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Porphyrins, a type of heterocyclic aromatic compounds consisting of tetrapyrroles connected by four substituted methine groups, are appealing building blocks for solar energy applications. However, their photosensitization capability is limited by their large optical energy gap, which results in a mismatch in absorption toward efficient harvesting of the solar spectrum. Porphyrin π-extension by edge-fusing with nanographenes can be employed for narrowing their optical energy gap from 2.35 to 1.08 eV, enabling the development of porphyrin-based panchromatic dyes with an optimized energy onset for solar energy conversion in dye-sensitized solar fuel and solar cell configurations. By combining time-dependent density functional theory with fs transient absorption spectroscopy, it is found that the primary singlets, which are delocalized across the entire aromatic part, are transferred into metal centred triplets in only 1.2 ps; and subsequently, relax toward ligand-delocalized triplets. This observation implies that the decoration of the porphyrin moiety with nanographenes, while having a large impact on the absorption onset of the novel dye, promotes the formation of a ligand-centred lowest triplet state of large spatial extension, potentially interesting for boosting interactions with electron scavengers. These results reveal a design strategy for broadening the applicability of porphyrin-based dyes in optoelectronics., (© 2023 Wiley-VCH GmbH.)

Two-dimensional conjugated metal-organic frameworks (2D c-MOFs) are emerging as a unique class of electronic materials. However, 2D c-MOFs with band gaps in the Vis-NIR and high charge carrier mobility are rare. Most of the reported conducting 2D c-MOFs are metallic (i.e. gapless), which largely limits their use in logic devices. Herein, we design a phenanthrotriphenylene-based, D 2h -symmetric π-extended ligand (OHPTP), and synthesize the first rhombic 2D c-MOF single crystals (Cu 2 (OHPTP)). The continuous rotation electron diffraction (cRED) analysis unveils the orthorhombic crystal structure at the atomic level with a unique slipped AA stacking. The Cu 2 (OHPTP) is a p-type semiconductor with an indirect band gap of ≈0.50 eV and exhibits high electrical conductivity of 0.10 S cm -1 and high charge carrier mobility of ≈10.0 cm 2  V -1  s -1 . Theoretical calculations underline the predominant role of the out-of-plane charge transport in this semiquinone-based 2D c-MOF., (© 2023 Wiley-VCH GmbH.)

Single-layer and multi-layer 2D polyimine films have been achieved through interfacial synthesis methods. However, it remains a great challenge to achieve the maximum degree of crystallinity in the 2D polyimines, which largely limits the long-range transport properties. Here we employ a surfactant-monolayer-assisted interfacial synthesis (SMAIS) method for the successful preparation of porphyrin and triazine containing polyimine-based 2D polymer (PI-2DP) films with square and hexagonal lattices, respectively. The synthetic PI-2DP films are featured with polycrystalline multilayers with tunable thickness from 6 to 200 nm and large crystalline domains (100-150 nm in size). Intrigued by high crystallinity and the presence of electroactive porphyrin moieties, the optoelectronic properties of PI-2DP are investigated by time-resolved terahertz spectroscopy. Typically, the porphyrin-based PI-2DP 1 film exhibits a p-type semiconductor behavior with a band gap of 1.38 eV and hole mobility as high as 0.01 cm 2  V -1  s -1 , superior to the previously reported polyimine based materials., (© 2020 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.)

Metal-organic frameworks (MOFs) are emerging as an appealing class of highly tailorable electrically conducting materials with potential applications in optoelectronics. Yet, the realization of their proof-of-concept devices remains a daunting challenge, attributed to their poor electrical properties. Following recent work on a semiconducting Fe 3 (THT) 2 (NH 4 ) 3 (THT: 2,3,6,7,10,11-triphenylenehexathiol) 2D MOF with record-high mobility and band-like charge transport, here, an Fe 3 (THT) 2 (NH 4 ) 3 MOF-based photodetector operating in photoconductive mode capable of detecting a broad wavelength range from UV to NIR (400-1575 nm) is demonstrated. The narrow IR bandgap of the active layer (≈0.45 eV) constrains the performance of the photodetector at room temperature by band-to-band thermal excitation of charge carriers. At 77 K, the device performance is significantly improved; two orders of magnitude higher voltage responsivity, lower noise equivalent power, and higher specific detectivity of 7 × 10 8 cm Hz 1/2 W -1 are achieved under 785 nm excitation. These figures of merit are retained over the analyzed spectral region (400-1575 nm) and are commensurate to those obtained with the first demonstrations of graphene- and black-phosphorus-based photodetectors. This work demonstrates the feasibility of integrating conjugated MOFs as an active element into broadband photodetectors, thus bridging the gap between materials' synthesis and technological applications., (© 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

The bandgap of CuIn 1- x Ga x Se 2 (CIGS) chalcopyrite semiconductors can be tuned between ≈1.0 and ≈1.7 eV for Ga contents ranging between x = 0 and x = 1. While an optimum bandgap of 1.34 eV is desirable for achieving maximum solar energy conversion in solar cells, state-of-the-art CIGS-based devices experience a drop in efficiency for Ga contents x > 0.3 (i.e., for bandgaps >1.2 eV), an aspect that is limiting the full potential of these devices. The mechanism underlying the limited performance as a function of CIGS composition has remained elusive: both surface and bulk recombination effects are proposed. Here, the disentanglement between surface and bulk effects in CIGS absorbers as a function of Ga content is achieved by comparing photogenerated charge carrier dynamics in air/CIGS and surface-passivated ZnO/CdS/CIGS samples. While surface passivation prevents surface recombination of charge carriers for low Ga content (x < 0.3; up to 1.2 eV bandgap), surface recombination dominates for higher-bandgap materials. The results thus demonstrate that surface, rather than bulk effects, is responsible for the drop in efficiency for Ga contents larger than x ≈ 0.3., (© 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

On-chip micro-supercapacitors (MSCs) are important Si-compatible power-source backups for miniaturized electronics. Despite their tremendous advantages, current on-chip MSCs require harsh processing conditions and typically perform like resistors when filtering ripples from alternating current (AC). Herein, we demonstrated a facile layer-by-layer method towards on-chip MSCs based on an azulene-bridged coordination polymer framework (PiCBA). Owing to the good carrier mobility (5×10 -3  cm 2  V -1  s -1 ) of PiCBA, the permanent dipole moment of azulene skeleton, and ultralow band gap of PiCBA, the fabricated MSCs delivered high specific capacitances of up to 34.1 F cm -3 at 50 mV s -1 and a high volumetric power density of 1323 W cm -3 . Most importantly, such MCSs exhibited AC line-filtering performance (-73° at 120 Hz) with a short resistance-capacitance constant of circa 0.83 ms., (© 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.)