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Vacuum Spin LED: First Step towards Vacuum Semiconductor Spintronics.
- Source :
-
Nanomaterials (2079-4991) . Feb2023, Vol. 13 Issue 3, p422. 12p. - Publication Year :
- 2023
-
Abstract
- Improving the efficiency of spin generation, injection, and detection remains a key challenge for semiconductor spintronics. Electrical injection and optical orientation are two methods of creating spin polarization in semiconductors, which traditionally require specially tailored p-n junctions, tunnel or Schottky barriers. Alternatively, we introduce here a novel concept for spin-polarized electron emission/injection combining the optocoupler principle based on vacuum spin-polarized light-emitting diode (spin VLED) making it possible to measure the free electron beam polarization injected into the III-V heterostructure with quantum wells (QWs) based on the detection of polarized cathodoluminescence (CL). To study the spin-dependent emission/injection, we developed spin VLEDs, which consist of a compact proximity-focused vacuum tube with a spin-polarized electron source (p-GaAs(Cs,O) or Na2KSb) and the spin detector (III-V heterostructure), both activated to a negative electron affinity (NEA) state. The coupling between the photon helicity and the spin angular momentum of the electrons in the photoemission and injection/detection processes is realized without using either magnetic material or a magnetic field. Spin-current detection efficiency in spin VLED is found to be 27% at room temperature. The created vacuum spin LED paves the way for optical generation and spin manipulation in the developing vacuum semiconductor spintronics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20794991
- Volume :
- 13
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Nanomaterials (2079-4991)
- Publication Type :
- Academic Journal
- Accession number :
- 161871961
- Full Text :
- https://doi.org/10.3390/nano13030422