20 results on '"Xiang Shui Miao"'
Search Results
2. Study on Memristor-Based 3-D Convolutional Neural Network Adapting to Non-Ideal Effects
- Author
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Boyi Dong, Peixuan Li, Yaoyao Fu, Ting-Chang Chang, Yi Li, Xiang-Shui Miao, and Yuhui He
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Electrical and Electronic Engineering ,Electronic, Optical and Magnetic Materials - Published
- 2023
3. Recent Progress on Memristive Convolutional Neural Networks for Edge Intelligence
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Yi-Fan Qin, Han Bao, Feng Wang, Jia Chen, Yi Li, and Xiang-Shui Miao
- Subjects
convolutional neural network accelerators ,edge intelligence ,long short-term memory neural networks ,memristors ,quantization ,Computer engineering. Computer hardware ,TK7885-7895 ,Control engineering systems. Automatic machinery (General) ,TJ212-225 - Abstract
Recently, due to the development of big data and computer technology, artificial intelligence (AI) has received extensive attention and made great progress. Edge intelligence pushes the computing center of AI from the cloud to individual users, making AI closer to life, but at the same time puts forward higher requirements for the realization of hardware, especially for edge acceleration. Taking convolutional neural networks (CNNs) as an example, which show excellent problem‐solving capabilities in different fields of academia and industry, it still faces issues of enormous computing volume and complex mapping architecture. Based on the computing‐in‐memory property and parallel multiply accumulate (MAC) operations of the emerging nonvolatile memristor arrays, herein the recent research progress of the edge intelligence memristive convolution accelerator is summarized. Furthermore, aiming at improving memristive convolutional accelerators, two potential optimization schemes are also discussed: The compression methods represented by quantization show great potential for static image processing, and the combination of a CNN with a long short‐term memory (LSTM) neural network makes up for the CNN's shortcomings of dynamic target processing. Finally, the future challenges and opportunities of edge intelligence accelerators based on memristor arrays are also discussed.
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- 2020
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4. Resistive Switching Characteristics of HfO x -Based Memristor by Inserting GeTe Layer
- Author
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Hua-Nan Liang, Na Bai, Lan-Qing Zou, Hua-Jun Sun, Kan-Hao Xue, Wei-Ming Cheng, Hong Lu, and Xiang-Shui Miao
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Electrical and Electronic Engineering ,Electronic, Optical and Magnetic Materials - Published
- 2023
5. Memristive Fast-Canny Operation for Edge Detection
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Jing Tian, Hou-Ji Zhou, Han Bao, Jia Chen, Xiao-Di Huang, Jian-Cong Li, Ling Yang, Yi Li, and Xiang-Shui Miao
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Electrical and Electronic Engineering ,Electronic, Optical and Magnetic Materials - Published
- 2022
6. Oxygen migration around the filament region in HfOx memristors
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Ge-Qi Mao, Kan-Hao Xue, Ya-Qian Song, Wei Wu, Jun-Hui Yuan, Li-Heng Li, Huajun Sun, Shibing Long, and Xiang-Shui Miao
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Physics ,QC1-999 - Abstract
The exact composition and structure of conductive filaments in hafnia-based memristors are still not fully understood, but recent theoretical investigations reveal that hexagonal HfOx phases close to the h.c.p. Hf structure are probable filament candidates. In this work we list h.c.p. Hf, Hf6O, Hf3O and Hf2O as possible phases for the filament in hafnia memristors. Their differences in lattice parameters, electronic structures and O charge states are studied in details. Migration of O ions for both in-plane and out-of-plane directions in these phases is investigated using first-principles calculations. Both single-phase supercells and filament-in-dielectric models are used for migration barrier calculations, while the latter is proven to be more accurate for the c-direction. The migration of O ions is fastest in metal Hf, while slowest in Hf2O. The existence of O interstitials in Hf tends to hinder the transport of O.
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- 2019
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7. The Role of Arsenic in the Operation of Electrical Threshold Switches
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Renjie Wu, Rongchuan Gu, Tamihiro Gotoh, Zihao Zhao, Yuting Sun, Shujing Jia, Xiang Shui Miao, Min Zhu, Ming Xu, Stephen Elliott, and Zhitang Song
- Abstract
Arsenic is one of the most frequently used elements for doping conventional silicon-based semiconductors and particularly in emerging phase-change-memory (PCM) chips, yet the detailed functional mechanism as well as its experimental demonstration is still lacking in the latter in spite of its wide application. Here, we fabricate chalcogenide-based ovonic threshold switching (OTS) selectors, which are essential units for suppressing sneak currents in 3D PCM arrays, with various As concentrations. We discovered that incorporation of 20 at. % As brings a more than 100 ℃ increase in crystallization temperature, remarkably improving the switching repeatability and prolonging the device lifetime. These benefits arise from strengthened As-S bonds and sluggish atomic migration after As incorporation, as demonstrated by molecular-dynamics simulations. As a result, the addition of As reduces the leakage current by more than an order of magnitude and significantly suppresses the operational voltage drift, ultimately enabling a backend-of-the-line (BEOL)-compatible OTS selector with > 12 MA/cm2 on-current, >104 on/off ratio, ~ 10 ns speed, and a lifetime approaching 1010 cycles after 450 ℃ annealing. These performance enhancements can be explained by an As-induced increase of the band gap and of trap states, as determined by experimental photothermal deflection spectroscopy. Mechanistically, this is due to abundant defect states associated with Ge-Ge chains introduced by As-Ge and As-S bonds. These findings allow the use of precise control of the As concentration in OTS materials for improved-performance high-density 3D PCM applications.
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- 2023
8. Pt/Al2O3/TaO X /Ta Self-Rectifying Memristor With Record-Low Operation Current (<2 pA), Low Power (fJ), and High Scalability
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Sheng-Guang Ren, Run Ni, Xiao-Di Huang, Yi Li, Kan-Hao Xue, and Xiang-Shui Miao
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Electrical and Electronic Engineering ,Electronic, Optical and Magnetic Materials - Published
- 2022
9. Color printing enabled by phase change materials on paper substrate
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Hong-Kai Ji, Hao Tong, Hang Qian, Nian Liu, Ming Xu, and Xiang-Shui Miao
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Physics ,QC1-999 - Abstract
We have coated phase change materials (PCMs) on rough and flexible substrates to achieve multicolor changeable devices. The principle of the device is based on an earlier discovery that lights have strong interference effect in PCM films, leading to various colors by reflection. In this work, paper substrates are laminated by parylene layers to protect the device from water before coated with functional PCM films. The PCM-based color printing (PCP) on paper is not affected by rough surfaces and shows a similar color appearance as that on smooth surfaces. In particular, the color-printed device can be patterned by UV lithography to display a clear and tunable optical image, and it exhibits a low sensitivity to the angle of view. Such PCP has potential applications for low-cost, disposable, and flexible displays.
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- 2017
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10. In-memory sparse matrix multiplication with a low-power self-rectifying memristor array
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Jiangcong Li, Shengguang Ren, Yi Li, Ling Yang, Yingjie Yu, Run Ni, Houji Zhou, Han Bao, Yuhui He, Jia Chen, Han Jia, and Xiang Shui Miao
- Abstract
Memristor-enabled in-memory computing provides an unconventional computing paradigm to surpass the energy efficiency of von Neumann computers. However, owing to the physical limitation of the crossbar structure, although the memristor array is desirable for dense computation, it suffers from significant performance degradation in both energy and area efficiency when processing sparse linear algebra operations. In this work, we report a highly efficient in-memory sparse computing system based on the self-rectifying memristor, which originates from the joint effort of devices and algorithms and is used to solve computational modelling problems. This system is expected to have 74.9 – 19.6 TOPS / W energy efficiency for 2-bit to 8-bit sparse computation in computational modelling tasks. Compared to the previous in-memory computing hardware, our system provides over one order of magnitude improvement in energy efficiency with more than two orders of magnitude reduction in hardware overhead. This work could pave the road towards a highly efficient, unconventional computing solution for high-performance computing.
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- 2022
11. Ultrafast synergistic excitation for in-situ computing
- Author
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Lei Ye, Lei Tong, Yali Bi, Yilun Wang, Xinyu Huang, Zhuiri Peng, Zheng Li, Langlang Xu, Runfeng Lin, Sihan Chen, WenHao Shi, Ming Tang, Hui Yu, Xinliang Zhang, Ping Wang, and Xiang Shui Miao
- Abstract
Nonlinear optical phenomena (NLOPs) in two-dimensional (2D) materials can be envisioned for neuromorphic functions at the device and related system level. But it has been attended rarely that transition among multi-energy states as one origin of NLOPs directly used for neuromorphic functions, which is assisted to understand nature of device-level nonlinear optical neuromorphic performance. Here we introduced a pump-probe-control technology to reveal multi-energy-state transition in multilayer molybdenum disulfide, enhancing nonlinear signals by transitions from two-photon absorption to synergistic excited states absorption and enabling an in-situ computing concept within an array of pure 2D flakes. Optical weighted average calculation and artificial neural network were realized without the fabrication of complex extrinsic structures, while preserving the femtosecond speed and femto-Joule power consumption, revealing the feasibility of pump-probe-control technology for nonlinear neuromorphic functions.
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- 2022
12. In-memory Search with Memristors for Highly Efficient Similarity-Measurement-Based Data Mining
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Yi Li, Ling Yang, Xiao-Di Huang, Houji Zhou, Yingjie Yu, Han Bao, Jiangcong Li, Shengguang Ren, Feng Wang, Lei Ye, Yuhui He, Jia Chen, Guiyou Pu, Xiang Li, and Xiang Shui Miao
- Abstract
Similarity search, that is, finding similar items in massive data, is a fundamental computing problem in many fields such as data mining, and information retrieval. However, for large-scale and high-dimension data, it suffers from high computational complexity, requiring tremendous computation resources. Here, based on the one-selector-one-resistor memristors, for the first time, we propose an in-memory search (IMS) system with two innovative designs. First, by exploiting the natural distribution law of the devices resistance, a hardware local sensitive hash encoder has been designed to transform the real-valued vectors into more efficient binary codes. Second, a compact memristive ternary content addressable memory is developed to calculate the Hamming distances between the binary codes in parallel. Our IMS system demonstrated a 168× energy efficiency improvement over all-transistors counterparts in clustering and classification tasks, while achieving a software-comparable accuracy, thus providing a low-complexity and low-power solution for in-memory data mining applications.
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- 2022
13. 2022 roadmap on neuromorphic devices and applications research in China
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Qing Wan, Changjin Wan, Huaqiang Wu, Yuchao Yang, Xiaohe Huang, Peng Zhou, Lin Chen, Tian-Yu Wang, Yi Li, Kan-Hao Xue, Yu-Hui He, Xiang-Shui Miao, Xi Li, Chenchen Xie, Houpeng Chen, Zhitang Song, Hong Wang, Yue Hao, Junyao Zhang, Jia Huang, Zheng Yu Ren, Li Qiang Zhu, Jianyu Du, Chen Ge, Yang Liu, Guanglong Ding, Ye Zhou, Su-Ting Han, Guosheng Wang, Xiao Yu, Bing Chen, Zhufei Chu, Lunyao Wang, Yinshui Xia, Chen Mu, Feng Lin, Chixiao Chen, Bojun Cheng, Yannan Xing, Weitao Zeng, Hong Chen, Lei Yu, Giacomo Indiveri, and Ning Qiao
- Subjects
General Medicine - Abstract
The data throughput in the von Neumann architecture-based computing system is limited by its separated processing and memory structure, and the mismatching speed between the two units. As a result, it is quite difficult to improve the energy efficiency in conventional computing system, especially for dealing with unstructured data. Meanwhile, artificial intelligence and robotics nowadays still behave poorly in autonomy, creativity, and sociality, which has been considered as the unimaginable computational requirement for sensorimotor skills. These two plights have urged the imitation and replication of the biological systems in terms of computing, sensing, and even motoring. Hence, the so-called neuromorphic system has drawn worldwide attention in recent decade, which is aimed at addressing the aforementioned needs from the mimicking of neural system. The recent developments on emerging memory devices, nanotechnologies, and materials science have provided an unprecedented opportunity for this aim.
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- 2022
14. Two-dimensional silicon chalcogenides with high carrier mobility for photocatalytic water splitting
- Author
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Jun-Hui Yuan, Xiaomin Cheng, Ming Xu, Xiang-Shui Miao, Sheng Wang, Yun-Lai Zhu, Kan-Hao Xue, and Ya-Qian Song
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Condensed Matter - Materials Science ,Electron mobility ,Materials science ,Silicon ,business.industry ,Band gap ,020502 materials ,Mechanical Engineering ,Materials Science (cond-mat.mtrl-sci) ,FOS: Physical sciences ,chemistry.chemical_element ,02 engineering and technology ,Semiconductor ,0205 materials engineering ,chemistry ,Mechanics of Materials ,Water splitting ,Optoelectronics ,General Materials Science ,Density functional theory ,business ,Absorption (electromagnetic radiation) ,Photocatalytic water splitting - Abstract
Highly-efficient water splitting based on solar energy is one of the most attractive research focuses in the energy field. Searching for more candidate photocatalysts that can work under visible-light irradiation are highly demanded. Herein, using first principle calculations based on density functional theory, we predict that the two dimensional silicon chalcogenides, i.e. SiX (X=S, Se, Te) monolayers, as semiconductors with 2.43 eV~3.00 eV band gaps, exhibit favorable band edge positions for photocatalytic water splitting. The optical adsorption spectra demonstrate that the SiX monolayers have pronounced optical absorption in the visible light region. Moreover, the band gaps and band edge positions of silicon chalcogenides monolayers can be tuned by applying biaxial strain or increasing the number of layers, in order to better fit the redox potentials of water. The combined novel electronic, high carrier mobility, and optical properties render the two dimensional SiX a promising photocatalyst for water splitting., 5 figures, 2 tables
- Published
- 2019
15. KTlO: a metal shrouded 2D semiconductor with high carrier mobility and tunable magnetism
- Author
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Xiang-Shui Miao, Jiafu Wang, Jun-Hui Yuan, Kan-Hao Xue, Ya-Qian Song, Li-Heng Li, and Ming Xu
- Subjects
Electron mobility ,Materials science ,Magnetism ,business.industry ,Band gap ,Doping ,02 engineering and technology ,Electronic structure ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,Semiconductor ,Monolayer ,Optoelectronics ,General Materials Science ,Direct and indirect band gaps ,0210 nano-technology ,business - Abstract
Two-dimensional materials with high carrier mobility and tunable magnetism are in high demand for nanoelectronic and spintronic applications. Herein, we predict a novel two-dimensional monolayer KTlO that possesses an indirect band gap of 2.25 eV (based on HSE06 calculations) and high carrier mobility (450 cm2 V-1 s-1 for electrons and 160 cm2 V-1 s-1 for holes) by means of ab initio calculations. The electron mobility can be increased up to 26 280 cm2 V-1 s-1 and 54 150 cm2 V-1 s-1 for bilayer and trilayer KTlO, respectively. The KTlO monolayer has a calculated cleavage energy of 0.56 J m-2, which suggests exfoliation of the bulk material as a viable means for the preparation of mono- and few-layer materials. Remarkably, the KTlO monolayer demonstrates tunable magnetism and half-metallicity with hole doping, which are attributed to the novel Mexican-hat-like bands and van Hove singularities in its electronic structure. Furthermore, monolayer KTlO exhibits moderate optical absorption over the visible light and ultraviolet regions. The band gap value and band characteristics of monolayer KTlO can be substantially manipulated by biaxial and uniaxial strains to meet the requirement of various applications. All these novel properties make monolayer KTlO a promising functional material for future nanoelectronic and spintronic applications.
- Published
- 2019
16. Filament-to-dielectric band alignments in $$\hbox {TiO}_{2}$$ TiO 2 and $$\hbox {HfO}_{2}$$ HfO 2 resistive RAMs
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Kan-Hao Xue, Xiang-Shui Miao, and Ze-Han Wu
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010302 applied physics ,Resistive touchscreen ,Materials science ,Band gap ,Schottky barrier ,02 engineering and technology ,Dielectric ,021001 nanoscience & nanotechnology ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Protein filament ,Crystallography ,Ab initio quantum chemistry methods ,Modeling and Simulation ,Resistive switching ,0103 physical sciences ,Electrical and Electronic Engineering ,0210 nano-technology ,Ohmic contact - Abstract
The next-generation nonvolatile memory storage may well be based on resistive random access memories (RRAMs). $$\hbox {TiO}_{2}$$ and $$\hbox {HfO}_{2}$$ have been widely used as the resistive switching layer for RRAM devices. However, the electronic properties of the filament-to-dielectric interfaces are still not well understood yet, compared to those of the electrodes and the dielectric. In this work, we study the electronic structures of three typical filament and dielectric structures, $$\hbox {Ti}_{4}\hbox {O}_{7}/\hbox {TiO}_{2}$$ , $$\hbox {Hf}_{2}\hbox {O}_{3}/\hbox {HfO}_{2}$$ and $$\hbox {Hf}/\hbox {HfO}_{2}$$ , using ab initio calculations. We implement the GGA-1/2 method, which rectifies the band gaps of GGA through self-energy correction. Our calculation predicts an ohmic contact for the $$\hbox {Ti}_{4}\hbox {O}_{7}/\hbox {TiO}_{2}$$ interface, where the defective $$\hbox {Ti}_{4}\hbox {O}_{7}$$ phase was experimentally identified as the filament composition in $$\hbox {TiO}_{2}$$ . However, there is a finite Schottky barrier existing in either $$\hbox {Hf}_{2}\hbox {O}_{3}/\hbox {HfO}_{2}$$ interface (1.96 eV) or $$\hbox {Hf}/\hbox {HfO}_{2}$$ interface (0.61 eV), the two probable filament–dielectric configurations in hafnia-based RRAM. Our results suggest that the distinct filament-to-dielectric band alignments in $$\hbox {TiO}_{x}$$ and $$\hbox {HfO}_{x}$$ systems account for the much larger resistance window for the latter.
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- 2017
17. Heteroepitaxial passivation of Cs
- Author
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Bo, Yang, Weicheng, Pan, Haodi, Wu, Guangda, Niu, Jun-Hui, Yuan, Kan-Hao, Xue, Lixiao, Yin, Xinyuan, Du, Xiang-Shui, Miao, Xiaoquan, Yang, Qingguo, Xie, and Jiang, Tang
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Materials for devices ,Optics and photonics ,Electronic devices ,Article ,Materials science - Abstract
X-ray detectors are broadly utilized in medical imaging and product inspection. Halide perovskites recently demonstrate excellent performance for direct X-ray detection. However, ionic migration causes large noise and baseline drift, limiting the detection and imaging performance. Here we largely eliminate the ionic migration in cesium silver bismuth bromide (Cs2AgBiBr6) polycrystalline wafers by introducing bismuth oxybromide (BiOBr) as heteroepitaxial passivation layers. Good lattice match between BiOBr and Cs2AgBiBr6 enables complete defect passivation and suppressed ionic migration. The detector hence achieves outstanding balanced performance with a signal drifting one order of magnitude lower than all previous studies, low noise (1/f noise free), a high sensitivity of 250 µC Gy air−1 cm–2, and a spatial resolution of 4.9 lp mm−1. The wafer area could be easily scaled up by the isostatic-pressing method, together with the heteroepitaxial passivation, strengthens the competitiveness of Cs2AgBiBr6-based X-ray detectors as next-generation X-ray imaging flat panels., Ionic migration degrades not only the characteristics of halide perovskite solar cells, but also those of perovskite X-ray detectors. Here Yang et al. employ heteroepitaxial BiOBr to passivate Cs2AgBiBr6 double perovskite, which suppresses ionic migration and obtain high performance X-ray detectors.
- Published
- 2018
18. Observation of carrier localization in cubic crystalline Ge
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Hang, Qian, Hao, Tong, Ming-Ze, He, Hong-Kai, Ji, Ling-Jun, Zhou, Ming, Xu, and Xiang-Shui, Miao
- Subjects
sense organs ,Article - Abstract
The tunable disorder of vacancies upon annealing is an important character of crystalline phase-change material Ge2Sb2Te5 (GST). A variety of resistance states caused by different degrees of disorder can lead to the development of multilevel memory devices, which could bring a revolution to the memory industry by significantly increasing the storage density and inspiring the neuromorphic computing. This work focuses on the study of disorder-induced carrier localization which could result in multiple resistance levels of crystalline GST. To analyze the effect of carrier localization on multiple resistant levels, the intrinsic field effect (the change in surface conductance with an applied transverse electric field) of crystalline GST was measured, in which GST films were annealed at different temperatures. The field effect measurement is an important complement to conventional transport measurement techniques. The field effect mobility was acquired and showed temperature activation, a hallmark of carrier localization. Based on the relationship between field effect mobility and annealing temperature, we demonstrate that the annealing shifts the mobility edge towards the valence-band edge, delocalizing more carriers. The insight of carrier transport in multilevel crystalline states is of fundamental relevance for the development of multilevel phase change data storage.
- Published
- 2017
19. Identification of Vacancy Ratio in Crystalline GeTe Films
- Author
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Fei Tong and Xiang Shui Miao
- Subjects
SQUID ,X-ray spectroscopy ,Crystallography ,Materials science ,chemistry ,X-ray photoelectron spectroscopy ,law ,Magnetism ,Vacancy defect ,chemistry.chemical_element ,Germanium ,law.invention - Abstract
XRD, XPS, SQUID and magnetism calculation based on spin-polarized DFT of GeTe crystalline films with different Co-doping have been studied to identify the vacancies in GeTe. The results show that Co occupies Ge vacancy and forms Co-Te bond, and confirm 8% vacancy ratio in GeTe.
- Published
- 2011
20. GGA-1/2 self-energy correction for accurate band structure calculations: the case of resistive switching oxides.
- Author
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Jun-Hui Yuan, Qi Chen, Leonardo R C Fonseca, Ming Xu, Kan-Hao Xue, and Xiang-Shui Miao
- Published
- 2018
- Full Text
- View/download PDF
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