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Based on ab initio formulation and using nonequilibrium Green's function (NEGF) formalism, electronic transport in the presence of electron-phonon interactions in strained-engineered nanoscale transistors is presented. Ab initio methods are applied to treat the metal/semiconductor interface properly. NEGF formalism is applied as quantum transport and phonon scattering are the dominant factors in devices under realistic operating voltages. Local self-energy functions for electron-phonon scattering have been obtained using deformation potential theory. This approach is applied to the study of electronic transport in strain-engineered nanowire transistors. Electron-phonon interactions on broadening of local density of states are also reported. [ABSTRACT FROM AUTHOR]