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The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effective mass is found to be strongly enhanced and independent of the degree of spin polarization, which indicates that the mass enhancement is not related to the electrons' spins. The observed effect turns out to be universal for silicon-based 2D electron systems, regardless of random potential, and cannot be explained by existing theories. [ABSTRACT FROM AUTHOR]

Improving the efficiency of spin generation, injection, and detection remains a key challenge for semiconductor spintronics. Electrical injection and optical orientation are two methods of creating spin polarization in semiconductors, which traditionally require specially tailored p-n junctions, tunnel or Schottky barriers. Alternatively, we introduce here a novel concept for spin-polarized electron emission/injection combining the optocoupler principle based on vacuum spin-polarized light-emitting diode (spin VLED) making it possible to measure the free electron beam polarization injected into the III-V heterostructure with quantum wells (QWs) based on the detection of polarized cathodoluminescence (CL). To study the spin-dependent emission/injection, we developed spin VLEDs, which consist of a compact proximity-focused vacuum tube with a spin-polarized electron source (p-GaAs(Cs,O) or Na2KSb) and the spin detector (III-V heterostructure), both activated to a negative electron affinity (NEA) state. The coupling between the photon helicity and the spin angular momentum of the electrons in the photoemission and injection/detection processes is realized without using either magnetic material or a magnetic field. Spin-current detection efficiency in spin VLED is found to be 27% at room temperature. The created vacuum spin LED paves the way for optical generation and spin manipulation in the developing vacuum semiconductor spintronics. [ABSTRACT FROM AUTHOR]

Spin-polarized currents are investigated in symmetric (asymmetric) resonant magnetic tunnel junctions (S- (A)-RMTJs) including a non-magnetic metal (NM) layer. Charge-diode and spin-diode features are found for the S-RMTJs at definite thicknesses of MgO and NM layers. Owing to the presence of quantum-well states, a full spin polarization can be achieved by proper choice of the thickness of NM layer. The charge and spin currents have increased for the A-RMTJs in comparison to those of the S-RMTJs due to different properties of ferromagnetic electrodes. The present study suggests new spin-filter devices to use in the spintronics field. [ABSTRACT FROM AUTHOR]

Spin transport was studied in a two-dimensional electron gas hosted in a wide GaAs quantum well occupying two subbands. Using space and time Kerr rotation microscopy to image drifting spin packets under an in-plane accelerating electric field, optical injection and detection of spin polarization were achieved in a pump–probe configuration. The experimental data exhibited high spin mobility and long spin lifetimes allowing us to obtain the spin–orbit fields as a function of the spin velocities. Surprisingly, above moderate electric fields of 0.4 V/cm with velocities higher than 2 µm/ns, we observed a dependence of both bulk and structure-related spin–orbit interactions on the velocity magnitude. A remarkable feature is the increase in the cubic Dresselhaus term to approximately half of the linear coupling when the velocity is raised to 10 µm/ns. In contrast, the Rashba coupling for both subbands decreases to about half of its value in the same range. These results yield new information on the application of drift models in spin–orbit fields and about limitations for the operation of spin transistors. [ABSTRACT FROM AUTHOR]

The two-dimensional (2D) Ruddlesden−Popper organic-inorganic halide perovskites such as (2D)-phenethylammonium lead iodide (2D-PEPI) have layered structure that resembles multiple quantum wells (MQW). The heavy atoms in 2D-PEPI contribute a large spin-orbit coupling that influences the electronic band structure. Upon breaking the inversion symmetry, a spin splitting ('Rashba splitting') occurs in the electronic bands. We have studied the spin splitting in 2D-PEPI single crystals using the circular photogalvanic effect (CPGE). We confirm the existence of Rashba splitting at the electronic band extrema of 35±10 meV, and identify the main inversion symmetry breaking direction perpendicular to the MQW planes. The CPGE action spectrum above the bandgap reveals spin-polarized photocurrent generated by ultrafast relaxation of excited photocarriers separated in momentum space. Whereas the helicity dependent photocurrent with below-gap excitation is due to spin-galvanic effect of the ionized spin-polarized excitons, where spin polarization occurs in the spin-split bands due to asymmetric spin-flip. Hybrid organic-inorganic perovskites (HOIP) have high potential for spintronics applications. Using the circular photogalvanic effect the authors demonstrate the existence of Rashba-splitting in the continuum bands of a 2D layered HOIP that results from inversion symmetry breaking along the growth direction. [ABSTRACT FROM AUTHOR]

In this work we focus on the characterization methods allowing fast, cheap, and easy identification of photoanode TiO2 layer as well as quantum dots on the TiO2 surface for photovoltaic application. Application of the colloidal quantum dots material for the production of quantum dots solar cell is a key issue for mass production. At the same time there is a demand for a method to control the production steps for the deposition process for both photoanode and nanomaterial. The method has to be fast and cheap as well as efficient in order to meet the requirements imposed by production processes. For this purpose we propose to use a micro Raman spectroscopy as an efficient method to verify the presence of QDs. In this work we compare the results obtained by scanning electron microscopy with the Raman spectroscopy in theme of the pros and cons of these techniques. [ABSTRACT FROM AUTHOR]

The 1-D nanoscale structures are studied with a potential relief containing magnetic barriers separated by nonmagnetic quantum wells in the absence of exchange interaction between the magnetic moments of adjacent barriers. The considered structure is the sequence of N barriers divided into two “ferromagnetic domains” of the length n and N - n -- 1, both having parallel internal fields. In contrast, the internal field of the nth barrier is not coplanar with respect to the internal fields of the left and/or right “domains.” The degree of spin polarization of an electron wave transmitted through this system is calculated with the assumption that the incident wave is unpolarized with the degree of its polarization equals zero. It is shown that the degree of polarization of the transmitted wave as a function of the impulse exhibits a sequence of sufficiently wide plateaus, which are close to unity. In particular, there are significant deviations from the known spintronics phenomena found earlier in this system such as the valve, filter, and giant magnetoresistance effects. This circumstance provides opportunities for managing the transport properties of the system by varying the noncoplanar degrees of freedom of the system. [ABSTRACT FROM AUTHOR]

In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well (QW). All measurements were performed under applied voltage, magnetic fields up to 15 T and using linearly polarized laser excitation. It was observed that the QRs' PL intensity and the circular polarization degree (CPD) oscillate periodically with applied voltage under high magnetic fields at 2 K. Our results demonstrate an effective voltage control of the optical and spin properties of InGaAs QRs inserted into RTDs. [ABSTRACT FROM AUTHOR]

We present a GaAs/AlGaAs-based quantum well device capable of achieving an appreciable spin polarization coupled with high electron transmission. Our numerical results indicate that the device is able to achieve a high spin polarization without the need for less commonly used materials with high g-factors required by previously proposed semiconductor-based systems. The electron transmission and spin polarization amplitude of our structure is found to be robust to the length of the parabolic well, which could ease the fabrication of such structures in practical applications. [ABSTRACT FROM AUTHOR]

Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarization direction of p-doped bulk GaAs grown in the (001) direction lies in the sample plane and is perpendicular to the applied electric field, which is the same as that in GaAs quantum well. This research indicates that circularly polarized photocurrent is a new optical approach to investigate the current-induced spin polarization at room temperature. [ABSTRACT FROM AUTHOR]

In this paper, we investigate electronic transport through II-VI semiconductor resonant-tunneling structures containing diluted magnetic impurities. Due to the exchange interaction between the conduction electrons and the impurities, there arises a giant Zeeman splitting in the presence of a moderately low magnetic field. As a consequence, when the quantum well is magnetically doped, the current-voltage characteristics shows two peaks corresponding to transport for each spin channel. This behavior is experimentally observed and can be reproduced with a simple tunneling model. The model thus allows to analyze other configurations. First, we further increase the magnetic field, which leads to a spin polarization of the electronic current injected from the leads, thus giving rise to a relative change in the current amplitude. We demonstrate that the spin polarization in the emitter can be determined from such a change. Furthermore, in the case of an injector with magnetic impurities, our model shows a large increase in peak amplitude accompanied by a shift of the resonance to higher voltages with increasing fields. We find that this effect arises from a combination of 3-D incident distribution, giant Zeeman splitting, and broad resonance linewidth. [ABSTRACT FROM AUTHOR]