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Laser–plasma interaction and hot electrons have been characterized in detail in laser irradiation conditions relevant for direct-drive inertial confinement fusion. The experiment was carried out at the Gekko XII laser facility in multibeam planar target geometry at an intensity of approximately $3\times {10}^{15}$ W/cm2. Experimental data suggest that high-energy electrons, with temperatures of 20–50 keV and conversion efficiencies of $\eta , were mainly produced by the damping of electron plasma waves driven by two-plasmon decay (TPD). Stimulated Raman scattering (SRS) is observed in a near-threshold growth regime, producing a reflectivity of approximately $0.01\%$ , and is well described by an analytical model accounting for the convective growth in independent speckles. The experiment reveals that both TPD and SRS are collectively driven by multiple beams, resulting in a more vigorous growth than that driven by single-beam laser intensity.

In situ femtosecond x-ray diffraction measurements and ab initio molecular dynamics simulations were performed to study the liquid structure of tantalum shock released from several hundred gigapascals (GPa) on the nanosecond timescale. The results show that the internal negative pressure applied to the liquid tantalum reached $\ensuremath{-}5.6\text{ }(0.8)\text{ }\text{ }\mathrm{GPa}$, suggesting the existence of a liquid-gas mixing state due to cavitation. This is the first direct evidence to prove the classical nucleation theory which predicts that liquids with high surface tension can support GPa regime tensile stress.

Background Blood pressure (BP) variability has reportedly been a risk factor for various clinical events. To clarify the influence of BP visit‐to‐visit variability on adverse events in patients with nonvalvular atrial fibrillation, a post hoc analysis of the J‐RHYTHM Registry was performed. Methods and Results Of 7406 outpatients with nonvalvular atrial fibrillation from 158 institutions, 7226 (age, 69.7±9.9 years; men, 70.7%), in whom BP was measured 4 times or more (14.6±5.0 times) during the 2‐year follow‐up period or until occurrence of an event, constituted the study group. SD and coefficient of variation of BP values were calculated as BP variability. Thromboembolism, major hemorrhage, and all‐cause death occurred in 110 (1.5%), 121 (1.7%), and 168 (2.3%) patients, respectively. When patients were divided into quartiles of systolic BP‐SD (P =0.015 for thromboembolism; HR, 2.60, 95% CI, 1.36–4.97, P =0.004 for major hemorrhage; and HR, 1.85, 95% CI, 1.11–3.07, P =0.018 for all‐cause death) after adjusting for components of the CHA 2 DS 2 ‐VASc score, warfarin and antiplatelet use, atrial fibrillation type, BP measurement times, and others. These findings were consistent when BP‐coefficient of variation was used instead of BP‐SD. Conclusions Systolic BP visit‐to‐visit variability was significantly associated with all adverse events in patients with nonvalvular atrial fibrillation. Further studies are needed to clarify the causality between BP variability and adverse outcomes in patients with nonvalvular atrial fibrillation. Registration URL: https://www.umin.ac.jp/ctr/ ; Unique Identifier: UMIN000001569.

Background Anti-programmed cell death protein 1 (PD-1) antibody monotherapy (PD1) has led to favorable responses in advanced non-acral cutaneous melanoma among Caucasian populations; however, recent studies suggest that this therapy has limited efficacy in mucosal melanoma (MCM). Thus, advanced MCM patients are candidates for PD1 plus anti-cytotoxic T lymphocyte-associated antigen-4 (CTLA-4) combination therapy (PD1 + CTLA4). Data on the efficacy of immunotherapy in MCM, however, are limited. We aimed to compare the efficacies of PD1 and PD1 + CTLA4 in Japanese advanced MCM patients. Patients and methods We retrospectively assessed advanced MCM patients treated with PD1 or PD1 + CTLA4 at 24 Japanese institutions. Patient baseline characteristics, clinical responses (RECIST), progression-free survival (PFS), and overall survival (OS) were estimated using Kaplan–Meier analysis, and toxicity was assessed to estimate the efficacy and safety of PD1 and PD1 + CTLA4. Results Altogether, 329 patients with advanced MCM were included in this study. PD1 and PD1 + CTLA4 were used in 263 and 66 patients, respectively. Baseline characteristics were similar between both treatment groups, except for age (median age 71 versus 65 years; P < 0.001). No significant differences were observed between the PD1 and PD1 + CTLA4 groups with respect to objective response rate (26% versus 29%; P = 0.26) or PFS and OS (median PFS 5.9 months versus 6.8 months; P = 0.55, median OS 20.4 months versus 20.1 months; P = 0.55). Cox multivariate survival analysis revealed that PD1 + CTLA4 did not prolong PFS and OS (PFS: hazard ratio 0.83, 95% confidence interval 0.58-1.19, P = 0.30; OS: HR 0.89, 95% confidence interval 0.57-1.38, P = 0.59). The rate of ≥grade 3 immune-related adverse events was higher in the PD1 + CTLA4 group than in the PD1 group (53% versus 17%; P < 0.001). Conclusions First-line PD1 + CTLA4 demonstrated comparable clinical efficacy to PD1 in Japanese MCM patients, but with a higher rate of immune-related adverse events., Highlights • Anti-PD-1 plus anti-CTLA-4 antibody therapy (PD1 + CTLA4) is an option for patients with advanced mucosal melanoma (MCM). • Data on the efficacy of PD1 + CTLA4 compared with PD-1 monotherapy (PD1) for MCM, however, are limited. • We retrospectively analyzed data from 329 Japanese patients with advanced MCM treated with PD1 or PD1 + CTLA4. • No significant differences in objective response rate, progression-free survival, or overall survival were observed. • Immune-related adverse events resulting in treatment cessation were higher in the PD1 + CTLA4 group.

Background To clarify the influence of hypertension and blood pressure ( BP ) control on thromboembolism and major hemorrhage in patients with nonvalvular atrial fibrillation, a post hoc analysis of the J‐ RHYTHM Registry was performed. Methods and Results A consecutive series of outpatients with atrial fibrillation was enrolled from 158 institutions. Of 7937 patients, 7406 with nonvalvular atrial fibrillation (70.8% men, 69.8±10.0 years) were followed for 2 years or until an event occurred. Hypertension was defined as a systolic BP ≥140 mm Hg, a diastolic BP ≥90 mm Hg, a history of hypertension, and/or antihypertensive drug use. Hypertension was an independent risk factor for major hemorrhage (hazard ratio 1.52, 95% CI 1.05–2.21, P =0.027) but not for thromboembolism (hazard ratio 1.05, 95% CI 0.73–1.52, P =0.787). When patients were divided into quartiles according to their systolic BP at the time closest to the event or at the end of follow‐up (Q1, CI 1.75–4.74, P CI 1.02–2.53, P =0.041) after adjustment for components of CHA 2 DS 2 ‐ VAS c score, warfarin use, and antiplatelet use. A systolic BP of ≥136 mm Hg was an independent risk factor for thromboembolism and major hemorrhage. Conclusions BP control appears to be more important than a history of hypertension and baseline BP values at preventing thromboembolism and major hemorrhage in patients with nonvalvular atrial fibrillation. Clinical Trial Registration URL : http://www.umin.ac.jp/ctr . Unique identifier: UMIN 000001569.

Dielectric barrier discharge (DBD) treatment is one of the methods used to make carbon nanofibers stand up on substrates. Upright carbon nanofibers are used as field emission materials. We have used twisted carbon nanofibers (CNTws) as field emission materials and treated printed CNTws on substrates using DBD. In this report, we examine the effects of DBD conditions on the uprightness of the CNTws. The DBD experimental parameters were as follows: 1) N2/He gas mixture ratio, 2) pulse frequency, and 3) Pt coating on the CNTw surface. The lengths of upright CNTws from the substrate surface and from the surface of a printed CNTw dot were measured using scanning electron microscopy. N2 gas was shown to be crucial for generating streamer discharges and making the CNTw stand up on the substrate. As the pulse frequency increased, the lengths of the upright CNTws and their number density increased. This is explained by an increase in the number of streamers; the streamers move about over the substrate surface. Pt coating lowered the onset voltage for field emission from the CNTws although the number of upright CNTws was less than that without the Pt coating.

As a simple-shaped laminar flame that can simulate conventional two-staged combustion devices, a methane-air Smithells flame, which is a peculiar Bunsen flame whose outer diffusion flame is separated from the inner premixed flame, was studied experimentally and numerically with detailed kinetics. In particular, the flame structure and the NO{sub x} emission characteristics of the Smithells flame were compared with those of the ordinary Bunsen flame under the same conditions, and its NO{sub x} reduction mechanism was investigated in detail. It was found experimentally that the Smithells flames have about 40% less total NO{sub x} emission than Bunsen flames. The numerically simulated flame structures are in good agreement with those of the experimental results, and the reduction rate of NO{sub x} emission also agreed well. From the numerical results it was found that the reduction is mainly caused by the suppression of Zeldovich NO due to the temperature decrease of the outer flame, and to the absence of the active production of O radicals at the flame base that are inherently formed by an interaction between the outer flame and the inner flame in the case of Bunsen flame. A secondary cause of the reduction is a deoxidization process from NOmore » to N{sub 2} in the reduction atmosphere of the interconal regions of the Smithells flames, in which cooling by the outer tube wall promotes the conversion from NO to HNO in the reaction loop NO->HNO->NH->N->NO. (author)« less

Since a wheeled mobile robot is subject to nonholonomic constraints, the position and the configuration of the robot cannot be derived directly from only the rotation angle of its wheels. In other words, the position and the configuration of a mobile robot cannot be calculated correctly if its wheels skid. For the purpose of the position estimation of a mobile robot, some external sensors are used, in general. This paper uses position information from a position-sensitive detector camera that is a high-speed visual sensor to correct the errors that are due to skid and so on. Also, we estimate a skid of wheels by using its visual information. In this paper, the authors propose a control system that enables control of both the configuration of the robot and the skid of wheels simultaneously by including these estimated values in the control loop of a mobile manipulator.

A new method is presented by which line spectrum noise can be cancelled, using the beat phenomenon. A reference magnetic field is superposed on the magnetic noise field in order to obtain a beat waveform, from which the phase and the amplitude of the magnetic noise can be identified. We applied the method to an open-structure, vertical cylindrical magnetic shield employing magnetic shaking, and evaluated the effect of canceling a line spectrum.

This paper is devoted to an electrochemical-etching-based technology for fabricating high-performance MODFETs for high-speed applications. The electrochemical etching in the gate openings is induced by the exposure of the Ni surface metal on the ohmic electrodes; it results in very slender gate-recess grooves, which are desirable for high-speed MODFETs because of the resulting achievable small gate-to-channel separation and low parasitic resistance. The technology is easy to implement, and is effective for enhancing the aspect ratio. Good control of aspect ratio is essential for achieving excellent device performance and limiting deleterious short channel effects. Successful vertical scaling, together with minimization of gate length by well-established electron-beam lithography using fullerene-incorporated electron-beam resist, leads to the realization of both optimal D- and E-mode MODFET's with ultrahigh extrinsic transconductance values and current gain cut-off frequencies. Fully passivated 0.07-/spl mu/m D-MODFET's with 2.25 S/mm extrinsic transconductance and current gain cut-off frequency exceeding 300 GHz have been successful fabricated. In addition, 0.03 /spl mu/m E-MODFETs with 2 S/mm transconductance and 300 GHz current gain cut-off frequency have been demonstrated. This electrochemical-etching-based technology provides both high-performance D- and E-MODFET's and, therefore, opens up the possibility to achieve ultrahigh-speed ICs based on DCFL configurations.

We report the realization of asymmetric recess etching in the fabrication of gate grooves for MODFETs based on InAlAs/InGaAs heterojunctions. The novel technology employs asymmetric electrochemical etching when the surface metal of Pt and Ni are deposited on the source and drain pads, respectively. Devices fabricated with this technology, though still immature, show similar DC performance to those fabricated by conventional technology for symmetric devices. Furthermore, due to the formation of a ‘step’ on the InP etch-stopper as a result of the asymmetric etching, the effective gate length of the devices has been made shorter than its nominal value. This, combined with the asymmetric groove profiles, produces higher f T and f max values than the usual symmetric devices.

Novel approach for making high-performance enhancement-mode InAlAs/InGaAs HEMT's (E-HEMT's) is described for the first time. Most important issue for the fabrication of E-HEMT's is the suppression of the parasitic resistance due to side-etching around the gate periphery during gate recess etching. Two-step recessed gate technology is utilized for this purpose. The first step of the gate recess etching removes cap layers wet-chemically down to an InP recess-stopping layer and the second step removes only the recess-stopping layer by Ar plasma etching. The parasitic component for source resistance is successfully reduced to less than 0.35 /spl Omega//spl middot/mm. Etching selectivities for both steps are sufficient not to degrade uniformity of devices on the wafer. The resulting structure achieves a positive threshold voltage of 49.0 mV with high transconductance. Due to the etching selectivity, the standard deviation of the threshold voltage is as small as 13.3 mV on a 3-in wafer. A cutoff frequency of 208 GHz is obtained for the 0.1-/spl mu/m gate E-HEMT's. This is therefore one of the promising devices for ultra-high-speed applications.

This paper describes the device, circuit design, and packaging technologies applicable to 40-Gb/s-class future lightwave communications systems. A 0.1-/spl mu/m gate InAlAs-InGaAs high electron mobility transistors (HEMTs) with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated ICs demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 10 Gb/s.

In this paper, oscillation modes of single jet, twin jet, and multijet with square configuration were investigated by using optical and acoustical observations. In the case of a single jet, axisymmetrical, helical, and lateral oscillation modes appeared with increasing pressure ratio of the jet. In the case of twin jets, two counter rotating helical oscillation modes and reversely lateral oscillation modes along a line through the center line of the two jets were observed for two different pressure ratios. In the case of multijets with square configuration, the quadrupolelike oscillation mode, four counter rotating helical oscillation modes, and a symmetrical oscillation mode were observed with increasing pressure ratio. The first and the last oscillation modes of the multijet with square configuration are unexpected based on observations for a single jet.

検出器{示差屈折計(RI)と紫外吸収検出器(UV)}と移動相{テトラヒドロフラン(THF)とクロロホルム}の種類の相違が平均分子量測定値にどのように影響を及ぼすかを検討した.検出器の問題については第1回及び第2回ラウンドロビンテストにおけるポリスチレン(PS)試料の平均分子量測定値を基に考察した.重量平均分子量MwはRIとUVで得られた値に差は認められなかったが,数平均分子量MnではUVで得られた値はRIで得られた値の74～88%であることが分かった.又,平均分子量の低いPS試料ほど,低下率も大きいことが分かった.RIとUVで得られた分子量分布を比較すると,低分子量領域でUVによる分子量分布が大きくなっており,このことがUVで得られたMnがRIで得られたMnより小さくなっている理由と考えられる.この原因として,セル構造などによるピーク広がりの問題や検出器応答係数の分子量依存性の程度の相違は否定でき,測定試料の末端構造がUVにおける応答係数の増大になんらかの影響を及ぼしているものと推定した.従って測定値,特にMnを相互比較する場合には検出器をRI又はUVいずれかに統一することが必要である.ポリメタクリル酸メチル(PMMA)試料において,クロロホルム移動相によって得られた平均分子量はMn,MwともにTHF移動相の場合より5～25%程度大きい値になっている.PS標準試料による較正曲線を用いてPMMAのような異種ポリマーの平均分子量を計算する場合,移動相の相違によって平均分子量が異なるので注意が必要である.PS標準試料による較正曲線を用いてPS試料の平均分子量を測定する場合には移動相の差は認められなかった.

We describe a distributed baseband amplifier using a new loss compensation technique for the drain artificial line. The new loss compensation circuit improves a high-frequency performance of the amplifier and makes the gain bandwidth product of the amplifier larger than that of conventional ones. We also use dc matching terminations and dumping resistors for the gate and drain artificial lines to obtain flat gain from frequencies as low as 0 Hz. One IC fabricated using 0.1 /spl mu/m-gatelength InAlAs/InGaAs/InP HEMTs has a gain of 16 dB over a 0-to-50 GHz band, resulting in a gain bandwidth product of about 300 GHz. Another IC has a gain of 10 dB over a 0-to-90 GHz band. These are the highest gain bandwidth product and the widest band reported for baseband amplifier ICs applicable to optical transmission systems.

Lubricants on a thin-film magnetic recording disk were analyzed by using TOF-SIMS. The lubricants used were Fomblin-AM2001, Fomblin-Z. DOL, Fomblin-Z, DEAL, Fomblin-Z. DIAC, Krytox-143AD, and Krytox-157FSH of perfluoropolyether.The main structures of Fomblin and Krytox were distinguished by a negative mass fragment pattern and a peak height ratio of m/z = 69 (CF3+) : m/z =119 (C2F5+). The end groups of Fomblin-AM2001, Fomblin-Z. DOL and Fornblin-Z. DIAC were detected by means of the fragment ions of the end groups. Damage to the lubricant film in the wearing region on the disk was then investigated by using TOF-SIMS. As a result, it was considered that the main structures were decomposed more than the end groups, when the head contacted the lubricant film.These results showed that the sensitivity and resolution of TOF-SIMS was higher than that of quadruple static SIMS. It was found that the TOF-SIMS measurement provides useful information on the durability of a thin-film magnetic recording disk.

Probucol was given to rats made diabetic by streptozotocin. Compared with diabetic rats not receiving probucol or with nondiabetic rats, probucol lowered the plasma concentrations of triglycerides, phospholipids, cholesterol, and apolipoprotein B. The concentrations of serum chylomicrons and very low density lipoprotein (VLDL) were also reduced. In control and diabetic rats, probucol enhanced the clearance of endogenously radiolabeled VLDL from the plasma. Clearances from the plasma of rat lymph chylomicrons or chylomicron-like lipid emulsions were slow in diabetic rats. Probucol normalized chylomicron clearance in diabetic rats primarily by restoring hepatic uptake of remnants, which was decreased in diabetes. In diabetic rats, uptake of chylomicron remnants was increased in a number of extrahepatic tissues, including the heart and kidney. Probucol significantly decreased uptake in some extrahepatic tissues. Increased plasma clearance of VLDL and chylomicrons was associated with an increase in the apolipoprotein CII/CIII and apolipoprotein E/C ratios. Orally administered probucol was specifically incorporated into lymph chylomicrons, and clearance of probucol from the plasma exactly paralleled the clearance of chylomicron remnants, as traced with radiolabeled cholesteryl esters. Chylomicron-like emulsions incorporating probucol were exclusively cleared from the plasma by the liver in normal rats. We conclude that in streptozotocin diabetic rats, probucol is an effective hypolipidemic agent because it promotes the clearance of the triglyceride-rich lipoproteins.

Experimental electron mean free paths were utilized to determine the thickness of the lubricant film on thin film magnetic recording media. Electron mean free paths were obtained by experiments which provided multipoint data on the C-F peak height ratio vs. the lubricant thickness. The thickness of the lubricant film on the thin film magnetic recording media was calculated from the diameter of the dripped lubricants solution measured by optical microscope, the lubricant density, and the concentration of the lubricant solution. The C-F peak height ratio as measured by XPS was then plotted against the thickness. The electron mean free path was determined from the approximate slope, which corresponds to an exponent. This experimental electron mean free path was compared with previously reported values. It is thought that the method used here is the best available for calculating the electron mean free path, from which the lubricant film thickness can be determined with a more specific value than using the published mean free path to compute the lubricant thickness.

This paper describes the design and performance of an 80-Gbit/s 2:1 selector-type multiplexer IC fabricated with InAlAs/InGaAs/InP HEMTs. By using a double-layer interconnection process with a low-dielectric insulator, microstrip lines were designed to make impedance-matched, high-speed intercell connection of critical signal paths. The record operating data rate was measured on a 3-in wafer. In spite of the bandwidth limitation on the measurement setup, clear eye patterns were successfully observed for the first time. The obtained circuit speed improvement from the previous result of 64 Gbit/s owes much to this high-speed interconnection design.

Dietary oxysterols can reach the circulation and this may contribute to atherosclerosis, where lipid oxidation is thought to be important. There is also evidence that, in rats, peroxidized lipids are absorbed and transported into lymph [Aw TY, Williams MW, Gray L. Absorption and lymphatic transport of peroxidized lipids by rat small intestine in vivo: role of mucosal GSH. Am J Physiol 1992; 262: G99-G106], although the method used to detect lipid peroxides lacked specificity. We tested whether intragastric administration of vegetable oils containing triglyceride hydroperoxides (TG-OOH) to rats resulted in detectable lipid hydroperoxides in mesenteric lymph. Using sensitive HPLC with postcolumn chemiluminescence detection, we were unable to detect hydroperoxides of triglycerides, cholesterylesters or phospholipids during the course of lipid absorption, and lymph levels of ascorbate, urate, alpha-tocopherol and ubiquinol-9 did not change significantly. By contrast, we observed a striking reducing activity judged by the efficient reduction of administered ubiquinones-9 and -10 to the corresponding ubiquinols. Exposure of rat lymph and isolated chylomicrons to aqueous peroxyl radicals revealed patterns of antioxidant consumption and lipid hydroperoxide formation similar to those described previously for human extravascular fluids and isolated lipoproteins, respectively. In particular, rates of TG-OOH formation in lymph and chylomicrons were very low to undetectable as long as ascorbate and/or ubiquinols were present, but subsequently proceeded in a chain reaction despite the presence of alpha-tocopherol. These studies demonstrate that rat intestine and mesenteric lymph possess efficient antioxidant defenses against preformed lipid hydroperoxides and (peroxyl) radical mediated lipid oxidation. We conclude that dietary lipid hydroperoxides or postprandial oxidation of lipids are not likely to contribute to these particular forms of oxidized lipids in circulation and aortic tissue.

A series-connected voltage-balancing pulse driver employing direct-coupled current switch architecture with a high-driving-capability input buffer and 0.1 /spl mu/m InP HEMTs is presented. By connecting two HEMTs in series the driver can output 3.6 V/sub pp/ voltage swing. With the input buffer, the -3 dB limiting bandwidth of the driver increases from 11 to 30 GHz, and the rise and fall times decrease from 33 to 16 and from 37 to 16 ps, respectively. These short rise and fall times enable the driver to output clear 10 Gbit/s eye opening.

An InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC that uses a new loss compensation technique for the drain artificial line is described. The amplifier IC has a gain of 10 dB with a 0-90 GHz bandwidth. This is the widest bandwidth among all reported baseband ICs to date.< >

A series-connected voltage-balancing circuit can output more than twice the voltage amplitude that can be output by a single transistor. This circuit makes it possible to apply high-speed low-breakdown-voltage transistors to large-voltage-amplitude pulse drivers. The first operation of this type of driver at 10 Gbit/s is reported.

An optoelectronic integrated circuit (OEIC) receiver with a measured sensitivity of -27.5 dBm for a 40 Gbit/s return-to-zero optical signal is described. The results indicate the potential of current in high-speed optical communication systems.

1.2 Tbit/s (30/spl times/42.7 Gbit/s ETDM channel) WDM transmission over three 125 km spans (span loss: 31.5 dB average) has been demonstrated, based on the use of the carrier-suppressed return-to-zero format and forward error correction in a 50 nm tellurite-based EDFA gain band.

It is shown that the threshold-voltage uniformity of 0.1 µm InAlAs/InGaAs-based modulation-doped field-effect transistors with different numbers of gate fingers and different gate widths can be improved when a thin cap-layer structure is employed. This improvement is based on the reduction of the recess time. This reduction suppresses the difference in etching that results from the different etching rates caused by the different electrochemical effects that occur because of the varied gate layouts.

The authors report a 2–46.5 GHz quasi-static frequency divider IC using InAlAs/InGaAs/InP HEMTs. Wideband clock/data buffers and an HLO (high-speed latching operation)-type T-FF were incorporated to enhance the operating range. The IC was mounted on a dedicated IC package and operated up to 45.2 GHz.

A 40 Gbit/s, fully-integrated 1:2 demultiplexer IC using InAlAs/InGaAs/InP HEMTs is reported. The IC integrates the full functionality for 40 Gbit/s data and 40 GHz regenerated clock inputs, including output bit alignment.

The authors report 46 Gbit/s 2:1 multiplexer and 40 Gbit/s 1:2 demultiplexer IC modules using InAlAs/InGaAs/InP HEMTs. Each chip is mounted on a dedicated broadband chip-size cavity package. These modules are the first to provide an error-free 40 Gbit/s multiplex/demultiplex operation.

The authors examine the high-frequency performance of a sub-0.1 mu m gate InAlAs/InGaAs HEMT with a thin InAs layer inserted into the InGaAs channel. The transconductance is 2.1 S/mm and the current-gain cutoff frequency is 264 GHz using a 0.08 mu m-long gate.

In conscious rats with near-malignant phases of DOCA-salt (DS) hypertension, hemodynamics were studied with microspheres before and after administration of a vasopressin (VP) vasopressor antagonist in relation to plasma VP levels (pVP). Compared to the controls, the DS rats showed significant elevations in mean arterial pressure (MAP), total vascular resistance (TVR), and pVP, and a flow redistribution from kidney and spleen to skeletal muscles and heart, with increased vascular resistance in almost all organs. The antagonist elicited no significant systemic hemodynamic effects in DS rats as a whole; however, two subgroups, responders vs nonresponders, were identified according to the effects on MAP. In responders with a pVP of 29.2 +/- 2.7 (SE) pg/ml, the antagonist lowered MAP (-24.9 +/- 5.9 mm Hg) and TVR significantly, while in nonresponders with a pVP of 15.2 +/- 3.4 pg/ml, there were no effects. The major antagonist-induced regional responses were increased flow and decreased vascular resistance in skeletal muscles and skin in whole DS rats, and additionally in the gastrointestinal tract, portal organs, and testes in the responders. Significant correlations were observed between pVP, MAP, TVR, and depressor responses to the antagonist only when all data for DS and control rats were pooled. Thus, the systemic hemodynamic effects of VP are important only in responders with exceedingly elevated pVP. VP contributes significantly to the regional hemodynamic abnormalities in skeletal muscles and skin in whole DS rats, and also in several other organs in the responders.

The mechanical behavior and fracture mechanisms of SHCC member failed in diagonal shear were evaluated both experimentally and analytically. Ultra High Performance Strain Hardening Cementitious Composite (UHP-SHCC) was applied as structural material. In the analysis, shear transfer model for SHCC was proposed based on its characteristics of cracking, that is, multiple fine cracking during strain hardening region and localization in one crack during strain softening region. As results, it was confirmed that proposed model was suitable for the mechanisms of shear transfer of SHCC and reasonable to predict the behavior of SHCC beam failed in diagonal shear.

We describe a "sandwich-type" enzyme immunoassay for insulin in serum, in which antibody Fab'-beta-D-galactosidase conjugate and an antibody-immobilized silicone rubber solid-phase are used. The interference by serum factors with the solid-phase enzyme immunoassay can now be removed by using a buffer containing gelatin. Serum samples of 50 microL can be analyzed by the enzyme immunoassay, which is as sensitive as radioimmunoassay for human insulin. Our results correlate well with those for radioimmunoassay (r = 0.97, slope = 0.92, y-intercept = 4.6 milli-int. units /L for 181 samples). Between-assay and within-assay coefficients of variation are less than 15% over the useful ranges of the assay (5--160 milli-int. units/L).