Back to Search
Start Over
Composition-Dependent Passivation Efficiency at the CdS/CuIn 1- x Ga x Se 2 Interface.
- Source :
-
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2020 Mar; Vol. 32 (9), pp. e1907763. Date of Electronic Publication: 2020 Jan 27. - Publication Year :
- 2020
-
Abstract
- The bandgap of CuIn <subscript>1-</subscript> <subscript>x</subscript> Ga <subscript>x</subscript> Se <subscript>2</subscript> (CIGS) chalcopyrite semiconductors can be tuned between ≈1.0 and ≈1.7 eV for Ga contents ranging between x = 0 and x = 1. While an optimum bandgap of 1.34 eV is desirable for achieving maximum solar energy conversion in solar cells, state-of-the-art CIGS-based devices experience a drop in efficiency for Ga contents x > 0.3 (i.e., for bandgaps >1.2 eV), an aspect that is limiting the full potential of these devices. The mechanism underlying the limited performance as a function of CIGS composition has remained elusive: both surface and bulk recombination effects are proposed. Here, the disentanglement between surface and bulk effects in CIGS absorbers as a function of Ga content is achieved by comparing photogenerated charge carrier dynamics in air/CIGS and surface-passivated ZnO/CdS/CIGS samples. While surface passivation prevents surface recombination of charge carriers for low Ga content (x < 0.3; up to 1.2 eV bandgap), surface recombination dominates for higher-bandgap materials. The results thus demonstrate that surface, rather than bulk effects, is responsible for the drop in efficiency for Ga contents larger than x ≈ 0.3.<br /> (© 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)
Details
- Language :
- English
- ISSN :
- 1521-4095
- Volume :
- 32
- Issue :
- 9
- Database :
- MEDLINE
- Journal :
- Advanced materials (Deerfield Beach, Fla.)
- Publication Type :
- Academic Journal
- Accession number :
- 31984586
- Full Text :
- https://doi.org/10.1002/adma.201907763