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Magnetic tunnel junctions operating in the superparamagnetic regime are promising devices in the field of probabilistic computing, which is suitable for applications like high-dimensional optimization or sampling problems. Further, random number generation is of interest in the field of cryptography. For such applications, a device's uncorrelated fluctuation time-scale can determine the effective system speed. It has been theoretically proposed that a magnetic tunnel junction designed to have only easy-plane anisotropy provides fluctuation rates determined by its easy-plane anisotropy field and can perform on a nanosecond or faster time-scale as measured by its magnetoresistance's autocorrelation in time. Here, we provide experimental evidence of nanosecond scale fluctuations in a circular-shaped easy-plane magnetic tunnel junction, consistent with finite-temperature coupled macrospin simulation results and prior theoretical expectations. We further assess the degree of stochasticity of such a signal.

Barrier interface condition is critical for spin-polarized tunneling and spin-transfer torque switching in CoFeB∣MgO∣CoFeB-based magnetic tunnel junctions. The differential tunnel conductance gV contains information on CoFeB’s magnetic properties at tunnel interfaces. Experimentally, we find gV to follow a “cross-normalization” relationship between the parallel and antiparallel alignments. This we show originates from the leading order spin-flip scatter terms related to CoFeB interface magnetic properties such as its exchange-stiffness. By connecting the observable gV slopes to electrode-specific spin-flip scatter rates, we obtain an efficient measurement for mass-screening of junctions for interface magnetic differences. This provides valuable information for device and fabrication process optimization.Barrier interface condition is critical for spin-polarized tunneling and spin-transfer torque switching in CoFeB∣MgO∣CoFeB-based magnetic tunnel junctions. The differential tunnel conductance gV contains information on CoFeB’s magnetic properties at tunnel interfaces. Experimentally, we find gV to follow a “cross-normalization” relationship between the parallel and antiparallel alignments. This we show originates from the leading order spin-flip scatter terms related to CoFeB interface magnetic properties such as its exchange-stiffness. By connecting the observable gV slopes to electrode-specific spin-flip scatter rates, we obtain an efficient measurement for mass-screening of junctions for interface magnetic differences. This provides valuable information for device and fabrication process optimization.

The use of lithography and electroplating to fabricate variable-reluctance, nearly planar, integrated minimotors with 6-mm-diameter rotors on silicon wafers is described. The motors consist of six electroplated Permalloy® horseshoe-shaped cores that surround the rotor. Copper coils are formed around each core. The Permalloy and copper electroplating baths, electroplating seed layers, and through-mask plating techniques are similar to those used to fabricate inductive thin-film heads. High-aspect-ratio optical lithography or X-ray lithography was used to form the various resist layers. The rotors were fabricated separately, released from the substrate, and then slipped onto the shaft, which was plated as part of the stator fabrication process. The fabrication processes for stator and rotor are described in this paper, and initial minimotor operation data are presented.

Wide-field magneto-optic Kerr observation techniques are described for the imaging of magnetic recording heads and other small magnetic devices. The imaging problems encountered for these samples are quite different from those for continuous films and lead to a different set of experimental approaches. Observation techniques that preserve the magnetic state of the sample allow for the implementation of new image acquisition algorithms based on multiple additions and subtractions that progressively build up a weak Kerr contrast even under unfavorable experimental conditions. Examples of results are presented. >

We observe a strong correlation between magnetization relaxation and electrical resistivity in thin Permalloy $({\mathrm{Ni}}_{81}{\mathrm{Fe}}_{19},$ ``Py'') films. Electron scattering rates in the films were affected by varying film thickness and deposition conditions. This shows that the magnetization relaxation mechanism is analogous to ``bulk'' relaxation, where phonon scattering in bulk is replaced by surface and defect scattering in thin films. Another interesting finding is the increased magnetization damping with Pt layers adjacent to the Py films. This is attributed to the strong spin-orbit coupling in Pt, resulting in spin-flip scattering of electrons that enter from the Py.

The authors report on a newly discovered domain configuration, observed with a magnetooptical microscope, in narrow stripes of NiCoFe, CoFeCu and NiFe. The stripes-1 to 25 mu m wide and 0.5 to 2.0 mu m thick-are used as a model for a narrow-track pole of a recording head. The new domain configuration, with its magnetization oriented mostly in a plane perpendicular to the long dimension of the stripe, suggests the possibility of obtaining a large high-frequency susceptibility even in recording head poles as a narrow as 1 mu m. >

A magnetooptic microscope was used to observe the time-averaged magnetization distribution in an inductive thin-film head excited by continuous sine waves. Domain activity in yokes driven with sinusoidal currents (1 to 20 MHz) was observed using the Kerr effect at video frame rates (0 to 30 Hz). Thus, the average location and shape of domains in the top yoke of the head could be recorded. It is shown that the domain pattern generally undergoes significant changes in a slow, repeatable evolution. Some changes lead to abrupt conversions of domain states. Although specific behavior varies from head to head, these conversions follow measurable curves having a common trend in the amplitude versus frequency space. Previous work on analysis of head response has not considered this type of dynamic response, although it appears to be common to many magnetic system. In addition to possible response at the excitation frequency, the wall network can also undergo large changes with a time scale much longer than the excitation period. Three possible mechanisms driving the domain conversions are outlined. >