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Latent ion tracks in amorphous silicon
- Source :
- Repositório Institucional da UFRGS, Universidade Federal do Rio Grande do Sul (UFRGS), instacron:UFRGS, Physical review / B 88(17), 174111 (2013). doi:10.1103/PhysRevB.88.174111
- Publication Year :
- 2013
-
Abstract
- We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions differ for as-implanted and relaxed Si as attributed to different microstructures and melting temperatures. The identification and characterization of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy-ion irradiation in amorphous semiconductors.
- Subjects :
- Amorphous silicon
Materials science
Astrophysics::High Energy Astrophysical Phenomena
02 engineering and technology
Silício
Dinâmica molecular
Microestrutura cristalina
01 natural sciences
Molecular dynamics
chemistry.chemical_compound
Condensed Matter::Materials Science
Swift heavy ion
0103 physical sciences
ddc:530
Irradiation
010306 general physics
Semicondutores elementares
Scattering
Ion track
Efeitos de radiação
Semicondutores amorfos
Physik (inkl. Astronomie)
021001 nanoscience & nanotechnology
Condensed Matter Physics
Microstructure
Electronic, Optical and Magnetic Materials
Amorphous solid
chemistry
Chemical physics
0210 nano-technology
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Repositório Institucional da UFRGS, Universidade Federal do Rio Grande do Sul (UFRGS), instacron:UFRGS, Physical review / B 88(17), 174111 (2013). doi:10.1103/PhysRevB.88.174111
- Accession number :
- edsair.doi.dedup.....0d91eff366f82585d212ea9b23bcb717