Editorial for the Special Issue "Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29".

In order to suppress the crosstalk and provide a high on-current to melt the incorporated phase change materials in the PCRAM array and 3D stacking chips, the authors [[8]] investigated the influence of Si concentration on the electrical properties of the Si-Te ovonic threshold selector. 36986003 3 Wang K., He Q., Yang D., Pi X. Highly Efficient Energy Transfer from Silicon to Erbium in Erbium-Hyperdoped Silicon Quantum Dots. 10.3390/nano13010121 2 Sun T., Li D., Chen J., Wang Y., Han J., Zhu T., Li W., Xu J., Chen K. Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode. [Extracted from the article]