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1. The Cluster Plant For Individual Wafer Processing Must Be Able To Coat 300 Mm Silicon Wafers With Silicon Oxide And Silicon Nitride By Means Of Plasma-assisted Gas Phase Deposition (pecvd) And Low-k Dielectric With Pecvd

Subjects
Silicon -- Electric properties, Semiconductor wafers -- Electric properties, Semiconductor production equipment -- Electric properties, Nitrides -- Electric properties, Silicon compounds -- Electric properties, Chemical vapor deposition -- Electric properties, Semiconductor production equipment, Business, international
Abstract

Prior information notice without call for competition: The cluster plant for individual wafer processing must be able to coat 300 mm silicon wafers with silicon oxide and silicon nitride by [...]

Published
2017

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