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A method of using non‐volatile and fast ferroelectric field‐effect transistor (FeFET) devices to realize Boolean logic is proposed. First, the internal states are initialized. Then, the gate and body function as input terminals, which are used to write the states of the device, based on the voltage. Finally, the output signals can be easily read through the drain current. Of the 10 Institute of Electrical and Electronics Engineers (IEEE) standard logic gates, eight can be implemented using the proposed operation method alone and by following the definitions listed herein. Thus, to enable FeFET devices to act as functional logic gates, a simple operating method is proposed, providing substantial contributions to the development of computing in memory. The experimental results provide evidence of the efficacy of this method. [ABSTRACT FROM AUTHOR]

In this study, a one transistor one resistor (1T1R) structure combining a fin‐like low‐temperature polycrystalline‐silicon (LTPS) transistor and a resistive random access memory (RRAM) is successfully fabricated. For the fin‐like LTPS transistor, both n‐type and p‐types show excellent electrical output characteristics. Fin‐like structure produces more stable output characteristics. Also, the forming and current–voltage (I–V) characteristics are measured in this study, and the RRAM exhibits a forming voltage of about −1.9 V. As for the I–V switching property, the devices are stable and show excellent performance, with the set and reset voltages showing only minimal change over 100 cycles. Moreover, combining the fin‐like LTPS transistor and RRAM into a 1T1R structure results in favorable operation over 100 cycles, with excellent retention and endurance. According to these results, RRAM can be successfully combined with a fin‐like LTPS transistor for application in current integrated circuit processes without difficulty. [ABSTRACT FROM AUTHOR]

A sensitive method for the determination of mexiletine and lidocaine using surfactant-assisted dispersive liquid-liquid microextraction coupled with capillary electrophoresis was developed. Triton X-100 and dichloromethane were used as the dispersive agent and extraction solvent, respectively. After the extraction, mexiletine and lidocaine were analyzed using capillary electrophoresis with ultraviolet detection. The detection sensitivity was further enhanced through the use of field-amplified sample stacking. Under optimal extraction and stacking conditions, the calibration curves were linear over a concentration range of 0.05-1.00 μM for mexiletine and 0.03-1.00 μM for lidocaine. The limits of detection (signal-to-noise ratio of 3) were 0.01 and 0.01 μM for mexiletine and lidocaine, respectively. An approximately 1141- to 1250-fold improvement in sensitivity was observed for the two analytes compared with the injection of a standard solution without the surfactant-assisted dispersive liquid-liquid microextraction and field-amplified sample stacking procedures. This developed method was successfully applied to the determination of mexiletine and lidocaine in human urine and serum samples. Both precision and accuracy for urine and serum samples were less than 8.7 and 6.7%, respectively. The recoveries of the two analytes from urine and serum samples were 54.7-64.9% and 16.1-56.5%, respectively. [ABSTRACT FROM AUTHOR]

Herein, the supercritical hydrogen treatment is proposed to improve the performance of zinc oxide‐based resistive random access memory. After treatment, the treated device not only achieves the forming‐free characteristic but also gets enhanced in its memory window, reset voltage, and reliability. Moreover, X‐Ray photoelectron spectroscopy analysis confirms the forming‐free characteristic of the treated device since the treatment decreases the concentration of ZnO bonding in the zinc oxide thin film, leading the conductive filament to be constructed in the zinc oxide switching layer. Next, the carrier transport mechanism is investigated by fitting current–voltage curves. Finally, the physical models based on the electrical properties and the material analyses are introduced to illustrate the oxygen ions and hydroxide ions that create the forming‐free characteristic and better memory characteristics in the random access memory device after the supercritical fluid treatment. Hence, this method demonstrates the promising practical and effective utilization of enhancing memory devices, in the future. [ABSTRACT FROM AUTHOR]