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Abstract Zintl compounds have been extensively studied for their outstanding thermoelectric properties, but their electronic structure remains largely unexplored. Here, we present a detailed investigation of the electronic structure of the isostructural thermopower materials YbMg2Bi2 and CaMg2Bi2 using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). The ARPES results show a significantly smaller Fermi surface and Fermi velocity in CaMg2Bi2 than in YbMg2Bi2. Our ARPES results also reveal that in the case of YbMg2Bi2, Yb-4f states reside well below the Fermi level and likely have a negligible impact on transport properties. To properly model the position of 4f-states, as well as the overall electronic structure, a Hubbard U at the Yb sites and spin-orbit coupling (SOC) have to be included in the DFT calculations. The theoretical results reveal that both materials belong to a Z 2 topological class and host topological surface states around E F. Due to the intrinsic hole doping, the topological states reside above the Fermi level, inaccessible by ARPES. Our results also suggest that in addition to SOC, vacancies and the resulting hole doping play an important role in the transport properties of these materials.

Anomalous Nernst effect of epitaxial Fe4−xNixN films on MgAl2O4(001) substrates was characterized. The Ni/Fe ratio (x) in Fe4−xNixN films was changed in the range of 0 ≤ x ≤ 2.8, and the Fe4−xNixN phase started to decompose into FeNi at about x = 2.2. The anomalous Nernst coefficient (SANE) decreased with x from 1.7 to 0.6 μV/K and the Seebeck coefficient increased with x from −2.3 to 1.2 μV/K. The transverse thermoelectric conductivity (αxy) evaluated from the experimental data showed a decrease with x and the change of αxy dominated the change of SANE. The anomalous Hall conductivity and αxy of Fe4N and Fe2.8Ni1.2N were obtained by first-principles calculations, showing a significant difference from the experimental results, which might be caused by the contribution from the extrinsic mechanisms.

We have developed hard X-ray photoelectron spectroscopy (HAXPES) under an applied magnetic field of 1 kOe to study the electronic and magnetic states related to the MgO/Fe interface-induced perpendicular magnetic anisotropy (PMA). In this work, we used MgO (2 nm)/Fe (1.5 and 20 nm)/MgO(001) structures to reveal the interface-induced electronic states of the Fe film. Perpendicular magnetization of the 1.5-nm-thick Fe film without extrinsic oxidation of the Fe film was detected by the Fe 2p core-level magnetic circular dichroism (MCD) in HAXPES under a magnetic field, and easy magnetization axis perpendicular to the film plane was confirmed by ex situ magnetic hysteresis measurements. The valence-band HAXPES spectrum of the 1.5-nm-thick Fe film revealed that the Fe 3d electronic states were strongly modified from the thick Fe film and a reference bulk Fe sample due to the lifting of degeneracy in the Fe 3d states near the MgO/Fe interface. We found that the tetragonal distortion of the Fe film by the MgO substrate also contributes to the lifting of degeneracy in the Fe 3d states and PMA, as well as the Fe 3d-O 2p hybridization at the MgO/Fe interface, by comparing the valence-band spectrum with density functional theory calculations for MgO/Fe multilayer structures. Thus, we can conclude that the Fe 3d-O 2p hybridization and tetragonal distortion of the Fe film play important roles in PMA at the MgO/Fe interface. HAXPES with in situ magnetization thus represents a powerful new method for studying spintronic structures.

We investigated the voltage-controlled magnetic anisotropy (VCMA) in an ultrathin Ir-doped Fe layer with a CoxFe1−x termination layer. The VCMA effect depends on the concentration of the CoxFe1−x alloy, and a large VCMA coefficient, as high as −350 fJ/Vm, was obtained with a Co-rich termination layer. First principles calculations revealed that the increased VCMA effect is due not only to the added Co atoms but also to the Fe and Ir atoms adjacent to the Co atoms. Interface engineering using CoFe termination is also effective for recovering the tunneling magnetoresistance while maintaining a high VCMA effect. The developed structure is applicable for voltage-controlled magnetoresistive devices.

Electric field control of magnetization is usually weak and this hampers its application for the ultralow-power-consumption spintronic devices. Here, the authors demonstrate a mechanism to enhance the control of magnetic anisotropy by voltage-induced electric quadrupole in a metal–dielectric interface.

The electron spin degree of freedom can provide the functionality of “nonvolatility„ in electronic devices. For example, magnetoresistive random access memory (MRAM) is expected as an ideal nonvolatile working memory, with high speed response, high write endurance, and good compatibility with complementary metal-oxide-semiconductor (CMOS) technologies. However, a challenging technical issue is to reduce the operating power. With the present technology, an electrical current is required to control the direction and dynamics of the spin. This consumes high energy when compared with electric-field controlled devices, such as those that are used in the semiconductor industry. A novel approach to overcome this problem is to use the voltage-controlled magnetic anisotropy (VCMA) effect, which draws attention to the development of a new type of MRAM that is controlled by voltage (voltage-torque MRAM). This paper reviews recent progress in experimental demonstrations of the VCMA effect. First, we present an overview of the early experimental observations of the VCMA effect in all-solid state devices, and follow this with an introduction of the concept of the voltage-induced dynamic switching technique. Subsequently, we describe recent progress in understanding of physical origin of the VCMA effect. Finally, new materials research to realize a highly-efficient VCMA effect and the verification of reliable voltage-induced dynamic switching with a low write error rate are introduced, followed by a discussion of the technical challenges that will be encountered in the future development of voltage-torque MRAM.

We have performed high-resolution angle-resolved photoemission spectroscopy of oxygen-adsorbed Fe thin films on W(110) to elucidate the evolution of electronic states upon surface oxidation. After oxygen adsorption of 0.25 monolayer onto Fe films, we found a surface state in the vicinity of the Fermi level which exhibits an undulating energy band dispersion. Our first-principles band-structure calculation indicates that this state is attributed to the spin-polarized minority band arising from the hybridization between Fe 3d and O 2p orbitals. The present result suggests that the observed surface state is related to the unusual magnetic properties of oxidized Fe surfaces. [ABSTRACT FROM AUTHOR]

Structures and magnetic properties were systematically investigated for the monolayer (ML)-controlled Co | Ni multilayers with various Ni layer thicknesses, where the Co and Ni layers were epitaxially grown on a Al2O3 (1120) single crystal substrate or deposited on a thermally oxidized Si substrate. The epitaxial Co | Ni multilayers exhibited high uniaxial magnetic anisotropy energies (Ku) and low effective magnetic damping constants (αeff), resulting in the perpendicular magnetization with low damping even for the 1 ML-Ni | 1 ML-Co multilayer. By comparing the experimental results with the first principles calculation, we found that the Ni atoms largely contributed to the perpendicular anisotropy for the Co | Ni multilayers. We also discussed the possible mechanism dominating the magnitude of αeff for the Co | Ni multilayers based on the experiments and the calculations. The present results suggest that the epitaxial Co | Ni multilayer is a promising material to achieve high Ku and low magnetic damping simultaneously. [ABSTRACT FROM AUTHOR]

We study the spin and orbital magnetic moments in Ta/Co0.4Fe0.4B0.2/MgO by x-ray magnetic circular dichroism measurements as well as first-principles calculations, in order to clarify the origin of the perpendicular magnetic anisotropy. Both experimental and theoretical results show that orbital magnetic moment of Fe is more anisotropic than that of Co with respect to the magnetization direction. The anisotropy is larger for thinner CoFeB, indicating that Fe atoms at the interface with MgO contribute more than Co to the observed perpendicular magnetic anisotropy. [ABSTRACT FROM AUTHOR]

Anisotropic magnetoresistance (AMR) effects in Cox(Mn0.44Ga0.56)100−x epitaxial thin films were investigated in the temperature range of 5–300 K by changing the current (I) direction to the crystal axis and the Co content (x). The AMR ratios were mostly positive for I // Co2MnGa[100] and negative for I // Co2MnGa[110] and showed peak values at x = 49.7 at% for both current directions. AMR ratios calculated from s–d scattering theory, including crystal field effects with density of states information from first-principles calculations, well reproduced experimental features. [ABSTRACT FROM AUTHOR]

Electric-field-induced control of magnetic properties at room temperature has attracted considerable attention owing to its significant potential for facilitating the construction of ultralow-power-consumption electric devices. Voltage-controlled magnetic anisotropy (VCMA) effect in ultrathin ferromagnetic metals has shown that the magnetization of nanomagnets can be controlled by electric fields in extremely short periods (down to 0.1 ns). The VCMA effect in metals can be the ultimate technology for the operation of spintronics devices, such as nonvolatile random access memory, where high-speed operation with high writing endurance is indispensable. This review summarizes experimental studies of the VCMA effect. First, studies on VCMA in various systems are reviewed. Then, useful experimental and theoretical methods for VCMA research, i.e. electrical measurements using magnetic tunnel junction devices, x-ray magnetic circular dichroism spectroscopy, and first-principles studies, are described. Finally, the oxygen ion migration mechanism for electrochemical VCMA and the orbital magnetic moment and electric quadrupole mechanisms for purely electronic VCMA are discussed in detail. [ABSTRACT FROM AUTHOR]

The metastable phases of Fe1−xSnx alloys were stabilized by their epitaxial growth on MgO(100). The Fe1−xSnx alloys with a body-centered-cubic-based structure were realized in the range of 0 ≤ x ≤ 0.4. For x = 0.25, the B2 structure was observed by transmission electron microscopy and X-ray diffraction analysis, although the hexagonal D019 structure was a thermodynamically stable phase. With respect to magnetic properties, all the compositions show similar hysteresis curves except for x = 0.25. According to ab initio calculations, D03-Fe3Sn and B2-Fe3Sn have band structures similar to that of Fe, which results in a large tunnel magnetoresistance by coherent tunneling. [ABSTRACT FROM AUTHOR]

Electric-field (EF) effects have been studied on magnetic anisotropy in the metallic surfaces Pt/Fe/Pt(0 0 1) and Pd/Fe/Pd(0 0 1) by means of the first-principles electronic structure calculation which employs the generalized gradient approximation. The variation of anisotropy energy with respect to the EF is found to be opposite to each other. The modulus rate of the variation is larger by a few factors in the Pt substrate than in the Pd one. These results agree qualitatively well with the available experimental data. The electronic structures are presented and the origins in EF effects are discussed along a line of the second perturbative fashion. [ABSTRACT FROM AUTHOR]

In this study, the microscopic origins of the voltage-controlled magnetic anisotropy (VCMA) in 3d-ferromagnetic metals are revealed. Using in situ x-ray fluorescence spectroscopy that provides a high quantum efficiency, electric-field-induced changes in orbital magnetic moment and magnetic dipole Tz terms in ultrathin Co films are demonstrated. An orbital magnetic moment difference of 0.013µB was generated in the presence of electric fields of ±0.2V/nm. The VCMA of Co was properly estimated by the induced change in orbital magnetic moment, according to the perturbation theory model. The induced change in the magnetic dipole Tz term only slightly contributed to the VCMA in 3d-ferromagnetic metals. [ABSTRACT FROM AUTHOR]