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The epitaxial growth of {111} oriented Au on MoS$_2$ is well documented despite the large lattice mismatch (~8% biaxial strain), and the fact that a Au {001} orientation results in much less elastic strain. An analysis based on density functional and linear elasticity theories reveals that the {111} orientation is stabilized by a combination of favorable surface and interfacial contributions to the energy, and the compliance of the first layer of the MoS$_2$.

We report 73Ge-NMR and NQR results for ferromagnetic (FM) superconductor URhGe. The magnitude and direction of the internal field, H_int, and parameters of the electric field gradient at the Ge site were determined experimentally. Using powdered polycrystalline samples oriented by different methods, the field dependences of NMR shift and nuclear spin relaxation rates for H_0 // c (easy axis) and H_0 // b were obtained. From the NMR shifts for H_0 // b, we confirmed a gradual suppression of the Curie temperature and observed a phase separation near the spin reorientation. The observation of the phase separation gives microscopic evidence that the spin reorientation under H_0 // b is of first order at low temperatures. The nuclear spin-lattice relaxation rate 1/T_1 indicates that the magnetic fluctuations are suppressed for H_0 // c, whereas the fluctuations remain strongly for H_0 // b. The enhancements of both 1/T_1T and the nuclear spin-spin relaxation rate 1/T_2 for H_0 // b toward the spin reorientation field suggest that the field-induced superconductivity in URhGe emerges under the magnetic fluctuations along the b axis and the c axis., Comment: 7 pages, 10 figures, to be published in J. Phys. Soc. Jpn

Interest in photonic crystal nanocavities is fueled by advances in device performance, particularly in the development of low-threshold laser sources. Effective electrical control of high performance photonic crystal lasers has thus far remained elusive due to the complexities associated with current injection into cavities. A fabrication procedure for electrically pumping photonic crystal membrane devices using a lateral p-i-n junction has been developed and is described in this work. We have demonstrated electrically pumped lasing in our junctions with a threshold of 181 nA at 50K - the lowest threshold ever demonstrated in an electrically pumped laser. At room temperature we find that our devices behave as single-mode light-emitting diodes (LEDs), which when directly modulated, have an ultrafast electrical response up to 10 GHz corresponding to less than 1 fJ/bit energy operation - the lowest for any optical transmitter. In addition, we have demonstrated electrical pumping of photonic crystal nanobeam LEDs, and have built fiber taper coupled electro-optic modulators. Fiber-coupled photodetectors based on two-photon absorption are also demonstrated as well as multiply integrated components that can be independently electrically controlled. The presented electrical injection platform is a major step forward in providing practical low power and integrable devices for on-chip photonics., Comment: 10 pages, 13 figures

We present results on electrically driven nanobeam photonic crystal cavities formed out of a lateral p-i-n junction in gallium arsenide. Despite their small conducting dimensions, nanobeams have robust electrical properties with high current densities possible at low drive powers. Much like their two-dimensional counterparts, the nanobeam cavities exhibit bright electroluminescence at room temperature from embedded 1,250 nm InAs quantum dots. A small room temperature differential gain is observed in the cavities with minor beam self-heating suggesting that lasing is possible. These results open the door for efficient electrical control of active nanobeam cavities for diverse nanophotonic applications.

We report on a magneto-photoluminescence study of isotopically pure 70Ge/Si self-assembled type-II quantum dots. Oscillatory behaviors attributed to the Aharonov-Bohm effect are simultaneously observed for the emission energy and intensity of excitons subject to an increasing magnetic field. When the magnetic flux penetrates through the ring-like trajectory of an electron moving around each quantum dot, the ground state of an exciton experiences a change in its angular momentum. Our results provide the experimental evidence for the phase coherence of a localized electron wave function in group-IV Ge/Si self-assembled quantum structures., Comment: 4 pages, 4 figures

The transfer of information between different physical forms is a central theme in communication and computation, for example between processing entities and memory. Nowhere is this more crucial than in quantum computation, where great effort must be taken to protect the integrity of a fragile quantum bit. Nuclear spins are known to benefit from long coherence times compared to electron spins, but are slow to manipulate and suffer from weak thermal polarisation. A powerful model for quantum computation is thus one in which electron spins are used for processing and readout while nuclear spins are used for storage. Here we demonstrate the coherent transfer of a superposition state in an electron spin 'processing' qubit to a nuclear spin 'memory' qubit, using a combination of microwave and radiofrequency pulses applied to 31P donors in an isotopically pure 28Si crystal. The electron spin state can be stored in the nuclear spin on a timescale that is long compared with the electron decoherence time and then coherently transferred back to the electron spin, thus demonstrating the 31P nuclear spin as a solid-state quantum memory. The overall store/readout fidelity is about 90%, attributed to systematic imperfections in radiofrequency pulses which can be improved through the use of composite pulses. We apply dynamic decoupling to protect the nuclear spin quantum memory element from sources of decoherence. The coherence lifetime of the quantum memory element is found to exceed one second at 5.5K., Comment: v2: Tomography added and storage of general initial states

We have measured the electrical conductivity of nominally uncompensated ^{70}Ge:Ga samples in magnetic fields up to B=8 T at low temperatures (T=0.05-0.5 K) in order to investigate the metal-insulator transition in magnetic fields. The values of the critical exponents in magnetic fields are consistent with the scaling theories., Comment: 2 pages, 3 figures, in "Proceedings of the 25th International Conference on the Physics of Semiconductors," edited by N. Miura and T. Ando (Springer-Verlag, Berlin, 2001, ISBN 3-540-41778-8) pp. 152--153

We have determined the localization length \xi and the impurity dielectric susceptibility \chi_{\rm imp} as a function of Ga acceptor concentrations (N) in nominally uncompensated ^{70}Ge:Ga just below the critical concentration (N_c) for the metal-insulator transition. Both \xi and \chi_{\rm imp} diverge at N_c according to the functions \xi\propto(1-N/N_c)^{-\nu} and \chi_{\rm imp}\propto(N_c/N-1)^{-\zeta}, respectively, with \nu=1.2\pm0.3 and \zeta=2.3\pm0.6 for 0.99N_c< N< N_c. Outside of this region (N<0.99N_c), the values of the exponents drop to \nu=0.33\pm0.03 and \zeta=0.62\pm0.05. The effect of the small amount of compensating dopants that are present in our nominally uncompensated samples, may be responsible for the change of the critical exponents at N\approx0.99N_c., Comment: RevTeX, 4 pages with 5 embedded figures, final version (minor changes)

We have investigated the temperature dependence of the electrical conductivity sigma(N,B,T) of nominally uncompensated, neutron-transmutation-doped ^{70}Ge:Ga samples in magnetic fields up to B=8 T at low temperatures (T=0.05-0.5 K). In our earlier studies at B=0, the critical exponent mu=0.5 defined by sigma(N,0,0) \propto (N-N_c)^{mu} has been determined for the same series of ^{70}Ge:Ga samples with the doping concentration N ranging from 1.861 \times 10^{17} cm^{-3} to 2.434 \times 10^{17} cm^{-3}. In magnetic fields, the motion of carriers loses time-reversal symmetry, the universality class may change and with it the value of mu. In this work, we show that magnetic fields indeed affect the value of mu (mu changes from 0.5 at B=0 to 1.1 at B \geq 4 T). The same exponent mu'=1.1 is also found in the magnetic-field-induced MIT for three different ^{70}Ge:Ga samples, i.e., sigma(N,B,0) \propto [B_c(N)-B]^{mu'} where B_c(N) is the concentration-dependent critical magnetic induction. We show that sigma(N,B,0) obeys a simple scaling rule on the (N,B) plane. Based on this finding, we derive from a simple mathematical argument that mu=mu' as has been observed in our experiment., Comment: 9 pages, 5 figures, published version

We report the low temperature carrier transport properties of a series of nominally uncompensated neutron-transmutation doped (NTD) ^{70} Ge:Ga samples very close to the critical concentration N_c for the metal-insulator transition. The concentration of the sample closest to N_c is 1.0004N_c and it is unambiguously shown that the critical conductivity exponent is 0.5. Properties of insulating samples are discussed in the context of Efros and Shklovskii's variable range hopping conduction., Comment: 8 pages using REVTeX, 8 figures, published version