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High-performance ZnO transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °C.
- Source :
-
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2013 Aug 21; Vol. 25 (31), pp. 4340-6. Date of Electronic Publication: 2013 Jun 25. - Publication Year :
- 2013
-
Abstract
- An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm(2) /Vs at temperatures <180 °C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic.<br /> (Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)
Details
- Language :
- English
- ISSN :
- 1521-4095
- Volume :
- 25
- Issue :
- 31
- Database :
- MEDLINE
- Journal :
- Advanced materials (Deerfield Beach, Fla.)
- Publication Type :
- Academic Journal
- Accession number :
- 23798486
- Full Text :
- https://doi.org/10.1002/adma.201301622