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1. High-performance ZnO transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °C.

Author

Lin YH, Faber H, Zhao K, Wang Q, Amassian A, McLachlan M, and Anthopoulos TD

Abstract

An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm(2) /Vs at temperatures <180 °C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic., (Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Published
2013
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