Search

Atomically dispersed catalysts such as single-atom catalysts have been shown to be effective in selectively oxidizing methane, promising a direct synthetic route to value-added oxygenates such as acetic acid or methanol. However, an important challenge of this approach has been that the loading of active sites by single-atom catalysts is low, leading to a low overall yield of the products. Here, we report an approach that can address this issue. It utilizes a metal-organic framework built with porphyrin as the linker, which provides high concentrations of binding sites to support atomically dispersed rhodium. It is shown that up to 5 wt% rhodium loading can be achieved with excellent dispersity. When used for acetic acid synthesis by methane oxidation, a new benchmark performance of 23.62 mmol·gcat-1·h-1 was measured. Furthermore, the catalyst exhibits a unique sensitivity to light, producing acetic acid (under illumination, up to 66.4% selectivity) or methanol (in the dark, up to 65.0% selectivity) under otherwise identical reaction conditions.

Spatially resolved vibrational mapping of nanostructures is indispensable to the development and understanding of thermal nanodevices1, modulation of thermal transport2 and novel nanostructured thermoelectric materials3–5. Through the engineering of complex structures, such as alloys, nanostructures and superlattice interfaces, one can significantly alter the propagation of phonons and suppress material thermal conductivity while maintaining electrical conductivity2. There have been no correlative experiments that spatially track the modulation of phonon properties in and around nanostructures due to spatial resolution limitations of conventional optical phonon detection techniques. Here we demonstrate two-dimensional spatial mapping of phonons in a single silicon–germanium (SiGe) quantum dot (QD) using monochromated electron energy loss spectroscopy in the transmission electron microscope. Tracking the variation of the Si optical mode in and around the QD, we observe the nanoscale modification of the composition-induced red shift. We observe non-equilibrium phonons that only exist near the interface and, furthermore, develop a novel technique to differentially map phonon momenta, providing direct evidence that the interplay between diffuse and specular reflection largely depends on the detailed atomistic structure: a major advancement in the field. Our work unveils the non-equilibrium phonon dynamics at nanoscale interfaces and can be used to study actual nanodevices and aid in the understanding of heat dissipation near nanoscale hotspots, which is crucial for future high-performance nanoelectronics.

Two-dimensional electron gas or hole gas (2DEG or 2DHG) and their functionalities at artificial heterostructure interfaces have attracted extensive attention in recent years. Many theoretical calculations and recent experimental studies have shown the formation of alternating 2DEG and 2DHG at ferroelectric/insulator interfaces, such as BiFeO3/TbScO3, depending on the different polarization states. However, a direct observation based on the local charge distribution at the BiFeO3/TbScO3 interface has yet to be explored. Herein we demonstrate the direct observation of 2DHG and 2DEG at BiFeO3/TbScO3 interface using four-dimensional scanning transmission electron microscopy and Bader charge analysis. The results show that the measured charge state of each Fe/O columns at the interface undergoes a significant increase/reduction for the polarization state pointing away/toward the interface, indicating the existence of 2DHG/2DEG. This method opens up a path of directly observing charge at atomic scale and provides new insights into the design of future electronic nanodevices.

Electrocatalytic reduction of waste nitrates (NO3-) enables the synthesis of ammonia (NH3) in a carbon neutral and decentralized manner. Atomically dispersed metal-nitrogen-carbon (M-N-C) catalysts with varying metal centers uniquely favor mono-nitrogen products (e.g., NH3), as well as provide synergistic supports for nanoparticle catalysts. But the reaction fundamentals remain largely underexplored. Herein, we report a set of 3d-, 4d-, 5d- and f-block atomically dispersed M-N-C catalysts with a well-defined M-Nx coordination. The selectivity and activity of NO3- reduction to NH3 in neutral media were thoroughly studied, with a specific focus on deciphering the role of the NO2- intermediate in the reaction cascade, wherein strong correlations (R=0.9) were found between the NO2- reduction activity and NO3- reduction selectivity for NH3. Moreover, theoretical computations identified the associative/dissociative adsorption pathways for NO2- evolution, over the normal M-N4 sites and their oxo-form (O-M-N4) for certain oxyphilic metals. The free energies for the reductive adsorption of nitrate [∗ + NO3− → ∗NO2 ], correlated strongly with experimental NH3 selectivity. This work provides a platform for designing multielement NO3RR cascades with single-atom sites or their hybridization with extended catalytic surfaces.

Summary The scalable preparation of high-purity monolayers is essential for practically integrating two-dimensional (2D) semiconductors in diverse technologies but remains a persistent challenge. Previous efforts to exfoliate 2D layered crystals by the organic ammonium intercalation usually produce few-layer nanosheets owing to a self-retarding effect that hinders the complete intercalation in neighboring layers. Herein, we report a unique “intercalation and separation” chemistry with a constant self-refreshing crystal surface that mitigates the self-retarding effect to ensure a complete intercalation of the bulk crystal, ultimately enabling high-yield solution-phase exfoliation of 2D semiconductor monolayers in excellent purity (e.g., monolayer purity of >95% for In2Se3 and InSe). Furthermore, we have assembled large-area organic/inorganic hybrid superlattices with diverse organic molecules and inorganic 2D monolayer crystals, thus creating a family of artificial superlattice materials with atomically modulated chemical compositions, widely tunable superlattice periodicities, and specifically tailorable electronic and thermal properties.

Crystal defects affect the thermal and heat-transport properties of materials by scattering phonons and modifying phonon spectra1–8. To appreciate how imperfections in solids influence thermal conductivity and diffusivity, it is thus essential to understand phonon–defect interactions. Sophisticated theories are available to explore such interactions, but experimental validation is limited because most phonon-detecting spectroscopic methods do not reach the high spatial resolution needed to resolve local vibrational spectra near individual defects. Here we demonstrate that space- and angle-resolved vibrational spectroscopy in a transmission electron microscope makes it possible to map the vibrational spectra of individual crystal defects. We detect a red shift of several millielectronvolts in the energy of acoustic vibration modes near a single stacking fault in cubic silicon carbide, together with substantial changes in their intensity, and find that these changes are confined to within a few nanometres of the stacking fault. These observations illustrate that the capabilities of a state-of-the-art transmission electron microscope open the door to the direct mapping of phonon propagation around defects, which is expected to provide useful guidance for engineering the thermal properties of materials. State-of-the-art electron energy-loss spectroscopy in a transmission electron microscope maps the detailed phonon spectra of single defects in silicon carbide

Topological domains in ferroelectrics have received much attention recently owing to their novel functionalities and potential applications in electronic devices. So far, however, such topological polar structures have been observed only in superlattices grown on oxide substrates, which limits their applications in silicon-based electronics. Here we report the realization of room-temperature skyrmion-like polar nanodomains in lead titanate/strontium titanate bilayers transferred onto silicon. Moreover, an external electric field can reversibly switch these nanodomains into the other type of polar texture, which substantially modifies their resistive behaviours. The polar-configuration-modulated resistance is ascribed to the distinct band bending and charge carrier distribution in the core of the two types of polar texture. The integration of high-density (more than 200 gigabits per square inch) switchable skyrmion-like polar nanodomains on silicon may enable non-volatile memory applications using topological polar structures in oxides.

Two-dimensional van der Waals heterostructures (vdWHs) have attracted considerable interest1–4. However, most vdWHs reported so far are created by an arduous micromechanical exfoliation and manual restacking process5, which—although versatile for proof-of-concept demonstrations6–16 and fundamental studies17–30—is clearly not scalable for practical technologies. Here we report a general synthetic strategy for two-dimensional vdWH arrays between metallic transition-metal dichalcogenides (m-TMDs) and semiconducting TMDs (s-TMDs). By selectively patterning nucleation sites on monolayer or bilayer s-TMDs, we precisely control the nucleation and growth of diverse m-TMDs with designable periodic arrangements and tunable lateral dimensions at the predesignated spatial locations, producing a series of vdWH arrays, including VSe2/WSe2, NiTe2/WSe2, CoTe2/WSe2, NbTe2/WSe2, VS2/WSe2, VSe2/MoS2 and VSe2/WS2. Systematic scanning transmission electron microscopy studies reveal nearly ideal vdW interfaces with widely tunable moire superlattices. With the atomically clean vdW interface, we further show that the m-TMDs function as highly reliable synthetic vdW contacts for the underlying WSe2 with excellent device performance and yield, delivering a high ON-current density of up to 900 microamperes per micrometre in bilayer WSe2 transistors. This general synthesis of diverse two-dimensional vdWH arrays provides a versatile material platform for exploring exotic physics and promises a scalable pathway to high-performance devices. A general strategy for the synthesis of two-dimensional van der Waals heterostructure arrays is used to produce high-performance electronic devices, showing the potential of this scalable approach for practical technologies.

La2Ti1.96V0.04O7 (LTVO) ceramics with Ti4+ ions partially substituted by V5+ ions at B sites show excellent electrical properties. The dopant V5+ ions do not result in collapse of the cell layered structure, but they lead to the enhanced distortions of BO6 oxygen octahedrons. Impedance spectroscopy reveals that a certain number of defects are formed due to the substitution of Ti4+ ions by V5+ ions. Meanwhile, the concentration of oxygen vacancies is decreased compared to pure La2Ti2O7 (LTO) ceramics. The direct current resistivity of LTVO ceramics obtained from alternating current (AC) impedance fitting at 600°C is 1.3 × 106 Ω cm, which is more than five times of that of the pure LTO at the same temperature (2.2 × 105 Ω cm). The substitution of Ti4+ ions by V5+ ions greatly enhances the piezoelectric coefficient, d33 = 4.8 pC/N. Therefore, the doping of V5+ ions in the B sites of LTO ceramics should be a good choice for enhancing their piezoelectric properties and resistivity at high temperature regimes.

Catalysts consisting of atomically dispersed Pt (Ptiso) species on CeO2 supports have received recent interest due to their potential for efficient metal utilization in catalytic convertors. However, discrepancies exist between the behavior (reducibility, interaction strength with adsorbates) of high surface area Ptiso/CeO2 systems and of well-defined surface science and computational model systems, suggesting differences in Pt local coordination in the two classes of materials. Here, we reconcile these differences by demonstrating that high surface area Ptiso/CeO2 synthesized at low Pt loadings ( 0.1 weight % produce a distribution of sub-nanometer Pt structures, which are difficult to distinguish using common characterization techniques, and exhibit strong interactions with CO and weak resistance to sintering, even in 0.05 bar H2 at 50 °C-properties previously seen for high surface area materials. This work demonstrates that low metal loadings can be used to selectively populate the most thermodynamically stable adsorption sites on high surface area supports with atomically dispersed metals. Further, the site uniformity afforded by this synthetic approach is critical for the development of relationships between atomic scale local coordination and functional properties. Comparisons to recent studies of Ptiso/TiO2 suggest a general compromise between the stability of atomically dispersed metal catalysts and their ability to interact with and activate molecular species.

The distribution of charge density in materials dictates their chemical bonding, electronic transport, and optical and mechanical properties. Indirectly measuring the charge density of bulk materials is possible through X-ray or electron diffraction techniques by fitting their structure factors1-3, but only if the sample is perfectly homogeneous within the area illuminated by the beam. Meanwhile, scanning tunnelling microscopy and atomic force microscopy enable us to see chemical bonds, but only on the surface4-6. It remains a challenge to resolve charge density in nanostructures and functional materials with imperfect crystalline structures-such as those with defects, interfaces or boundaries at which new physics emerges. Here we describe the development of a real-space imaging technique that can directly map the local charge density of crystalline materials with sub-angstrom resolution, using scanning transmission electron microscopy alongside an angle-resolved pixellated fast-electron detector. Using this technique, we image the interfacial charge distribution and ferroelectric polarization in a SrTiO3/BiFeO3 heterojunction in four dimensions, and discover charge accumulation at the interface that is induced by the penetration of the polarization field of BiFeO3. We validate this finding through side-by-side comparison with density functional theory calculations. Our charge-density imaging method advances electron microscopy from detecting atoms to imaging electron distributions, providing a new way of studying local bonding in crystalline solids.

Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon properties of the materials making up the interface without explicitly considering the atomistic interfacial details, which are found critical to correctly describing thermal boundary conductance. Recent theoretical studies predicted the existence of localized phonon modes at the interface which can play an important role in understanding interfacial thermal transport. However, experimental validation is still lacking. Through a combination of Raman spectroscopy and high-energy-resolution electron energy-loss spectroscopy in a scanning transmission electron microscope, we report the experimental observation of localized interfacial phonon modes at ~12 THz at a high-quality epitaxial Si-Ge interface. These modes are further confirmed using molecular dynamics simulations with a high-fidelity neural network interatomic potential, which also yield thermal boundary conductance agreeing well with that measured in time-domain thermoreflectance experiments. Simulations find that the interfacial phonon modes have an obvious contribution to the total thermal boundary conductance. Our findings significantly contribute to the understanding of interfacial thermal transport physics and have impact on engineering thermal boundary conductance at interfaces in applications such as electronics thermal management and thermoelectric energy conversion., Conventional theories for interfacial thermal transport are derived from bulk phonon properties. Here, the authors report experimental observation of interfacial phonon modes localized at interfaces, changing how interfacial thermal transport should be understood.

The discovery of chiral-induced spin selectivity (CISS) opens up the possibility to manipulate spin orientation without external magnetic fields and enables new spintronic device designs