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NONEQUILIBRIUM GREEN'S FUNCTION BASED QUANTUM TRANSPORT SIMULATION FOR STRAINED-ENGINEERED NANOSCALE TRANSISTORS IN THE PRESENCE OF ELECTRON-PHONON INTERACTIONS.
- Source :
-
International Journal of Nanoscience . Aug2010, Vol. 9 Issue 4, p327-333. 7p. - Publication Year :
- 2010
-
Abstract
- Based on ab initio formulation and using nonequilibrium Green's function (NEGF) formalism, electronic transport in the presence of electron-phonon interactions in strained-engineered nanoscale transistors is presented. Ab initio methods are applied to treat the metal/semiconductor interface properly. NEGF formalism is applied as quantum transport and phonon scattering are the dominant factors in devices under realistic operating voltages. Local self-energy functions for electron-phonon scattering have been obtained using deformation potential theory. This approach is applied to the study of electronic transport in strain-engineered nanowire transistors. Electron-phonon interactions on broadening of local density of states are also reported. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0219581X
- Volume :
- 9
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- International Journal of Nanoscience
- Publication Type :
- Academic Journal
- Accession number :
- 55775426
- Full Text :
- https://doi.org/10.1142/S0219581X10006909