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19 results on '"Lepilliet, Sylvie"'

1. A G-Band Packaged Amplified Noise Source Using SiGe BiCMOS 55-nm Technology

Author

Fiorese, Victor, Azevedo Goncalves, Joao Carlos, Bouvot, Simon, Lepilliet, Sylvie, Gloria, Daniel, Ducournau, Guillaume, Gaquiere, Christophe, and Dubois, Emmanuel

Abstract

This article introduces the first BiCMOS SiGe technology-based packaged noise source (NS) operating in the $G$ -band (140–220 GHz). An amplified p-n junction diode has been packaged and biased in avalanche mode to generate excess noise ratios (ENRsav) of approximately 25 dB between 140 and 170 GHz at package output for an unbiased low state and a high state corresponding to a 20-mA cathode current. The two-stage amplifier is a cascode cell composed of two BiCMOS 55-nm NPN very high speed (NPNVHS) transistors with an emitter length and a width of 5.56 and 0.2 $\mu \text{m}$ , respectively. An optimal biasing results in a 8.2-mA current consumption for one cascode stage and an overall available power gain ( $G_{\mathrm {av}}$ ) better than 12 dB between 140 and 180 GHz. This supports operation in a low state, where the diode is unbiased and the amplifier is biased, which constitutes a scheme that easily validates the minimum detectable signal (MDS) condition while exhibiting a 14-dB ENRav level in the beginning of $G$ -band compared to this polarized low state. This NS shows a monitorable $P_{\mathrm {COLD}}$ and is adaptable to several noise receivers. In addition, the ENRav level flatness is better than 3 dB over the entire frequency range, and the impedance matching, better than −7.5 dB at package output, is not dependent on the NS bias condition. Noise figure (NF) extraction of a WR05-connectorized III–V amplifier [MPA04-1 from Virginia Diodes, Inc. (VDI)] was performed and compared to the ELVA ISSN-05 commercial NS measurement, showing low discrepancy. The same study was performed on- wafer for an NPNVHS transistor on BiCMOS 55-nm technology, showing a maximum discrepancy of 0.8 dB between the two measured NFs. The NF measurement accuracy of the MPA04-1 amplifier was assessed up to 220 GHz, by varying the chosen high state while keeping the low state completely unbiased. A maximum 0.5-dB variation over 12 obtained NF values is observed up to 200 GHz.

Published
2024
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5. Fabrication, and Direct Current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes.

Author

Fornasiero, Quentin, Defrance, Nicolas, Lepilliet, Sylvie, Avramovic, Vanessa, Cordier, Yvon, Frayssinet, Eric, Lesecq, Marie, Idir, Nadir, and De Jaeger, Jean-Claude

Subjects
SCHOTTKY barrier diodes, GALLIUM nitride, SEMICONDUCTOR lasers, THERMIONIC emission, TUNNEL design & construction, STRAY currents, DAMAGES (Law), ION implantation
Abstract

Schottky contacts on fluorine implanted AlGaN/GaN heterostructures with the ideality factor close to unity and low on-voltage threshold are presented in this paper. An SF6 plasma anode pretreatment followed by a specific low-temperature annealing is also compared to a nonannealed sample. In addition, physical-model parameters are extracted by means of cryogenic temperature measurements to understand the conduction mechanisms involved in annealed diodes, showing better DC performances than their nonannealed counterparts. Furthermore, annealing induces a decrease of the ideality factor, which sets the field-enhanced thermionic emission as the main conduction mechanism, and reduces the tunneling reverse current leakage. This effect is attributed to the recovery of the plasma-induced damages. [ABSTRACT FROM AUTHOR]

Published
2023
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7. mm-Wave Through-Load Element for On-Wafer Measurement Applications

Author

Margalef-Rovira, Marc, primary, Occello, Olivier, additional, Saadi, Abdelhalim A., additional, Avramovic, Vanessa, additional, Lepilliet, Sylvie, additional, Vincent, Loic, additional, Barragan, Manuel J., additional, Pistono, Emmanuel, additional, Bourdel, Sylvain, additional, Gaquiere, Christophe, additional, and Ferrari, Philippe, additional

Published
2021
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8. Analog/RF performance of multichannel SOI MOSFET

Author

Tao Chuan Lim, Bernard, Emilie, Rozeau, Olivier, Ernst, Thomas, Guillaumot, Bernard, Vulliet, Nathalie, Buj-Dufournet, Christel, Paccaud, Michel, Lepilliet, Sylvie, Dambrine, Gilles, and Danneville, Francois

Subjects
Silicon-on-isolator -- Usage, Metal oxide semiconductor field effect transistors -- Design and construction, Business, Electronics, Electronics and electrical industries
Abstract

The radio frequency (RF) experimental and simulation study of a 3-dimensional (3-D) multichannel silicon-on-insulator (SOI) MOSFET (MCFET) is presented. The studies have shown that optimized MCFETs are a serious contender to the mainstream MOSFETs including FinFETs for realizing future low-power analog applications.

Published
2009

9. Improved characterization methology for MOSFETs up to 220 GHz

Author

Waldhoff, Nicolas, Andrei, Cristian, Gloria, Daniel, Lepilliet, Sylvie, Danneville, Francois, and Dambrine, Gilles

Subjects
Business, Computers, Electronics, Electronics and electrical industries
Abstract

Measurement and modeling procedures to accurately extract a small-signal equivalent circuit of advanced MOSFETs up to 220 GHz are proposed. The methodology carried out goes from the vector network analyzer calibration to the simulation results using complex deembedding. Good comparisons between the measurement and the simulation data obtained using this procedure are shown up to 220 GHz. Index Terms--Calibration, circuit modeling, deembedding, millimeter-wave measurement, MOSFET, S-parameters, small-signal model.

Published
2009

11. High-frequency and noise performances of 65-nm MOSFET at liquid nitrogen temperature

Author

Siligaris, Alexandre, Pailloncy, Guillaume, Delcourt, Sebastien, Valentin, Raphael, Lepilliet, Sylvie, Danneville, Francois, Gloria, Daniel, and Dambrine, Gilles

Subjects
Metal oxide semiconductor field effect transistors -- Design and construction, Liquid nitrogen -- Thermal properties, Electromagnetic noise -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

The high-frequency properties of very deep sub-micron MOSFETs are investigated at liquid nitrogen temperature and at room temperature. The improvement of the noise performances shown by the device at 78 K is explained by the decrease of the operating temperature, extrinsic resistance values and an improvement of the dynamic performances at 78 K.

Published
2006

12. Design of mm-Wave Slow-Wave-Coupled Coplanar Waveguides

Author

Margalef-Rovira, Marc, primary, Lugo-Alvarez, Jose, additional, Bautista, Alfredo, additional, Vincent, Loic, additional, Lepilliet, Sylvie, additional, Saadi, Abdelhalim A., additional, Podevin, Florence, additional, Barragan, Manuel J., additional, Pistono, Emmanuel, additional, Bourdel, Sylvain, additional, Gaquiere, Christophe, additional, and Ferrari, Philippe, additional

Published
2020
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13. Highly Tunable High-Q Inversion-Mode MOS Varactor in the 1–325-GHz Band

Author

Margalef-Rovira, Marc, primary, Saadi, Abdelhalim A., additional, Vincent, Loic, additional, Lepilliet, Sylvie, additional, Gaquiere, Christophe, additional, Gloria, Daniel, additional, Durand, Cedric, additional, Barragan, Manuel J., additional, Pistono, Emmanuel, additional, Bourdel, Sylvain, additional, and Ferrari, Philippe, additional

Published
2020
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16. InAlGaN/GaN HEMTs at Cryogenic Temperatures

Author

Dogmus, Ezgi, primary, Kabouche, Riad, additional, Lepilliet, Sylvie, additional, Linge, Astrid, additional, Zegaoui, Malek, additional, Ben-Ammar, Hichem, additional, Chauvat, Marie-Pierre, additional, Ruterana, Pierre, additional, Gamarra, Piero, additional, Lacam, Cédric, additional, Tordjman, Maurice, additional, and Medjdoub, Farid, additional

Published
2016
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17. High-frequency and noise performances of 65-nm MOSFET at liquid nitrogen temperature

Author

UCL, Siligaris, Alexandre, Pailloncy, Guillaume, Delcourt, Sebastien, Valentin, Raphael, Lepilliet, Sylvie, Danneville, Francois, Gloria, Daniel, Dambrine, Gilles, UCL, Siligaris, Alexandre, Pailloncy, Guillaume, Delcourt, Sebastien, Valentin, Raphael, Lepilliet, Sylvie, Danneville, Francois, Gloria, Daniel, and Dambrine, Gilles

Abstract

In this paper, the high-frequency properties of MOSFETs at low-temperature operation are investigated through measurements and electrical simulations. The experimental results show that the device achieves a 335-GHz f(max) and a 300-GHz f(t) when operating at low temperature (78 K), which constitutes, respectively, a 78% and 34% improvement compared to the room temperature performances (296 K). The minimum noise figure NFmin decreases from 1.4 dB (296 K) to 0.5 dB at 30 GHz (78 K), while the associated gain increases from 8 to 12 dB.

Published
2006

18. Sb-HEMT: Toward 100-mV Cryogenic Electronics

Author

Noudeviwa, Albert, primary, Roelens, Yannick, additional, Danneville, François, additional, Olivier, Aurélien, additional, Wichmann, Nicolas, additional, Waldhoff, Nicolas, additional, Lepilliet, Sylvie, additional, Dambrine, Gilles, additional, Desplanque, Ludovic, additional, Wallart, Xavier, additional, Moschetti, Giuseppe, additional, Grahn, Jan, additional, and Bollaert, Sylvain, additional

Published
2010
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19. Analog/RF Performance of Multichannel SOI MOSFET

Author

Lim, Tao Chuan, primary, Bernard, Emilie, additional, Rozeau, Olivier, additional, Ernst, Thomas, additional, Guillaumot, Bernard, additional, Vulliet, Nathalie, additional, Buj-Dufournet, Christel, additional, Paccaud, Michel, additional, Lepilliet, Sylvie, additional, Dambrine, Gilles, additional, and Danneville, FranÇois, additional

Published
2009
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