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Abstract Background Problematic Internet Use (PIU), characterized by failures to control the overuse of internet, is associated with a range of functional impairments. However, there is limited research on the specific impact of PIU on inhibitory control functions, particularly in terms of differentiating between prepotent response inhibition and interference control. Therefore, the main objective of this study is to investigate these two components of inhibitory control in individuals with PIU. Methods Thirty participants who met the PIU criteria and 30 control participants were included in the present study. All participants completed the Go/No-Go and Flanker tasks, in which internet-related images and words were used as task stimuli. Results In the Go/No-Go task, all participants exhibited poorer performance in inhibiting internet-related stimuli compared to internet-unrelated stimuli, during the No-Go trials. In the Flanker task, results revealed a three-way interaction of Group, Stimulus type and Congruency. Specifically, in the incongruent condition, participants with PIU exhibited slower responses for internet-unrelated targets compared to internet-related targets, whereas no similar effect was observed among individuals with low internet use. Conclusions The findings suggest that difficulties in controlling the interference effect of internet-related information represent a key dysfunction in inhibitory control of PIU.

Magnetic field effects on tris-(8-hydroxyquinoline) aluminum-based organic light-emitting devices (OLEDs) by employing Fe3O4 as a magnetic dopant in the hole-transport layer (HTL) have been studied. The magnetic doped OLEDs exhibit efficient injection and transport of holes, and its performances are further enhanced after a magnetic field is applied. The enhancement of luminance and current efficiency of 20% and 24% has been obtained from the magnetic doped devices, while they are only 8% and 9%, respectively, for the nondoped devices under an applied magnetic field of 500 mT. Organic magnetoresistance induced by the magnetic doped HTL is the main origin of increased electroluminescence for the magnetic doped OLEDs.

Hole injection improvement in organic light-emitting devices with Fe3O4 as a buffer layer on indium tin oxide (ITO) has been demonstrated. The luminance and the current density are significantly enhanced by using the Fe3O4/ITO anode, as well as the turn-on voltage is reduced by 1.5 V compared to the devices without the buffer. Results of atom force microscopy, x ray, and UV photoelectron spectroscopy studies reveal that the enhanced hole injection is attributed to the modification of the ITO surface and the reduced hole-injection barrier by the insertion of the Fe3O4 thin film between the ITO and hole-transporting layer. [ABSTRACT FROM AUTHOR]