown that in order to determine defect absorption spectra using the Kubo-Greenwood formula, the indefinite integral in this formula must be written in a certain form. It was discovered that electronic transitions involving defect states are divided into two parts depending on the energy of absorbed photons. The values of the partial defect absorption spectrum at low energies of absorbed photons have almost no effect on the overall defect absorption spectrum. It has been established that the main role in determining the defect absorption spectrum is played by partial spectra determined by optical transitions of electrons between allowed bands and defects. It is shown that with a power-law distribution of the density of electronic states in allowed bands, the spectra of optical transitions between them and defects do not depend on the value of this power.

Growing high-quality core-shell heterostructure nanowires is still challenging due to the lattice mismatch issue at the radial interface. Herein, a versatile strategy is exploited for the lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires by simply utilizing the surfactant and amorphous natures of chalcogenide semiconductors. Specifically, a variety of III-V/chalcogenide core-shell heterostructure nanowires are successfully constructed with controlled shell thicknesses, compositions, and smooth surfaces. Due to the conformal properties of obtained heterostructure nanowires, the wavelength-dependent bi-directional photoresponse and visible light-assisted infrared photodetection are realized in the type-I GaSb/GeS core-shell heterostructure nanowires. Also, the enhanced infrared photodetection is found in the type-II InGaAs/GeS core-shell heterostructure nanowires compared with the pristine InGaAs nanowires, in which both responsivity and detectivity are improved by more than 2 orders of magnitude. Evidently, this work paves the way for the lattice-mismatch-free construction of core-shell heterostructure nanowires by chemical vapor deposition for next-generation high-performance nanowire optoelectronics. A versatility growth strategy is developed for the lattice-mismatch-free construction of core-shell heterostructure NWs by adopting the promising III-V semiconductors and amorphous chalcogenide semiconductors using simple chemical vapor deposition. [ABSTRACT FROM AUTHOR]

As the Internet of things (IOT) industry continues to grow with an ever‐increasing number of connected devices, the need for processing large amounts of data in a fast and energy‐efficient way becomes an even more pressing issue. Alternative computation devices such as resistive random access memories (RRAM), or memristors, started taking centre stage as prime candidates to tackle this issue due to their in‐memory computation capabilities. Amorphous oxide semiconductors (AOSs), more specifically eco‐friendly zinc‐tin oxide (ZTO), show great promise as a memristive active material for flexible and sustainable applications due to its low required fabrication temperature, amorphous structure, low‐cost, and critical‐raw‐material‐free composition. In this perspective article, the research progress on ZTO‐based memristors is reviewed in terms of device structure and material compositions. The effects on the electrical performance of the devices are studied. Additionally, neuromorphic and optoelectronic capabilities are analyzed with the objective of finding the best approaches toward implementing these devices in novel computing paradigms. [ABSTRACT FROM AUTHOR]

In order to suppress the crosstalk and provide a high on-current to melt the incorporated phase change materials in the PCRAM array and 3D stacking chips, the authors [[8]] investigated the influence of Si concentration on the electrical properties of the Si-Te ovonic threshold selector. 36986003 3 Wang K., He Q., Yang D., Pi X. Highly Efficient Energy Transfer from Silicon to Erbium in Erbium-Hyperdoped Silicon Quantum Dots. 10.3390/nano13010121 2 Sun T., Li D., Chen J., Wang Y., Han J., Zhu T., Li W., Xu J., Chen K. Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode. [Extracted from the article]

High-performance oxide transistors have recently attracted significant attention for use in various electronic applications, such as displays, sensors, and back-end-of-line transistors. In this study, we demonstrate atomically thin indium–oxide (InOx) semiconductors using a solution process for high-performance thin-film transistors (TFTs). To achieve superior field-effect mobility and switching characteristics in TFTs, the bandgap and thickness of the InOx were tuned by controlling the InOx solution molarity. As a result, a high field-effect mobility and on/off-current ratio of 13.95 cm2 V−1 s−1 and 1.42 × 1010, respectively, were achieved using 3.12-nanometer-thick InOx. Our results showed that the charge transport of optimized InOx with a thickness of 3.12 nm is dominated by percolation conduction due to its low surface roughness and appropriate carrier concentration. Furthermore, the atomically thin InOx TFTs showed superior positive and negative gate bias stress stabilities, which are important in electronic applications. The proposed oxide TFTs could provide an effective means of the fabrication of scalable, high-throughput, and high-performance transistors for next-generation electronic applications. [ABSTRACT FROM AUTHOR]

In this study, we investigated the gas-sensing mechanism in bottom-gate organic field-effect transistors (OFETs) using poly(triarylamine) (PTAA). A comparison of different device architectures revealed that the top-contact structure exhibited superior gas-sensing performance in terms of field-effect mobility and sensitivity. The thickness of the active layer played a critical role in enhancing these parameters in the top-contact structure. Moreover, the distance and pathway for charge carriers to reach the active channel were found to significantly influence the gas response. Additionally, the surface treatment of the SiO2 dielectric with hydrophobic self-assembled mono-layers led to further improvement in the performance of the OFETs and gas sensors by effectively passivating the silanol groups. Under optimal conditions, our PTAA-based gas sensors achieved an exceptionally high response (>200%/ppm) towards NO2. These findings highlight the importance of device and interface engineering for optimizing gas-sensing properties in amorphous polymer semiconductors, offering valuable insights for the design of advanced gas sensors. [ABSTRACT FROM AUTHOR]

Amorphous semiconductors are widely applied to electronic and energy-conversion devices owing to their high performance and simple fabrication processes. The topological concept of the Berry curvature is generally ill-defined in amorphous solids, due to the absence of long-range crystalline order. Here, we demonstrate that the Berry curvature in the short-range crystalline order of kagome-lattice fragments effectively contributes to the anomalous electrical and magneto-thermoelectric properties in Fe–Sn amorphous films. The Fe–Sn films on glass substrates exhibit large anomalous Hall and Nernst effects comparable to those of the single crystals of topological semimetals Fe3Sn2 and Fe3Sn. With modelling, we reveal that the Berry curvature contribution in the amorphous state likely originates from randomly distributed kagome-lattice fragments. This microscopic interpretation sheds light on the topology of amorphous materials, which may lead to the realization of functional topological amorphous electronic devices. The topological character of solids is usually revealed by considering the Berry curvature of electronic bands in a periodic crystal. Here, authors demonstrate the influence of the Berry curvature on the electronic properties of an amorphous thin film. [ABSTRACT FROM AUTHOR]

High quality thin film p‐n junction diodes with high rectification ratios and low ideality factors have been fabricated from metal oxides, such as amorphous oxide semiconductors (AOSs), and characterized. Plasma treatment of interfaces has been demonstrated to improve devices made from AOSs, using current–voltage (I–V) measurements. However, capacitance–voltage (C–V) measurements of the devices have been scarcely reported in the literature. Therefore, the focus of this work is characterization of cuprous oxide (Cu2O)/amorphous zinc‐tin oxide (a‐ZTO) thin film heterojunction diodes using C–V analysis. Performance differences of plasma‐treated and untreated diodes that are difficult to observe in I–V analysis are more prominent in C–V analysis. Moreover, C–V analysis allows extraction of charge density profiles, which is a measure of the defect state density that led to intrinsic doping. The variation of doping densities of the untreated diode across the full range of applied reverse bias is shown to be up to 2 orders of magnitude, while those of the treated diodes are within a factor of 10 only. Junction charge profiles, interfacial charge depletion, and accumulation that are key features of rectifying diodes are shown to be clearly distinct between untreated, nitrogen‐treated, and oxygen‐treated diodes, thus explaining why oxygen‐treated diodes are superior. [ABSTRACT FROM AUTHOR]

The disordered microscopic structure of amorphous semiconductors causes the formation of band tails in the density of states (DOS) that strongly affect charge transport properties. Such band tail properties are crucial for understanding and optimizing thin-film device performance with immense relevance for large area electronics. Among the available techniques to measure the DOS, Kelvin Probe Force Microscopy (KPFM) is exceptional as it enables precise local electronic investigations combined with microscopic imaging. However, a model to interpret KPFM spectroscopy data on amorphous semiconductors of finite thickness is lacking. To address this issue, we provide an analytical solution to the Poisson equation for a metal–insulator–semiconductor junction interacting with the atomic force microscope tip. The solution enables us to fit experimental data for semiconductors with finite thickness and to obtain DOS parameters, such as band tail width, doping density, and flat band potential. To demonstrate our method, we perform KPFM experiments on Indium–Gallium–Zinc Oxide (IGZO) thin-film transistors (IGZO-TFTs). DOS parameters compare well with values obtained with photocurrent spectroscopy. We demonstrate the relevance of the developed method by investigating the impact of ionizing radiation on DOS parameters and TFT performance. Our results provide clear evidence that the observed shift in threshold voltage is caused by static charge in the gate dielectric, leading to a shift in flat band potential. Band-tails and doping density are not affected by the radiation. The developed methodology can be easily translated to different semiconductor materials and paves the way for quantitative microscopic mapping of local DOS parameters in thin-film devices. [ABSTRACT FROM AUTHOR]

Abstract This paper presents a new structure consisting of a silicon PIN junction with high breakdown voltage and low dark current with two Guard rings. To achieve the optimal structure, the effect of the parameters on the breakdown voltage and the dark current of the device has been investigated and simulated. The intrinsic thickness and impurity, the penetration depth of the active area and guard rings, location and number of guard rings, thickness, and distance between guard rings are the effective parameters of the device's breakdown voltage and dark current. In the proposed structure by placing two guard rings around the active area, the results show that an electric field is distributed at the edge of the active area between the guard rings, which leads to an increase of 292.62 V in breakdown voltage compared to the device without a guard ring.

Amorphous oxide semiconductor thin‐film transistors (AOS TFTs) are ever‐increasingly utilized in displays. However, to bring high mobility and excellent stability together is a daunting challenge. Here, the carrier transport/relaxation bilayer stacked AOS TFTs are investigated to solve the mobility‐stability conflict. The charge transport layer (CTL) is made of amorphous In‐rich InSnZnO, which favors big average effective coordination number for all cations and more edge‐shared structures for better charge transport. Praseodymium‐doped InSnZnO is used as the charge relaxation layer (CRL), which substantially shortens the photoelectron lifetime as revealed by femtosecond transient absorption spectroscopy. The CTL and CRL with the thickness suitable for industrial production respectively afford minute potential barrier fluctuation for charge transport and fast relaxation for photo‐generated carriers, resulting in transistors with an ultrahigh mobility (75.5 cm2 V−1 s−1) and small negative‐bias‐illumination‐stress/positive‐bias‐temperature‐stress voltage shifts (−1.64/0.76 V). The design concept provides a promising route to address the mobility‐stability conflict for high‐end displays. [ABSTRACT FROM AUTHOR]

The amorphous calcogenide semiconductor As0.63S2.70Sb1.37Te0.30 was synthesized and thin films based on it were obtained. XRD and optical images investigations showed the amorphous and homogeneous nature of the samples. The optical transmission spectrum in the UV-Vis range of As0.63S2.70Sb1.37Te0.30 thin films shows good transparency in the spectral range 0.7-3.5 µm with a single absorption threshold at 2.05 eV and with refractive index in infrared 2.3. The irradiation of films with light leads to a parallel shift of the transmission spectrum to the IR range. The materials with As0.63S2.70Sb1.37Te0.30 composition have high optical transparency have high optical transparency that make they promises for applications in holographic memory devices, optical amplitude and phase recorder, optical processing units and others. [ABSTRACT FROM AUTHOR]

The duration and radius of charge-carriers’ thermalization during the photogeneration of them in amorphous molecular semiconductors (AMS) are studied in present work. The samples in the form of thin layers of carbazole-containing materials obtained by pouring toluene solutions are used in the experiments of spectral-sensitivity measurements. A phenomenological model for the thermalization process based on the assumption of the Newtonian nature of the energy-loss rate dependence for nonequilibrium electron is proposed. Within the model, the dependences of the thermalization duration on the frequency of the exciting light, the AMS temperature and the parameters determining the speed and range of energies are established. As shown, the excess energy losses are realized in the system by an unbalanced electric-charge carrier. Comparison of them with experimental data is demonstrated. The aim of the work is both the experimental study of the thermalization process of carbazolecontaining AMS located in an external electric field during photoexcitation of them and the development of a relevant model for charge-carriers’ thermalization process. [ABSTRACT FROM AUTHOR]

Conductivity doping has emerged as an indispensable method to overcome the inherently low conductivity of amorphous organic semiconductors, which presents a great challenge in organic electronics applications. While tuning ionization potential and electron affinity of dopant and matrix is a common approach to control the doping efficiency, many other effects also play an important role. Here, we show that the quadrupole moment of the dopant anion in conjunction with the mutual near-field host-dopant orientation have a crucial impact on the conductivity. In particular, a large positive quadrupole moment of a dopant leads to an overscreening in host-dopant integer charge transfer complexes. Exploitation of this effect may enhance the conductivity by several orders of magnitude. This finding paves the way to a computer-aided systematic and efficient design of highly conducting amorphous small molecule doped organic semiconductors. Doping is widely adopted to make organic semiconductors more conductive, yet the impact of molecular electronic properties on doping performance is still not fully understood. Armleder et al. compute host-dopant interactions and show that a short-range overscreening effect strongly affects conductivity. [ABSTRACT FROM AUTHOR]

The model of multiple trapping into energy-distributed states is a successful tool to describe the transport of nonequilibrium charge carriers in amorphous semiconductors. Under certain conditions, the model leads to anomalous diffusion equations that contain time fractional derivatives. From this perspective, the multiple-trapping model can be used to interpret fractional transport equations, formulate initial and boundary conditions for them, and to construct numerical methods for solving fractional kinetic equations. Here, we shortly review the application of fractional multiple-trapping equations to problems of transient photoconductivity relaxation and transit–time dispersion in the time-of-flight experiment and discuss the connection of the multiple-trapping model with generalized fractional kinetic equations. Different types of charge leakage are discussed. The tempered fractional relaxation is obtained for recombination via localized states and distributed order equations arise for the non-exponential density of states presented as a weighted mixture of exponential functions. Analytical solutions for photocurrent decay in transient photoconductivity and time-of-flight experiments are provided for several simplified situations. [ABSTRACT FROM AUTHOR]

Amorphous mixed-anion semiconductors (AMASs) such as amorphous zinc oxynitride and amorphous zinc oxysulfide (a-ZnOS) have attracted attention as rare-metal-free amorphous semiconductors that exhibit electron mobility comparable to or greater than the electron mobilities of typical amorphous oxide semiconductors (AOSs), including amorphous In–Ga–Zn–O (a-IGZO). A characteristic feature of AMASs is that their conduction-band minimum (CBM) mainly consists of s-orbitals of the single cation, in contrast to conventional AOSs, whose CBM is composed of s-orbitals of multiple cations. This unique band structure suggests that the potential of carrier electrons in AMASs exhibits less spatial fluctuation than that of carrier electrons in AOSs. In this study, we analyzed the temperature dependence of the electron transport properties of a-ZnOS thin films using the random barrier model to evaluate the potential barrier height and its spatial variation. The analyses revealed that the barrier height of a-ZnOS is comparable to that of a-IGZO. This result was attributed to the large covalent nature of Zn–S bonds strongly influencing the potential at the CBM through the antibonding interaction. [ABSTRACT FROM AUTHOR]

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Raman spectra of thermally evaporated As _2 Se _3 and Se-rich (above 50 at. %) ternary As–Se–S films measured at high (above 1 MW cm ^−2 ) excitation power density reveal new narrow peaks emerging during the measurements which are attributed to crystalline arsenolite As _2 O _3 . The latter is formed on the As–Se–S film surface due to thermal decomposition of the film and oxidation of arsenic in ambient air. Contrary to As _2 S _3 , for which the photoassisted oxidation of the film surface requires UV light, for narrower-gap As–Se–S films this effect occurs under illumination by visible light.

A series of different high κ dielectrics such as HfO2, ZrO2, and Al2O3 thin films were studied as an alternative material for the possible replacement of traditional SiO2. These large areas, as well as conformal dielectrics thin films, were grown by the atomic layer deposition technique on a p-type silicon substrate at two different deposition temperatures (150 and 250 °C). Atomic force microscopic study reveals that the surface of the films is very smooth with a measured rms surface roughness value of less than 0.4 nm in some films. After the deposition of the high κ layer, a top metal electrode was deposited onto it to fabricate metal oxide semiconductor capacitor (MOSCAP) structures. The I–V curve reveals that the sample growth at high temperatures exhibits a high resistance value and lower leakage current densities. Frequency-dependent (100 kHz to 1 MHz) C–V characteristics of the MOSCAPs were studied steadily. Furthermore, we have prepared a metal oxide semiconductor field-effect transistor device with Al-doped ZnO as a channel material, and the electrical characteristic of the device was studied. The effect of growth temperature on the structure, surface morphology, crystallinity, capacitance, and dielectric properties of the high κ dielectrics was thoroughly analyzed through several measurement techniques, such as XRD, atomic force microscopy, semiconductor parameter analysis, and ultraviolet-visible spectroscopy. [ABSTRACT FROM AUTHOR]

The purpose of this work is to study the properties of amorphous molecular semiconductors (AMSs), which are used as templates for the development of ordered nanoobjects. Photosensitive AMSs are carbazolecontaining compounds for recording optical information in real time. They have high sensitivity and spatial resolution, and can work in automatic mode without an operator. It is important to improve the characteristics of AMSs and modes of their application. When optimizing the composition of AMSs, the most important problem is to find out the mechanisms of thermalization of carriers, the quantum yield in AMSs under photoexcitation, and the electrophysical phenomena. The technique of thermally stimulated depolarization is used for the analysis of these processes. This technique makes it possible to study the kinetics of the electric charge formed due to the orientation of permanent dipoles or the charge trapped by such deep traps as structural defects, impurity centres, charges accumulated at the interphase boundaries in the film. The spectral sensitivity is measured for the samples comprised of thin layers of carbazolecontaining materials, which were produced by pouring toluene solutions. As found out, the quantum yield of photogeneration is decreased at higher wavelengths of light. A model based on the assumption of the Newtonian nature of the dependence of the rate of energy loss for a nonequilibrium electron is proposed. Within the framework of this model, the dependences of the length and time of thermalization on the frequency of the exciting light, the temperature of the AMSs, and the parameter determining the rate of loss of excess energy by a non-equilibrium carrier of electric charge are determined. As a result, a phenomenological model of the electrophotographic process is proposed, and the composition of the AMSs is optimized. A template with an area of ≅4 cm² and a spatial period of ≅3–1 μm is fabricated. [ABSTRACT FROM AUTHOR]

The large‐area low‐temperature processing capability and versatile characteristics of amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to promote the developments of next‐generation displays, 3D integrated circuit (3DIC), flexible chips, and electronics. However, the abundant native defects in AOSs engrain an inherent trade‐off between high mobility and trustworthy stability in AOS TFTs, fundamentally limiting the performance metrics and integration scale of oxide‐based electronics. To surmount this obstacle, the bilayer AOS channel is highly expected to combine the merits of diversified AOSs, while the efficiency of such an AOS "heterojunction" is debatable. This work systematically compares the TFTs based on amorphous InGaZnO (a‐IGZO), amorphous InZnO (a‐IZO), and a‐IZO/a‐IGZO bilayer. The active cation interaction between metal‐oxide semiconductors gives rise to a mixed AOS layer rather than a heterojunction channel, corresponding to moderate performance metrics. Such a spontaneous cation interdiffusion is effectively prevented using a dense metal‐oxide dielectric interlayer, aluminum oxide (AlOx). The sharpened interface effectively forms an abrupt metal‐oxide heterojunction, while the electron can still tunnel through the ultrathin AlOx to create a quantum well of 2D electron gas (2DEG). The overall performance and reliability of multilayer AOS TFT are synergistically enhanced using the proposed abrupt metal‐oxide heterojunction architecture. [ABSTRACT FROM AUTHOR]

A new method is presented for calculating the interband absorption spectrum for amorphous semiconductors using the Kubo-Greenwood formula in accordance with the Davis-Mott approximation method. It is shown that the calculated spectrum of interband absorption explained the experimental results, and a method is recommended to reduce the indefinite integral in the Kubo-Greenwood formula to a definite integral. It is explained that the boundaries of a definite integral are determined according to the empirical Tauc model, written for the distribution of the density of electronic states in amorphous semiconductors.

In that research field of Bi-Fe-O series compounds, the design and development of amorphous Bi-Fe-O semiconductor with high photocatalytic activity and pure phase BiFeO 3 with multiferroic properties are two major challenges. Herein, the amorphous Bi-Fe-O series semiconductor is prepared by mechanical alloying method using Fe 2 O 3 and Bi 2 O 3 as the raw materials, and the pure phase nano-BiFeO 3 crystalline is subsequently obtained by heat treatment process. Meanwhile the microstructure, band gap structure and photocatalytic or electromagnetic activity of amorphous and crystallized Bi-Fe-O semiconductor are also investigated. The results show that after 25 h of mechanical alloying, the crystalline structure of Bi 2 O 3 and Fe 2 O 3 is destroyed, and the system is transformed into amorphous phase. Moreover, photocatalytic hydrogen production experiment shows that amorphous Bi-Fe-O semiconductor has the highest photocatalytic hydrogen production rate which is 4.03 μmol/g/h, due to more defects and impurity energy levels. In addition, pure phase nano-BiFeO 3 crystalline can be obtained when the heat treatment temperature of amorphous Bi-Fe-O semiconductor is 600°C, which have the best ferroelectric properties. This work not only provides new ideas for the research and development of amorphous semiconductor, but also proposes a green method to prepare pure phase nano-BiFeO 3 crystalline. • Amorphous Bi-Fe-O series semiconductors are constructed by mechanical alloying method. • Pure phase nano-BiFeO 3 is prepared by heat treatment from the amorphous Bi-Fe-O materials. • The highest hydrogen production rate of amorphous Bi-Fe-O semiconductors is 4.02 μmol/g/h. • Pure phase nano-BiFeO 3 obtained at 600°C have the best ferroelectric properties. [ABSTRACT FROM AUTHOR]

Discussed in this paper are the singularity and self-organizing effect of instability and randomness under the influence of external white noise on formation of non-crystalline materials. The random nature of the receiving medium together with the disorganizing effect was found to be capable to initiate formation of qualitatively new self-organized structures in non-crystalline solids. Also analyzed in the paper is the effect of a random temperature field applied to the melt during the cooling process in non-crystalline As-S(Se) semiconductor systems. The conditions for a non-crystalline system in a fluctuating external environment to adjust its properties to the average properties of the environment and to correspond to the deterministic case were identified. Furthermore, the conditions for non-additive reaction of the system to a random environment and formation of a new mode of energy conversion in the self-organized structure at the nanoscale level are determined. The spectrum of the structures created in this way is more diverse as compared to the spectrum corresponding to respective deterministic conditions. [ABSTRACT FROM AUTHOR]

There have been significant differences in principle electrical parameters between amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) and silicon-based devices for their distinct conduction mechanisms. Additionally, threshold voltage is one of the key parameters in device characterization and modeling. In this work, a threshold voltage model is developed for AOS TFTs considering the various density of exponential tail states below the conduction band, including degenerate conduction. The threshold condition is defined where the density ratio of free carriers to the trapped carriers reaches a critical value depending on the distribution parameters of tail states. The resulting threshold voltage expression is fully analytical and is of clear physical meaning, with simple parameter extraction methods. Numerical and experimental verifications show that this model provides appropriate values of threshold voltage for devices with different sub-gap tail states, which could be a useful method for identifying the threshold voltage of a large variety of AOS TFTs. [ABSTRACT FROM AUTHOR]

Compared with conventional silicon-based semiconductors, amorphous oxide semiconductors present several advantages, including the possibility of room-temperature fabrication, excellent uniformity, high transmittance, and high electron mobility. Notably, the application of oxide semiconductors to flexible electronic devices requires a low-temperature fabrication process. However, for the realization of semiconductor characteristics and stable products, the fabrication process requires annealing at temperatures of 300 °C or higher. To address this, a low-temperature microwave annealing method, which improves the electrical characteristics of a transistor and reduces the production time compared with the conventional annealing method, is presented herein. Microwave annealing is a well-known method of annealing that minimizes the heat energy transferred to a substrate via instantaneous heat transfer through the vibrations of the lattice in the material during microwave irradiation and is suitable as a low-temperature annealing method. In this study, we evaluate the electrical characteristics of devices subjected to conventional annealing at 200 °C and 300 °C for 1 h and microwave annealing at 200 °C for 10 min. For the device subjected to microwave annealing at 200 °C for 10 min, the threshold voltage, current on/off ratio, subthreshold swing, and saturation mobility are 13.9 V, 1.14 × 105, 3.05 V/dec, and 4.23 cm2/V · s, respectively. These characteristic results are far superior to the characteristic results of the device subjected to conventional annealing at 200 °C for 1 h and are equivalent to those of the device treated at 300 °C for 1 h. Thus, this study develops a more effective annealing method, which facilitates low-temperature fabrication in a reduced period. [ABSTRACT FROM AUTHOR]

The Tauc–Lorentz–Urbach (TLU) dispersion model allows us to build a dielectric function from only a few parameters. However, this dielectric function is non-analytic and presents some mathematical drawbacks. As a consequence of this issue, the model becomes inaccurate. In the present work, we will adopt a procedure to conveniently transform the TLU model into a self-consistent dispersion model. The transformation involves the integration of the original TLU imaginary dielectric function ϵ 2 by using a Lorentzian-type function of semi-width, Γ. This novel model is analytic and obeys the other necessary mathematical requirements of the optical constants of solid-state materials. The main difference with the non-analytic TLU model occurs at values of the photon energy near or lower than that of the bandgap energy (within the Urbach absorption region). In particular, this new model allows us to reliably extend the optical characterization of amorphous-semiconductor thin films within the limit to zero photon energy. To the best of our knowledge, this is the first time that the analytic TLU model has been successfully used to accurately determine the optical constants of unhydrogenated a-Si films using only their normal-incidence transmission spectra. [ABSTRACT FROM AUTHOR]

In this study, we propose tunable pH sensors based on the electric-double-layer transistor (EDLT) with time-dependent sensitivity characteristics. The EDLT is able to modulate the drain current by using the mobile ions inside the electrolytic gate dielectric. This property allows the implementation of a device with sensitivity characteristics that are simply adjusted according to the measurement time. An extended gate-type, ion-sensitive, field-effect transistor consisting of a chitosan/Ta2O5 hybrid dielectric EDLT transducer, and an SnO2 sensing membrane, were fabricated to evaluate the sensing behavior at different buffer pH levels. As a result, we were able to achieve tunable sensitivity by only adjusting the measurement time by using a single EDLT and without additional gate electrodes. In addition, to demonstrate the unique sensing behavior of the time-dependent tunable pH sensors based on organic–inorganic hybrid EDLT, comparative sensors consisting of a normal FET with a SiO2 gate dielectric were prepared. It was found that the proposed pH sensors exhibit repeatable and stable sensing operations with drain current deviations <1%. Therefore, pH sensors using a chitosan electrolytic EDLT are suitable for biosensor platforms, possessing tunable sensitivity and high-reliability characteristics. [ABSTRACT FROM AUTHOR]

We focused on the importance of solvent evaporation governed by the temperature of the pre-annealing stage (TS) in solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). We controlled TS based on the boiling point (BP) of the solvent used. When TS reaches the BP, the field effect mobility is found to be about 1.03 cm2/V s, which is 10 times larger than the TS < Bp case (0.13 cm2/V s). The reason is presumed to be that residual organic defects are effectively removed as TS increases. In addition, when Ts is beyond Bp, the mobility is rather decreased due to structural defects such as pores and pinholes. Based on our results, it is noted that TS plays a significant role in the enhancement of electrical performance and stability of solution-processed ZTO TFTs. [ABSTRACT FROM AUTHOR]

In this work, we have proposed an extraction method for equivalent oxide thickness (EOT) of a thin high-dielectric-constant ($\kappa $) gate insulator (GI) through direct capacitance–voltage (${C}$ – ${V}$) measurements in amorphous indium tungsten oxide (a-IWO) nano-sheet (NS) junctionless (JL) transistors (a-IWO NS-JLTs). Without additional metal/insulator/Si-substrate (MIS) ${C}$ – ${V}$ measurements, the proposed extraction method can directly extract EOT (or equivalent $\kappa $ values) of a thin HfO2GI at different ON-state gate voltages (${V}_{G}$) in a-IWO NS-JLTs. Results of ${C}$ – ${V}$ measurements show that the extracted EOT varies with ON-state ${V}_{G}$ owing to the gate-controllable conductance of the amorphous oxide semiconductor (AOS) NS channel. Finally, the extracted EOT can be used to estimate the field-effect mobility ($\mu _{\text{FE}}$) of a-IWO NS-JLTs at different ON-state ${V}_{G}$. [ABSTRACT FROM AUTHOR]

This article discusses the advancements in device technology for integrated circuits (ICs) in the past decade. The main focus has been on developing higher-performance devices with lower power consumption and a smaller footprint. Three strategies have emerged: "more Moore" which introduces new structures to improve the performance of silicon-based transistors, using emerging semiconductors with high mobility, and developing novel devices based on new state variables. The article also highlights recent developments in the field and presents a collection of papers on emerging materials and transistors for ICs. [Extracted from the article]

This article discusses the potential of amorphous oxide semiconductor (AOS) for monolithic 3D dynamic random-access memory (DRAM). AOS, specifically indium gallium zinc oxide (IGZO), has properties that make it suitable for DRAM cell transistors, such as high carrier mobility and a large energy bandgap. The use of AOS in DRAM could enable monolithic 3D integration, increasing bandwidth, reducing access latency, and achieving high density. However, there are challenges to overcome, such as reducing interface resistance and controlling defects in the AOS film. If these challenges are addressed, AOS DRAM could revolutionize the field and find applications in emerging technologies like artificial intelligence and the Internet of Things. [Extracted from the article]

Several studies on amorphous oxide semiconductor thin-film transistors (TFTs) applicable to next-generation display devices have been conducted. To improve the poor switching characteristics and gate bias stability of co-sputtered aluminum–indium–zinc oxide (AIZO) TFTs, we fabricate Al2O3/indium–zinc oxide (IZO) dual-active-layer TFTs. By varying the Al2O3 target power and oxygen partial pressure in the chamber during Al2O3 back-channel deposition, we optimize the electrical characteristics and gate bias stability of the Al2O3/IZO TFTs. The Al2O3/IZO TFTs, which are fabricated under 50 W Al2O3 target power and 13% oxygen partial pressure conditions, exhibit a high electron mobility of 23.34 cm2/V·s, a low threshold voltage of 0.96 V, an improved on–off current ratio of 6.8 × 107, and a subthreshold swing of 0.61 V/dec. Moreover, by increasing the oxygen partial pressure in the chamber, the positive and negative bias stress values improve to +0.32 V and −2.08 V, respectively. X-ray photoelectron spectroscopy is performed to reveal the cause of these improvements. [ABSTRACT FROM AUTHOR]

In this paper, we demonstrate biocompatible micromachined buckled membranes for the operation in liquids. The membranes feature diameters between 600 and 800 $\mu \text{m}$ as well as integrated piezoelectric thin film actuators, thus enabling switching between the bistable states. The membrane material is known to be not biocompatible, hence a hydrogenated amorphous silicon carbide (a-SiC:H) layer is deposited on the surface. For demonstration purposes, a 70 nm ±3 nm thin a-SiC:H coating with a specific silicon to carbon ratio was chosen, with a negligible impact on the overall switching performance of the bistable membranes. Furthermore, a relation between the membrane center velocity at the first characteristic resonance frequency and the switching ability of a membrane in different viscous fluids is shown. Based on a small signal analysis the switching behavior can be predicted. The membranes were successfully switched in liquids with a dynamic viscosity up to 286 mPa $\cdot \text{s}$. The biocompatibility of the membranes was examined by growing Caco-2 cells, a human carcinoma cell line, on a-SiC:H thin films, featuring different carbon contents and organic surface treatments. The proliferation and adhesion of the cells on the substrates are examined in an empirical cell growth and removal study. Only a-SiC:H surfaces pre-treated with an O2-plasma and coated with Collagen Type I indicated to provide an environment of improved cell adhesiveness compared to other surface treatments. The biological investigations resulted in good cell proliferation, that also depends on the altered hydrophilicity of the surface, as well as on the carbon content of the a-SiC:H thin films. This study reveals that a broad range of biocompatible a-SiC:H surfaces can be prepared, whereby the cell growth can be tailored in terms of proliferation and adhesion for different biomedical application scenarios. Finally, this paper reports on the mechanical features of bistable, buckled membranes and their suitability as a growth substrate for human cell cultures, due to the good biocompatibility of a-SiC:H thin films. We therefore suggest that it will be feasible to grow cells on bistable MEMS membranes, enabling cell experiments in liquid medical environments, with both mechanically excitable and biocompatible surfaces. [2022-0006] [ABSTRACT FROM AUTHOR]