1. Latent ion tracks in amorphous silicon
- Author
-
Flyura Djurabekova, Kai Nordlund, Matias Rodriguez, Daniel Schauries, O. Osmani, Raquel Giulian, Baerbel Rethfeld, Olli H. Pakarinen, Patrick Kluth, Thomas Bierschenk, Nikita Medvedev, Boshra Afra, Mark C Ridgway, and Stephen T. Mudie
- Subjects
Amorphous silicon ,Materials science ,Astrophysics::High Energy Astrophysical Phenomena ,02 engineering and technology ,Silício ,Dinâmica molecular ,Microestrutura cristalina ,01 natural sciences ,Molecular dynamics ,chemistry.chemical_compound ,Condensed Matter::Materials Science ,Swift heavy ion ,0103 physical sciences ,ddc:530 ,Irradiation ,010306 general physics ,Semicondutores elementares ,Scattering ,Ion track ,Efeitos de radiação ,Semicondutores amorfos ,Physik (inkl. Astronomie) ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Microstructure ,Electronic, Optical and Magnetic Materials ,Amorphous solid ,chemistry ,Chemical physics ,0210 nano-technology - Abstract
We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions differ for as-implanted and relaxed Si as attributed to different microstructures and melting temperatures. The identification and characterization of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy-ion irradiation in amorphous semiconductors.
- Published
- 2013