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We demonstrate an enhanced, bidirectional, in-plane magnetic field tuning of the gyrotropic resonance frequency of a magnetic vortex within a disk by introducing a flat edge. When the core is in its vicinity, the flat edge locally reduces the core's directional dynamic stiffness for movement parallel to the edge. This strongly reduces the net dynamic core stiffness, leading to the gyrotropic frequency being significantly less than when the core is centered (or located near the round edge). This leads to the measurable range of gyrotropic frequencies being more than doubled and also results in a clear chirality-mediated bistability of the gyrotropic resonance frequency due to what is effectively a chirality-dependence of the core's confining potential., Comment: 6 pages, 5 figures

Facing the ever-growing demand for data storage will most probably require a new paradigm. Nanoscale magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films where the cobalt layer is sandwiched between two heavy metals providing additive interfacial Dzyaloshinskii-Moriya interactions, which reach a value close to 2 mJ m-2 in the case of the Ir|Co|Pt asymmetric multilayers. Using a magnetization-sensitive scanning x-ray transmission microscopy technique, we imaged small magnetic domains at very low field in these multilayers. The study of their behavior in perpendicular magnetic field allows us to conclude that they are actually magnetic skyrmions stabilized by the large Dzyaloshinskii-Moriya interaction. This discovery of stable sub-100 nm individual skyrmions at room temperature in a technologically relevant material opens the way for device applications in a near future.

Vortex core polarity switching in NiFe disks has been evidenced using an all-electrical rectification scheme. Both simulation and experiments yield a consistent loss of the rectified signal when driving the core at high powers near its gyrotropic resonant frequency. The frequency range over which the loss occurs grows and shifts with increasing signal power, consistent with non-linear core dynamics and periodic switching of the core polarity induced by the core attaining its critical velocity. We demonstrate that core polarity switching can be impeded by displacing the core towards the disk's edge where an increased core stiffness reduces the maximum attainable core velocity., Comment: 6 pages, 5 figures

We report on graphene-passivated ferromagnetic electrodes (GPFE) for spin devices. GPFE are shown to act as spin-polarized oxidation-resistant electrodes. The direct coating of nickel with few layer graphene through a readily scalable chemical vapour deposition (CVD) process allows the preservation of an unoxidized nickel surface upon air exposure. Fabrication and measurement of complete reference tunneling spin valve structures demonstrates that the GPFE is maintained as a spin polarizer and also that the presence of the graphene coating leads to a specific sign reversal of the magneto-resistance. Hence, this work highlights a novel oxidation-resistant spin source which further unlocks low cost wet chemistry processes for spintronics devices.

Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 {\mu}m. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen.

Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors have recently emerged based on well-established physical phenomena with albeit modest resistance changes. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures.

Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer size magnetic tunnel junction. Moreover, we propose a spin dependent transport model giving a new understanding of spin injection into organic materials/molecules. Our findings bring a new insight on how one could tune spin injection by molecular engineering and paves the way to chemical tailoring of the properties of spintronics devices., Comment: Original version. Revised version to appear in Nature Physics.

Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below $10^{12} \unit{A/m^2}$, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities., Comment: Published version, Applied Physics Express 2, 023003 (2009) http://dx.doi.org/10.1143/APEX.2.023003