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This paper reports, the enhanced electrical parameters of sub-10 nm High-k SOI GaN FinFET by implementing fin optimization approach using TCAD simulation. The results show that as the fin aspect ratio (AR) increases, keeping the channel cross-sectional area constant, the static and analog performance of the suggested device enhances. On current of 0.15 mA, higher switching ratio (ION/IOFF) ratio (1.74 × 109), reduced subthreshold swing (by 20%), and higher intrinsic gain has achieved for High-k SOI GaN FinFET having a higher fin AR (3.75) as compared to the lower fin aspect ratio (1.67) owing to the significant reduction in short channel effects. For more insight into the static/analog performances of the device; some other parameters such as transconductance (gm), energy band profile, surface potential, output conductance (gd), output resistance (Ro), and early voltage have also been investigated under fin optimization approach (fin aspect ratio modulation). Thus, the enhanced static/analog performances of the High-k SOI GaN FinFET clear the way for RFIC design. [ABSTRACT FROM AUTHOR]

The field of experimental microsurgery was pioneered by the great microsurgeon Sun Lee, who developed the foundation of transplant surgery in the clinic. Dr Lee also played a seminal role in introducing microsurgery to establish mouse models of cancer. In 1990, at the age of 70, Dr Lee demonstrated microsurgery techniques to the mouse-model team at AntiCancer Inc., leading to the development of the surgical orthotopic implant (SOI) technique and the first orthotopic mouse models of cancer that metastasized in a pattern similar to clinical cancer. At the beginning of the present century, one of us (NY) from Kanazawa University School of Medicine became a visiting scientist at AntiCancer to learn SOI and develop mouse models of cancer using cancer cells expressing fluorescent reporter genes, such as green fluorescent protein (GFP) and red fluorescent protein (RFP), in order to image metastatic cancer cells trafficking in real time. Since then, a total of eight young surgeons from Kanazawa University have been visiting researchers at AntiCancer, developing SOI mouse models of cancer to visualize cancer cells in vivo, tracking all stages of metastasis in real time. The present perspective review summarizes this seminal work, which has revolutionized the field of metastasis research. [ABSTRACT FROM AUTHOR]

The Southern Ocean, its ecosystem, and inhabitants are vulnerable to climate‐mediated shifts in habitat conditions. These changes can affect marine predators in the long term through changes in the distribution, density, and quality of prey. To understand how these changes affect vital rates requires longitudinal studies integrating demography and environmental states. We analyzed 22 years of capture–mark–recapture data to quantify the influence of broad‐scale climate on the survival of male southern elephant seals from Macquarie Island, Tasmania, Australia. Weaning mass was incorporated as a quadratic predictor of survival to account for the known influence of maternal investment. First‐year survival was greatest for weaners weighing 160 kg. Subsequent developmental stages were grouped into juvenile, subordinate, and breeding adult states to reflect the known life history of individuals. We found increased juvenile and subordinate survival with positive values of the previous years' Southern Annular Mode. This is likely due to the northward shift of westerly winds increasing productivity and prey availability in the Sub‐Antarctic region. In contrast to females of this population, the Southern Oscillation Index did not affect male survival. In this highly polygynous mating system, sex‐dependent differences in foraging behavior may be causing the small number of successful breeding adult males to be less susceptible to external influences after reaching the minimum age and body size required to be socially competitive for mating. These extremely large bulls will breed with multiple females and thus make a disproportionate contribution to the gene pool of the next generation. Considering the susceptibility of males to climate influences is therefore highly relevant to assessing the future adaptive capability of the species. [ABSTRACT FROM AUTHOR]

We designed a narrow-linewidth external-cavity hybrid laser leveraging a silicon-on-insulator triple Euler gradient resonant ring. The laser's outer cavity incorporates a compact, high-Q resonant ring with low loss. The straight waveguide part of the resonant ring adopts a width of 1.6 μm to ensure low loss transmission. The curved section is designed as an Euler gradient curved waveguide, which is beneficial for low loss and stable single-mode transmission. The design features an effective bending radius of only 26.35 μm, which significantly improves the compactness of the resonant ring and, in turn, reduces the overall footprint of the outer cavity chip. To bolster the laser power and cater to the varying shapes of semiconductor optical amplifier (SOA) spots, we designed a multi-tip edge coupler. Theoretical analysis indicates that this edge coupler can achieve an optical coupling efficiency of 85%. It also reveals that the edge coupler provides 3 dB vertical and horizontal alignment tolerances of 0.76 μm and 2.4 μm, respectively, for a spot with a beam waist radius of 1.98 μm × 0.99 μm. The outer cavity, designed with an Euler gradient micro-ring, can achieve a side-mode suppression ratio (SMSR) of 30 dB within a tuning range of 100 nm, with a round-trip loss of the entire cavity at 1.12 dB, and an expected theoretical laser linewidth of 300 Hz. [ABSTRACT FROM AUTHOR]

La notion d’identité narrative place la possibilité de l’identité à soi (ou identité-idem) avec celle du changement. Mais a-t-on besoin d’une médiation « dialectique », comme la désigne Ricœur, entre identité et changement ? Seulement si l’identité est supposée exclure le changement. Or, tel n’est pas le cas de l’identité au sens le plus fondamental du terme, l’identité numérique. La seconde difficulté tient à ce que Ricœur paraît souvent rabattre l’une sur l’autre les notions d’histoire et de narration. Nous sommes des êtres historiques, cela n’est guère discutable, mais est-ce à dire que notre identité dépend de la narration que nous faisons de notre histoire ? Enfin, la troisième aporie réside dans la place primordiale accordée par Ricœur à la fiction dans sa détermination de l’identité narrative. Or il n’est pas du tout évident que les personnages de fiction jouissent d’une identité véritable en un quelconque sens. Des théoriciens contemporains de la référence, tels Saul Kripke ou David Kaplan, ont au contraire insisté sur le fait que les personnages romanesques ne possédaient qu’une apparence d’identité. Comment dès lors faire de ce semblant d’identité, qui se réduit à un faisceau de caractéristiques plus ou moins stables, le modèle pour penser nos identités réelles.

This work showcases the implementation of 16 Boolean logic functions through a double-gate (DG) fully depleted (FD) Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET). The DG-FD-SOI device with an independent gate operation highlights that Boolean logic functions can be implemented in two steps (Program and Read), and Boolean logic output “High” (“1”) and “Low” (“0”) depends on the floating body effect. The Program (Step 1) operation is based on band-to-band tunneling and forward bias mechanisms, while the Read (Step 2) operation is based on drift and impact ionization mechanism. The program and read operations for logic-in-memory computing are performed in ~10 ns and consume low energy ( $\sim 4.04\times 10 ^{-14}$ J) during the read operation. The results also show that the device with optimized device dimensions, biasing, and timing scheme achieves a drain current ratio of $\sim 10^{5}$ . These results reveal that DG-FD-SOI-based MOSFET for logic-in-memory computing is a compelling alternative to the limitations of von Neumann architectures, offering significant speed and energy efficiency advantages.

The EZ-FET is a device with simplified architecture and processing that enables fast electrical characterization of semiconductor films on insulators (SOI) with only two lithography levels and using regular process steps. For low temperature SOI substrates characterization, the EZ-FET must be processed at a low temperature, including the junctions formation, i.e., the dopant activation process. Two EZ-FET dopant activation approaches using nanosecond laser annealing at low thermal budget are presented in this work. The first is the classical process of partial source and drain amorphization followed by their recrystallization. The second is a simplified process consisting of full source and drain amorphization followed by recrystallization. Both approaches are evaluated through the analysis of the electrical behaviors of the resulting structures.

Grating couplers are essential components in silicon photonics that facilitate the coupling of light between waveguides and fibers. Optimization of the grating couplers to reach <1 dB loss when coupling to single-mode fibers (SMFs) has been reported in the literature, but this was based on silicon-on-insulator (SOI) waveguides supporting multi-modes. In this paper, using a deep-learning model combined with an inverse-design process, we achieve <1 dB losses for grating couplers implemented over single-mode SOI waveguides, i.e., a maximum efficiency of 80.5% (−0.94 dB) for gratings constrained with e-beam (EB) lithography critical dimension (CD), and a maximum efficiency of 77.9% (−1.09 dB) for gratings constrained with deep ultraviolet (DUV) lithography CD. To verify these results, we apply covariance matrix adaptation evolution strategy (CMA-ES) and find that while CMA-ES yields slightly better results, i.e., 82.7% (−0.83 dB) and 78.9% (−1.03 dB) considering e-beam and DUV, respectively, the spatial structures generated by CMA-ES are nearly identical to the spatial structures generated by the deep-learning model combined with the inverse-design process. This suggests that our approach can achieve a representative low-loss structure, and may be used to improve the performance of other types of nanophotonic devices in the future. [ABSTRACT FROM AUTHOR]

Based on S-parameter measurements, the effect of dynamic trapping and de-trapping of charge in the gate oxide, the increase of dielectric loss due to polarization, and the impact of leakage current on the small-signal input impedance at RF is analyzed and represented. This is achieved by systematically extracting the corresponding model parameters from single device measurements at different frequency ranges, and then the methodology is applied to analyze the evolution of these parameters when the device is submitted to non-conducting electrical stress. This approach not only allows to inspect the impact of effects not occurring under DC conditions, such as the current due to the time varying dielectric polarization, but also to clearly distinguish effects in accordance with the functional form of their contribution to the device's impedance. In fact, it is shown that minor changes in the model of the gate capacitance by including additional resistive and capacitive components allows for an excellent model-experiment correlation up to 30 GHz. Moreover, the accuracy of the correlation is shown to be maintained when applying the proposal to the device under different gate-to-source bias conditions and at several stages during off-state degradation. [ABSTRACT FROM AUTHOR]

Copyright of Ricoeur Studies / Etudes Ricoeuriennes is the property of University of Pittsburgh, University Library System and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Introduction. The characteristics of solid-state microwave switches are subject to different requirements depending on the application area and technical problems to be solved. No versatile solution exists that could satisfy all requirements at once. The desire to improve the parameters of switches has led to the emergence of devices based on various technologies. In order to elucidate the current trends and future prospects in the field of switch technologies, semiconductor devices that form the basis of switch circuits should be considered.Aim. To review transistor types used in solid-state switches.Materials and methods. The search and selection of literature sources for review was based on the chronological principle. The search depth for considering the parameters of finished components was no more than 10 years, for considering technologies and structural solutions – more than 10 years. This choice was explained by our desire to trace the history of development and approaches to the creation of semiconductor devices that have led to the emergence of the modern component base. The final array of sources comprised scientific publications presenting factual information on the objects under consideration.Results. The types, structures, materials, characteristics and manufacturing technologies of transistors used in switches are considered. The achievable parameters of the switches based on the considered devices are presented. Conclusion. The choice of a particular transistor type for switches depends on the requirements for the parameters and performance characteristics of the final device. At present, transistor solutions for switches are dominated by field-effect transistors (FETs) of various types: GaAs and GaN transistors with a high electron mobility (HEMT) and Si CMOS FETs implemented by standard as well as silicon-on-insulator and silicon-on-sapphire technologies. The conducted literature review has revealed prospects for the development of technologies based on BiCMOS heterojunction bipolar transistors.

This study proposes a simulation-based design for a Silicon-On-Insulator (SOI) ring resonator with a Figure of Merit (FOM) of 56.15 and a high sensitivity of up to 730 nm/RIU. The Finite-Difference Time-Domain (FDTD) technique was used to assess and evaluate the design quantitatively. Our design demonstrates higher sensitivity compared to many recent studies conducted on SOI-based sensors. The device structure follows a conventional ring resonator arrangement with a single waveguide, incorporating a 2D graphene layer on top of the SiO2 wafer and a gold nano-disc positioned at the center of the ring. Our findings highlight the device's susceptibility to refractive index variations, making it a desirable choice for various sensing applications. We have investigated the sensor's capabilities for sensing different concentrations of milkmilk. Graphene and gold materials enhance the device's response to light and provide comparatively higher sensitivity. The suggested design can serve as a blueprint for device fabrication, considering the practicality of implementing an SOI-based device using standard techniques for silicon processing.

Bangkok, the capital of Thailand, grapples with several urban challenges, including traffic accidents, congestion, and underdeveloped sidewalks. These issues stem from the escalating use of private cars and motorcycles driven by rapid urbanization, accompanying economic growth, and the unique street geometry of the city. Furthermore, despite the development of railroads, issues persist with the poor walking environment for pedestrian access to stations, posing a challenge to the promotion of safe and environmentally friendly public transportation. This study evaluated streets' spatial performance, focusing on the performance of soi, the intricate network of narrow urban pathways in Bangkok. Leveraging an AI model capturing pedestrian value, this study subsequently assessed accessibility from typical residential areas to public transportation stations. The findings shed light on the challenges faced by sois in Bangkok. Based on the findings, practical implications were discussed and provided to inform urban designers, with the aim of promoting public transportation usage and encouraging a more sustainable urban form. [ABSTRACT FROM AUTHOR]

A commercial thermo-optic phase shifter (TOPS) is an efficient solution to the imbalance problem in the fabrication process of Mach–Zehnder modulator (MZM) arms. The TOPS consumes electrical power and transforms it into thermal energy, which changes the real part of the effective refractive index at the waveguide and adjusts the MZM transfer function to work in the linear region. The common model being used today is constructed with only one heater; however, this solution requires more electrical power, which can increase the transmitter system cost. To reduce the system energy cost, we propose a pioneering optimal double titanium nitride heater model under forward biasing at 1550 nm wavelength using the standard silicon-on-insulator technology. Numerical investigations were carried out on the key relative geometrical parameters, heat distribution at the silicon layer, thermal crosstalk, and laser wavelength drift. Results show that the optimal TOPS design can function with a low electrical power of 19.1 mW to achieve a π-phase shift, with a low thermal crosstalk of 0.404 and very low optical losses over 1 mm length. Thus, the proposed device can be used for improving the imbalance problem in MZMs with low electrical power consumption and low losses. This functionality can be utilized to obtain better performances in transmitter systems for data centers and long-range optical communication system applications. [ABSTRACT FROM AUTHOR]

Many silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) are used in deep space detection systems because they have higher radiation resistance than bulk silicon devices. However, SOI devices have to face the double challenge of radiation and conventional reliability problems, such as hot carrier stress, at the same time. Thus, we wondered whether there is any interaction between reliability degradation and irradiation damage. In this paper, the effect of hot-carrier injection (HCI) on γ-ray-irradiated partially depleted (PD) SOI n-MOSFETs with a T-shaped gate structure is investigated. A strange phenomenon that accelerated the annealing effect on irradiation devices caused by HCI in 5 s was observed. That is, HCI has fast recovery ability on the irradiated narrow-channel n-MOSFETs. We explain the physical mechanism of this recovery effect qualitatively. Moreover, we designed a comparable experiment to evaluate the effect on the wide-channel devices. These results show that the narrow-channel devices are more sensitive to irradiation and HCI effects than wide-channel devices. [ABSTRACT FROM AUTHOR]

Total ionizing dose (TID) irradiation impacts the device leakage currents or threshold voltage, which affects the single event transient (SET) vulnerability of electronics under radiation environment. SET response of SOI FinFET at 14 nm technology node after TID exposure is carried out at different dose level. Results show that the drain current peak presents a slight fluctuant with total dose, while the collected charge and the bipolar amplification coefficient first decrease with total dose and then increase. The potential reason is also discussed from competing mechanisms associated with decreasing threshold voltage from TID irradiation and increasing the drain diffuse current from the potential of the channel. [ABSTRACT FROM AUTHOR]

We designed a narrow-linewidth external-cavity hybrid laser leveraging a silicon-on-insulator triple Euler gradient resonant ring. The laser’s outer cavity incorporates a compact, high-Q resonant ring with low loss. The straight waveguide part of the resonant ring adopts a width of 1.6 μm to ensure low loss transmission. The curved section is designed as an Euler gradient curved waveguide, which is beneficial for low loss and stable single-mode transmission. The design features an effective bending radius of only 26.35 μm, which significantly improves the compactness of the resonant ring and, in turn, reduces the overall footprint of the outer cavity chip. To bolster the laser power and cater to the varying shapes of semiconductor optical amplifier (SOA) spots, we designed a multi-tip edge coupler. Theoretical analysis indicates that this edge coupler can achieve an optical coupling efficiency of 85%. It also reveals that the edge coupler provides 3 dB vertical and horizontal alignment tolerances of 0.76 μm and 2.4 μm, respectively, for a spot with a beam waist radius of 1.98 μm × 0.99 μm. The outer cavity, designed with an Euler gradient micro-ring, can achieve a side-mode suppression ratio (SMSR) of 30 dB within a tuning range of 100 nm, with a round-trip loss of the entire cavity at 1.12 dB, and an expected theoretical laser linewidth of 300 Hz.

This paper suggests an analysis of SOI-based GaN FinFET that considers high-k gate oxide into account. The effect of using SOI substrate and a high-k dielectric layer on ON current, OFF current, electric field, electron mobility, conduction & valence band energy, and subthreshold swing is reported. All these parameters are analyzed and compared with bulk GaN FinFET and Si FinFET. We achieve better ON current, faster speed, and more minor subthreshold swing, reducing the short channel effects. A shallow OFF current is obtained because of bulk conduction in the GaN channel area, which the gate can deplete. Several RF/analog metrics are also noted, including transconductance (gm), cut-off frequency (fT), transconductance frequency product (TFP), and transconductance generation factor (TGF), and comparison with Bulk GaN FinFET and Si FinFET is presented. Finally, the linearity metrics like 2nd and 3rd-order voltage intercept points, IIP3, and 1-dB compression point is extracted. Compared to the other two structures, the suggested structure exhibits advantageous DC and RF/analog performances. A comparison of different Figures of Merits (FoMs) for the suggested device with previously published literature is also given.

Copyright of Akofena is the property of Universite Felix Houphouet Boigny and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Silicon-on-insulator (SOI) wafers are crucial raw materials in the manufacturing process of microelectromechanical systems (MEMS). Residual stresses generated inside the wafers during the fabrication process can seriously affect the performance, reliability, and yield of MEMS devices. In this paper, a low-cost method based on mechanical modeling is proposed to characterize the residual stresses in SOI wafers in order to calculate the residual stress values based on the deformation of the beams. Based on this method, the residual strain of the MEMS beam, and thus the residual stress in the SOI wafer, were experimentally determined. The results were also compared with the residual stress results calculated from the deflection of the rotating beam to demonstrate the validity of the results obtained by this method. This method provides valuable theoretical reference and data support for the design and optimization of devices based on SOI-MEMS technology. It provides a lower-cost solution for the residual stress measurement technique, making it available for a wide range of applications. [ABSTRACT FROM AUTHOR]

The Standards of Identity (SOI) for food may prevent the adoption of the strategies that help sustain the development of some food industries. This study provides comprehensive insights into the possibility of regulation changes with SOI for orange juice from consumer perspectives. Results show that the juice blends with 50% orange juice and 50% tangerine juice received the highest sensory scores. However, most consumers do not think juice blends with less than 70% orange juice can be called orange juice. The WTP for juice blends with less than 70% orange juice also decreases significantly. The results provide strong support for modifying the current SOI for orange juice. In addition, the ratio of 70% orange juice and 30% non‐orange juice (tangerine/mandarin) is an appropriate threshold for starting the change to the SOI for orange juice. Successful modification to food SOI should consider its impact on both food quality and consumer perceptions. [ABSTRACT FROM AUTHOR]

The main objective of this work is to present an analysis of the performance of Ultra-Thin-Body and Buried Oxide transistors working as Ultra-Low-Power and standard-nMOS diodes. The implementation of different ground planes and substrate biases is analyzed. It is shown a reduced leakage current and increased ratio between the on and off-state currents for both systems with the nMOS devices’ substrate biased at −2 V. The standard-nMOS shows a reduced leakage current and increased ratio between the on and off-state currents with the substrate bias at −2 V and with a P-type ground plane implemented while the Ultra-Low-Power presents only a significative influence of the ground planes on the ratio between the on and off-state currents. The ground planes do not provoke a significant change in the leakage current, but a noticeable variation can be observed in the ratio between the on and off-state currents due to the higher threshold voltage in relation to the system without ground plane.

In this work, an experimental evaluation of Gate-Induce Drain Leakage (GIDL) current is presented for nanowire and nanosheet-based SOI transistors. The effects of fin width and temperature increase are studied. Obtained results indicate that the increase in device width makes the GIDL current more sensitive to temperature increase. Three-dimensional numerical simulations have shown that despite the reverse junction leakage increase with temperature, leakage current in nanosheet and nanowire transistors is composed predominantly of GIDL current. The change in valence and conduction bands caused by temperature increase favors the band-to-band tunneling, which is responsible for the worsening of GIDL at high temperatures.

An optical coupler is a key input/output (I/O) device in a photonic integrated circuit (PIC), which plays the role of light-source import and modulated light output. In this research, a vertical optical coupler consisting of a concave mirror and a half-cone edge taper was designed. We optimized the structure of mirror curvature and taper through finite-difference-time-domain (FDTD) and ZEMAX simulation to achieve mode matching between SMF (single-mode fiber) and the optical coupler. The device was fabricated via laser-direct-writing 3D lithography, dry etching and deposition on a 3.5 µm silicon-on-insulator (SOI) platform. The test results show that the overall loss of the coupler and its connected waveguide at 1550 nm was 1.11 dB in transverse-electric (TE) mode and 2.25 dB in transverse-magnetic (TM) mode. [ABSTRACT FROM AUTHOR]

Copyright of Estilos da Clínica is the property of FEUSP - Faculdade de Educacao da USP - Universidade de Sao Paulo and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Dopamine is a catecholamine neurotransmitter that plays a significant role in the human central nervous system, even at extremely low concentrations. Several studies have focused on rapid and accurate detection of dopamine levels using field-effect transistor (FET)-based sensors. However, conventional approaches have poor dopamine sensitivity with values <11 mV/log [DA]. Hence, it is necessary to increase the sensitivity of FET-based dopamine sensors. In the present study, we proposed a high-performance dopamine-sensitive biosensor platform based on dual-gate FET on a silicon-on-insulator substrate. This proposed biosensor overcame the limitations of conventional approaches. The biosensor platform consisted of a dual-gate FET transducer unit and a dopamine-sensitive extended gate sensing unit. The capacitive coupling between the top- and bottom-gate of the transducer unit allowed for self-amplification of the dopamine sensitivity, resulting in an increased sensitivity of 373.98 mV/log[DA] from concentrations 10 fM to 1 μM. Therefore, the proposed FET-based dopamine sensor is expected to be widely applied as a highly sensitive and reliable biosensor platform, enabling fast and accurate detection of dopamine levels in various applications such as medical diagnosis and drug development. [ABSTRACT FROM AUTHOR]

Copyright of Ostium is the property of Ostium and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

In this paper, we present different microelectromechanical systems based on electrostatic actuators, and demonstrate their capacity to achieve large and stepwise displacements using a cooperative function of the actuators themselves. To explore this, we introduced micro-stepper actuators to our experimental systems, both with and without a guiding spring mechanism; mechanisms with such guiding springs can be applied to comb-drive and parallel-plate actuators. Our focus was on comparing various guiding spring designs, so as to increase the actuator displacement. In addition, we present systems based on cascaded actuators; these are converted to micromechanical digital-to-analog converters (DAC). With DACs, the number of actuators (and thus the complexity of the digital control) are significantly reduced in comparison to analog stepper-actuators. We also discuss systems that can achieve even larger displacements by using droplet-based bearings placed on an array of aluminum electrodes, rather than guiding springs. By commutating the voltages within these electrode arrays, the droplets follow the activated electrodes, carrying platforms atop themselves as they do so. This process thus introduces new applications for springless large displacement stepper-actuators. [ABSTRACT FROM AUTHOR]

TCAD simulation using Silvaco software has shown that the 3G_DFM, which has SG1 (Select Gate 1), PL (Plate Line Gate), and SG2 (Select Gate 2) between SL (Source Line) and BL (Bit Line), has a long retention time of 100ms at 85 °C, and a robust disturbance shield which is a thousand times BL stress. The two select gates SG1 and SG2 protect the recombination of holes in the FB (Floating Body) at the SL and BL pn-junctions, and shield the BL stress arising during other page operations, which leads to the GIDL (Gate Induced Drain Leakage) current.

Grating couplers are essential components in silicon photonics that facilitate the coupling of light between waveguides and fibers. Optimization of the grating couplers to reach

Based on S-parameter measurements, the effect of dynamic trapping and de-trapping of charge in the gate oxide, the increase of dielectric loss due to polarization, and the impact of leakage current on the small-signal input impedance at RF is analyzed and represented. This is achieved by systematically extracting the corresponding model parameters from single device measurements at different frequency ranges, and then the methodology is applied to analyze the evolution of these parameters when the device is submitted to non-conducting electrical stress. This approach not only allows to inspect the impact of effects not occurring under DC conditions, such as the current due to the time varying dielectric polarization, but also to clearly distinguish effects in accordance with the functional form of their contribution to the device’s impedance. In fact, it is shown that minor changes in the model of the gate capacitance by including additional resistive and capacitive components allows for an excellent model-experiment correlation up to 30 GHz. Moreover, the accuracy of the correlation is shown to be maintained when applying the proposal to the device under different gate-to-source bias conditions and at several stages during off-state degradation.

The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It is demonstrated that thanks to the chemical activation step, the quality of the bonded interface is remarkably good. Good agreement between values of front-interface threshold voltage determined from CP and I-V measurements is obtained.

State-of-the-art SOI transistors require a very small body. This paper examines the effects of body thinning and thin-gate oxide in SOI MOSFETs on their electrical characteristics. In particular, the influence of film thickness on the interface coupling and carrier mobility is discussed. Due to coupling, the separation between the front and back channels is difficult in ultra-thin SOI MOSFETs. The implementation of the front-gate split C-V method and its limitations for determining the front- and back-channel mobility are described. The mobility in the front channel is smaller than that in the back channel due to additional Coulomb scattering. We also discuss the 3D coupling effects that occur in FinFETs with triple-gate and omega-gate configurations. In low-doped or tall fins the corner effect is suppressed. Narrow devices are virtually immune to substrate effects due to a strong lateral coupling between the two lateral sides of the gate. Short-channel effects are drastically reduced when the lateral coupling screens the drain influence.

A review of recently explored new effects in SOI nanodevices and materials is given. Recent advances in the understanding of the sensitivity of electron and hole transport to the tensile or compressive uniaxial and biaxial strains in thin film SOI are presented. The performance and physical mechanisms are also addressed in multi-gate Si, SiGe and Ge MOSFETs. The impact of gate misalignment or underlap, as well as the use of the back gate for charge storage in double-gate nanodevices and of capacitorless DRAMare also outlined.

Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic device. However, time domain analysis techniques exhibit their limitations in case where unstable RTN signals occur. These instabilities are a common issue in Multi-Level Cells (MLC) of resistive memories (ReRAM), when the tunning protocol fails to find a perfectly stable resistance state, which in turn brings fluctuations to the RTN signal especially in long time measurements and cause severe errors in the estimation of the distribution of time constants of the observed telegraphic events, i.e., capture/emission of carriers from traps. In this work, we analyze the case of the unstable filaments in silicon nitride-based ReRAM devices and propose an adaptive filter implementing a moving-average detrending method in order to flatten unstable RTN signals and increase sufficiently the accuracy of the conducted measurements. The τe and τc emission/capture time constants of the traps, respectively, are then calculated and a cross-validation through frequency domain analysis (Lorentzian fitting) was performed proving that the proposed method is accurate.

The need to achieve digital gas sensing technology, namely, a technology to sense and transmit gas-enabled digital media, has been recognized as highly challenging. This challenge has motivated the authors to focus on complementary metal oxide semiconductor silicon on insulator micro electro-mechanical system (CMOS-SOI-MEMS) technologies, and the result is a new pellistor-like sensor, dubbed GMOS, with integrated signal processing. In this study, we describe the performance of such sensors for the selective detection of mixtures of gases. The novel key ideas of this study are: (i) the use of the GMOS for gas sensing; (ii) applying the Kalman filter to improve the signal-to-noise ratio; (iii) adding artificial intelligence (AI) with tiny edge approach. [ABSTRACT FROM AUTHOR]

In recent years, the urban area has continued to develop, and the demand for water resources is increasing. Rainfall, as an important source of water resources, is gaining more and more attention. Under this background, it is very necessary to analyse the changes in rainfall in Beijing, the capital of China. This study analysed the daily average temperature, rainfall data from 20 stations in the Beijing area in the past 50 years (1960–2012). Linear regression, mean variance, M-K method and ArcGIS spatial analysis are used to analyse Beijing's temperature and rainfall characteristics. These methods are applied to analyse the mutual relations between Beijing's rainfall, temperature changes and the Southern Oscillation Index (SOI). The results show that in the past 50 years in Beijing, the precipitation has shown a downward trend, the temperature has generally shown an upward trend, and the evaporation has generally shown a downward trend. The interrelation between regional climate change and the SOI is not significant. In the past 50 years, urban development has been closely related to the reduction of rainfall and increase in temperature. This study responds to the urgent need for research on the rainfall and temperature. HIGHLIGHTS Different methods are used to analyse temperature and rainfall characteristics.; The variation of rainfall and temperature in Beijing over the past 50 years was analysed.; Different regions are affected differently by SOI, and the difference between North and South China is obvious.;

A commercial thermo-optic phase shifter (TOPS) is an efficient solution to the imbalance problem in the fabrication process of Mach–Zehnder modulator (MZM) arms. The TOPS consumes electrical power and transforms it into thermal energy, which changes the real part of the effective refractive index at the waveguide and adjusts the MZM transfer function to work in the linear region. The common model being used today is constructed with only one heater; however, this solution requires more electrical power, which can increase the transmitter system cost. To reduce the system energy cost, we propose a pioneering optimal double titanium nitride heater model under forward biasing at 1550 nm wavelength using the standard silicon-on-insulator technology. Numerical investigations were carried out on the key relative geometrical parameters, heat distribution at the silicon layer, thermal crosstalk, and laser wavelength drift. Results show that the optimal TOPS design can function with a low electrical power of 19.1 mW to achieve a π-phase shift, with a low thermal crosstalk of 0.404 and very low optical losses over 1 mm length. Thus, the proposed device can be used for improving the imbalance problem in MZMs with low electrical power consumption and low losses. This functionality can be utilized to obtain better performances in transmitter systems for data centers and long-range optical communication system applications.

The demand for miniaturized point‐of‐care chemical/biochemical sensors has driven the development of field‐effect transistors (FETs) based pH sensors over the last 50 years. This paper aims to review the fabrication technologies, device structures, sensing film materials, and modeling techniques utilized for FET‐based pH sensors. We present the governing principles of potentiometric sensors, with major focus on the working principles of ion‐sensitive FETs (ISFETs). We extensively review different sensing film materials deposited by various techniques, which is critical to the sensing performance of ISFETs. The popular fabrication technologies have been presented, with special emphasis on state‐of‐the‐art silicon‐on‐insulator based technology, which can achieve high sensitivity by utilizing the dual‐gate effect. Furthermore, recent advancements in nano‐ISFETs has been elucidated. We also discuss the adoption of unmodified complementary metal‐oxide semiconductor (CMOS) ISFETs using standard CMOS processes, which has enabled the fabrication of integrated ISFET arrays, which are especially suited for ion‐imaging applications. Moreover, recent developments in extended‐gate FETs has been discussed, which have gained lot of attention due to their design flexibility and ease of fabrication, which is desirable for wearable sensing applications. In addition, recently there have been efforts to utilize nonsilicon channel materials for pH‐sensing application to obtain superior performance and various channel materials have been reviewed. Finally, we have extensively reviewed the ISFET device modeling and simulation techniques using various computer‐aided design tools, which aid in sensor design and characterization. [ABSTRACT FROM AUTHOR]

In this brief, a new combiner analysis method for the design of Doherty Power Amplifiers (DPA) is proposed. A compact L-C combiner is used to validate the proposed method through both simulation and realization of a two-stage DPA in a 130nm RF-SOI process. Using a 2.3GHz CW signal, the PA achieves a measured peak PAE of 51% at 32dBm output power under 3.4V supply voltage. From 2.1GHz to 2.5GHz, the PA shows an average output power and PAE higher than 26.9dBm and 39% respectively at −35dBc E-UTRA ACLR when using a 10MHz-50RB QPSK LTE uplink signal with memoryless DPD. At 2.3GHz, the PA achieves a linear Pout and PAE of 28.85dBm and 42.8% respectively. [ABSTRACT FROM AUTHOR]

Climate–atmospheric patterns affect ecological processes. The El Niño Southern Oscillation (ENSO) represents the strongest global source of climate variability at annual scales, but its impacts on Mediterranean forests are still understudied. Here, ENSO signals recorded by river flow and radial growth series of Mediterranean riparian forests are uncovered in the middle Ebro basin, northeastern Spain. A chronology or mean series of tree ring widths (period 1970–2018, 27 trees) was built for narrow-leaved ash (Fraxinus angustifolia). Growth indices increased as the river flow did during the prior winter and from May to September. Ash growth indices and river flow of the hydrological year were positively related (r = 0.54, p < 0.001), suggesting that a higher soil moisture enhances growth. This correlation remained significant after taking out the influence of precipitation. Ash growth indices (r = −0.46, p = 0.001) and river flow during the hydrological year (r = −0.30, p = 0.03) were negatively associated with the January Southern Oscillation Index (SOI). These relationships suggest that high SOI values corresponding to La Niña events lead to reduced river flow, thus decreasing ash radial growth. Further approaches could be used to better understand how the ENSO impacts drought-prone riparian forests subjected to increasing aridity. [ABSTRACT FROM AUTHOR]

Seasonal migration has evolved as an adaptation for exploiting peaks of resource abundance and avoiding unfavourable climatic conditions. Differential migratory strategies and choices of wintering areas by long-distance migratory species may impose varying selective pressures and mortality risks with fitness consequences. Recently developed tracking technologies allow wintering movements of migratory species to be studied. However, these technologies typically involve a limited number of tracked individuals, which gives low statistical power for any robust estimate of survival probabilities. Additionally, when utilising geolocators, data become accessible only upon individual recapture, presenting a potential source of bias. We used multievent modelling to include information of 147 identified wintering tracks in the analysis of 1104 long-term individual capture histories (2000-2022) of migratory seabird Calonectris diomedea and then test if individual preferences for wintering areas may drive heterogeneity in adult survival. We also examined individual fidelity to wintering areas and tested if climatic and oceanographic conditions, as represented by the wNAO and SOI climatic indices, influenced survival and fidelity. The probability of fidelity to a wintering area was ca. 0.79. Annual changes between areas were influenced by environmental variability driven by the wNAO. Survival probability was influenced by the SOI and differed between wintering areas; these differences coupled with high wintering site fidelity, generated individual heterogeneity in adult survival. Our study reveals that, over the last two decades, some individuals wintered in less suitable areas, with nonnegligible consequences on adult survival, the parameter to which the population growth rate is most sensitive in long-lived species. Winter oceanographic conditions such as stormy weather or the proximity to upwellings probably play a relevant role in driving survival heterogeneity. Further research is needed to enhance our understanding of how the interlinked effects of climate, local selective pressures and individual condition shape population dynamics in migratory species., Competing Interests: The authors declare no conflicts of interest., (© 2024 The Author(s). Ecology and Evolution published by John Wiley & Sons Ltd.)

Le XIXe siècle a intégré un genre nouveau d’écriture en l’occurrence le genre intimiste avec le journal intime. Environ deux siècles plus tard, ce genre revient à l’occasion de l’internet, sous une forme nouvelle qui est celle des réseaux sociaux ; phénomène de société lié à l’épopée de soi, à la surreprésentation, voire l’exhibition de soi. Se montrer dans toute sa gloire, dans toute sa splendeur (réelle ou illusoire) dans toute sa transparence devient l’objectif de tous ces adeptes de ce nouvel outil de communication. Cette contribution vise à problématiser autour de l’ambition presque convulsive de se mettre en scène que l’on retrouve chez ces intimistes du siècle actuel.

Abstract The demand for miniaturized point‐of‐care chemical/biochemical sensors has driven the development of field‐effect transistors (FETs) based pH sensors over the last 50 years. This paper aims to review the fabrication technologies, device structures, sensing film materials, and modeling techniques utilized for FET‐based pH sensors. We present the governing principles of potentiometric sensors, with major focus on the working principles of ion‐sensitive FETs (ISFETs). We extensively review different sensing film materials deposited by various techniques, which is critical to the sensing performance of ISFETs. The popular fabrication technologies have been presented, with special emphasis on state‐of‐the‐art silicon‐on‐insulator based technology, which can achieve high sensitivity by utilizing the dual‐gate effect. Furthermore, recent advancements in nano‐ISFETs has been elucidated. We also discuss the adoption of unmodified complementary metal‐oxide semiconductor (CMOS) ISFETs using standard CMOS processes, which has enabled the fabrication of integrated ISFET arrays, which are especially suited for ion‐imaging applications. Moreover, recent developments in extended‐gate FETs has been discussed, which have gained lot of attention due to their design flexibility and ease of fabrication, which is desirable for wearable sensing applications. In addition, recently there have been efforts to utilize nonsilicon channel materials for pH‐sensing application to obtain superior performance and various channel materials have been reviewed. Finally, we have extensively reviewed the ISFET device modeling and simulation techniques using various computer‐aided design tools, which aid in sensor design and characterization.

This paper proposes a Dynamic Flash Memory (DFM) (Sakui and Harada, 2020; 2021 [1,2]) with double storage gates and one select gate based on FinFET and Surrounding Gate Transistor (SGT) (Takato et al., 1988 [3]) architectures. Like DRAM (Dennard, 1967 [4]), refresh is required, but fast block refresh improves the duty ratio. Analogous to Flash (Masuoka, 1981 [5]), three basic operations of “0” Erase, “1” Program, and Read are necessary, but the ability to carry out Read-While-Erase (RWE), and Program-While-Erase (PWE) operations in the background results in a faster system.

Silicon-on-insulator (SOI) wafers are crucial raw materials in the manufacturing process of microelectromechanical systems (MEMS). Residual stresses generated inside the wafers during the fabrication process can seriously affect the performance, reliability, and yield of MEMS devices. In this paper, a low-cost method based on mechanical modeling is proposed to characterize the residual stresses in SOI wafers in order to calculate the residual stress values based on the deformation of the beams. Based on this method, the residual strain of the MEMS beam, and thus the residual stress in the SOI wafer, were experimentally determined. The results were also compared with the residual stress results calculated from the deflection of the rotating beam to demonstrate the validity of the results obtained by this method. This method provides valuable theoretical reference and data support for the design and optimization of devices based on SOI-MEMS technology. It provides a lower-cost solution for the residual stress measurement technique, making it available for a wide range of applications.

Simple Summary: Spring in Europe has been trending earlier for almost half a century. Long-distance migrant birds, such as the Willow Warbler and Pied Flycatcher, which breed in Europe, have arrived earlier too. It is broadly accepted that warming springs in temperate regions explain the earlier arrival of migrants. However, migration started weeks earlier and thousands of kilometres away. There must be additional cues elsewhere triggering migration. Meteorologists have developed measures of atmospheric circulation which are related to climate variability in wide regions. One of them is the Southern Oscillation Index, which reflects El Niño/La Niña that cause droughts and floods in the southern hemisphere. Other atmospheric circulation patterns, measured by the North Atlantic Oscillation Index and Indian Ocean Dipole, help predict total rainfall for a whole season in various parts of Africa and Europe. Good rains are associated with plant growth and with insect abundance. Insects provide food for most of these migrants. Therefore, this paper asks the question: "Is the timing of arrival of long-distance migrants in spring related to the climates they experience in the places where they are over the year prior to arrival in Europe?" This paper says the answer is "Yes". Earlier springs in temperate regions since the 1980s, attributed to climate change, are thought to influence the earlier arrival of long-distance migrant passerines. However, this migration was initiated weeks earlier in Africa, where the Southern Oscillation, Indian Ocean Dipole, North Atlantic Oscillation drive climatic variability, and may additionally influence the migrants. Multiple regressions investigated whether 15 indices of climate in Africa and Europe explained the variability in timing of arrival for seven trans-Saharan migrants. Our response variable was Annual Anomaly (AA), derived from standardized mistnetting from 1982–2021 at Bukowo, Polish Baltic Sea. For each species, the best models explained a considerable part of the annual variation in the timing of spring's arrival by two to seven climate variables. For five species, the models included variables related to temperature or precipitation in the Sahel. Similarly, the models included variables related to the North Atlantic Oscillation (for four species), Indian Ocean Dipole (three), and Southern Oscillation (three). All included the Scandinavian Pattern in the previous summer. Our conclusion is that climate variables operating on long-distance migrants in the areas where they are present in the preceding year drive the phenological variation of spring migration. These results have implications for our understanding of carry-over effects. [ABSTRACT FROM AUTHOR]

Se analizó la dinámica de crecimiento de Aspidosperma polyneuron y Anacardium excelsum, especies que crecen en el bosque seco tropical en el departamento del Cesar. Se utilizaron técnicas dendrocronológicas y modelos de regresión (Clench, exponencial negativa, logístico y Gompertz). Los resultados obtenidos muestran que los anillos de A. polyneuron permitieron construir una cronología de 161 años (1854-2014) y los de A. excelsum de 128 años (1887-2014). El crecimiento de A. polyneuron mostró una respuesta positiva con la precipitación espontánea en los meses secos, mientras que A. excelsum la mostró en los meses más lluviosos. La temperatura y el SOI (Índice de Oscilación Sur) no mostraron correlaciones con el crecimiento. Los anillos de A. polyneuron y A. excelsum documentaron variaciones climáticas locales pero no globales, como el SOI. De acuerdo a los modelos de regresión las dos especies tardarán más de 100 años en alcanzar el diámetro máximo, por lo que es preciso pensar estrategias para la conservación de las especies y la deforestación evitada.