The Cluster Plant For Individual Wafer Processing Must Be Able To Coat 300 Mm Silicon Wafers With Silicon Oxide And Silicon Nitride By Means Of Plasma-assisted Gas Phase Deposition (pecvd) And Low-k Dielectric With Pecvd

Source :: Mena Report. March 12, 2017
Publication Year :: 2017
Abstract: Prior information notice without call for competition: The cluster plant for individual wafer processing must be able to coat 300 mm silicon wafers with silicon oxide and silicon nitride by [...]

Subjects :: Silicon -- Electric properties
Semiconductor wafers -- Electric properties
Semiconductor production equipment -- Electric properties
Nitrides -- Electric properties
Silicon compounds -- Electric properties
Chemical vapor deposition -- Electric properties
Semiconductor production equipment
Business, international

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