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Voltage-controlled magnetic anisotropy in an ultrathin Ir-doped Fe layer with a CoFe termination layer

Authors :
Takayuki Nozaki
Masaki Endo
Masahito Tsujikawa
Tatsuya Yamamoto
Tomohiro Nozaki
Makoto Konoto
Hiroyuki Ohmori
Yutaka Higo
Hitoshi Kubota
Akio Fukushima
Masanori Hosomi
Masafumi Shirai
Yoshishige Suzuki
Shinji Yuasa
Source :
APL Materials, Vol 8, Iss 1, Pp 011108-011108-6 (2020)
Publication Year :
2020
Publisher :
AIP Publishing LLC, 2020.

Abstract

We investigated the voltage-controlled magnetic anisotropy (VCMA) in an ultrathin Ir-doped Fe layer with a CoxFe1−x termination layer. The VCMA effect depends on the concentration of the CoxFe1−x alloy, and a large VCMA coefficient, as high as −350 fJ/Vm, was obtained with a Co-rich termination layer. First principles calculations revealed that the increased VCMA effect is due not only to the added Co atoms but also to the Fe and Ir atoms adjacent to the Co atoms. Interface engineering using CoFe termination is also effective for recovering the tunneling magnetoresistance while maintaining a high VCMA effect. The developed structure is applicable for voltage-controlled magnetoresistive devices.

Details

Language :
English
ISSN :
2166532X
Volume :
8
Issue :
1
Database :
Directory of Open Access Journals
Journal :
APL Materials
Publication Type :
Academic Journal
Accession number :
edsdoj.4ab07d5f576467b820c51bbfc833231
Document Type :
article
Full Text :
https://doi.org/10.1063/1.5132626