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0–90 GHz InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC

Authors :
Y. Umeda
Shunji Kimura
Takatomo Enoki
Y. Imai
Source :
Electronics Letters. 31:1430-1431
Publication Year :
1995
Publisher :
Institution of Engineering and Technology (IET), 1995.

Abstract

An InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC that uses a new loss compensation technique for the drain artificial line is described. The amplifier IC has a gain of 10 dB with a 0-90 GHz bandwidth. This is the widest bandwidth among all reported baseband ICs to date.< >

Subjects

Subjects :
Materials science
business.industry
Amplifier
Bandwidth (signal processing)
Electrical engineering
Distributed amplifier
High-electron-mobility transistor
Gallium arsenide
chemistry.chemical_compound
chemistry
Mmic amplifiers
Baseband
Wideband amplifiers
Electrical and Electronic Engineering
business

Details

ISSN :
1350911X and 00135194
Volume :
31
Database :
OpenAIRE
Journal :
Electronics Letters
Accession number :
edsair.doi...........df3bd02ac75ad2b230fd450340ebbbef

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