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High-Performance FET-Based Dopamine-Sensitive Biosensor Platform Based on SOI Substrate.
- Source :
- Biosensors (2079-6374); May2023, Vol. 13 Issue 5, p516, 12p
- Publication Year :
- 2023
-
Abstract
- Dopamine is a catecholamine neurotransmitter that plays a significant role in the human central nervous system, even at extremely low concentrations. Several studies have focused on rapid and accurate detection of dopamine levels using field-effect transistor (FET)-based sensors. However, conventional approaches have poor dopamine sensitivity with values <11 mV/log [DA]. Hence, it is necessary to increase the sensitivity of FET-based dopamine sensors. In the present study, we proposed a high-performance dopamine-sensitive biosensor platform based on dual-gate FET on a silicon-on-insulator substrate. This proposed biosensor overcame the limitations of conventional approaches. The biosensor platform consisted of a dual-gate FET transducer unit and a dopamine-sensitive extended gate sensing unit. The capacitive coupling between the top- and bottom-gate of the transducer unit allowed for self-amplification of the dopamine sensitivity, resulting in an increased sensitivity of 373.98 mV/log[DA] from concentrations 10 fM to 1 μM. Therefore, the proposed FET-based dopamine sensor is expected to be widely applied as a highly sensitive and reliable biosensor platform, enabling fast and accurate detection of dopamine levels in various applications such as medical diagnosis and drug development. [ABSTRACT FROM AUTHOR]
- Subjects :
- BIOSENSORS
DOPAMINE
FIELD-effect transistors
CENTRAL nervous system
Subjects
Details
- Language :
- English
- ISSN :
- 20796374
- Volume :
- 13
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Biosensors (2079-6374)
- Publication Type :
- Academic Journal
- Accession number :
- 163939033
- Full Text :
- https://doi.org/10.3390/bios13050516