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The influence of the growth substrate on the internal quantum efficiency (IQE) of deep ultraviolet light‐emitting diodes is studied. Two nominally identical Al‐rich AlGaN/AlN multi‐quantum‐well (MQW) structures grown by metal–organic vapor phase epitaxy (MOVPE) on different substrates are investigated. The first MQW structure is grown on a native AlN substrate, whereas the second one is deposited on an AlN template on sapphire. By the combination of atomic force microscopy (AFM), photoluminescence (PL), and cathodoluminescence (CL) spectroscopy, it is demonstrated that the dislocation‐mediated spiral growth of MQWs on sapphire results in the more efficient localization of carriers. This effect helps to prevent nonradiative carrier recombination at point defects, improving the IQE of the structure. [ABSTRACT FROM AUTHOR]

Herein, the optical properties of aluminum nitride (AlN) epitaxial layers grown on sapphire substrates by metal‐organic chemical vapor deposition (MOCVD) are reported. The structures investigated in this study are grown at highly different degrees of supersaturation in the MOCVD process. In addition, both pulsed and continuous growth conditions are employed and AlN is deposited on nucleation layers favoring different polarities. The samples are investigated by photoluminescence (PL), photoluminescence excitation (PLE), and absorption spectroscopy and are found to vary significantly in absorption and emission characteristics. Two distinct absorption bands in the UV‐C spectral range are observed and examined in greater detail, with either giving rise to a significant absorption coefficient of around 1000 cm−1. The corresponding defect transitions are identified by PL spectroscopy. Combined with secondary‐ion mass spectrometry (SIMS) measurements, these absorption bands are allocated to the incorporation of carbon and oxygen impurities, depending on the applied growth conditions. Furthermore, similarities with other epitaxial growth techniques serving as basis for UV‐C applications are highlighted. These results are highly relevant for a better understanding of absorption issues in AlN templates grown by various deposition techniques. In addition, consequences for the growth of efficient UV‐C devices by MOCVD on sapphire substrates are outlined. [ABSTRACT FROM AUTHOR]

The carrier dynamics of Al‐rich AlGaN/AlN quantum well (QW) structures in the presence of strong carrier localization is reported. Excitation density‐dependent photoluminescence (PL) measurements at low temperatures reveal a clear correlation between the onset of efficiency droop and the broadening of the time‐integrated PL spectra. While the droop onset is heavily impacted by the localization strength, the PL emission broadening is observed almost exclusively on the high energy side of the emission spectrum. Spectrally resolved PL decay transient measurements reveal a strong dependency of the carrier lifetimes on the emission photon energy across the spectrum, consistent with a distribution of localized states, as well as on the temperature, depending on the localization strength of the investigated structure. The characteristic "S"‐shaped temperature dependence of the PL emission energy is shown to be directly correlated to the thermal redistribution of carriers between localized states. Based on these findings, the role of carrier localization in the recombination processes in AlGaN QW structures is underlined and its implications for efficiency droop are discussed. [ABSTRACT FROM AUTHOR]

AlGaN lateral polarity structures (LPS) with varying Al composition, have been fabricated by metalorganic chemical vapour deposition on LPS templates containing µm size domains. III-metal and N-polar AlGaN domains have been grown on LT-AlN and c-sapphire domains, respectively. LPS characterization by SEM and AFM reveals two major effects when the Al composition has been varied: (a) A high Al content leads to columnar growth within N-polar domains and (b) a height difference between the polar domains can be observed for low Al compositions towards III-polarity. The surface quality of the III-polar domains is not effected by the Al composition. The surface roughness of N-polar domains decreases for lower Al compositions. The high periodicity of the polar domains and the high quality of the boundary between domains suggest a high potential of AlGaN LPS to be used as lateral wave guides for quasi phase matching. [ABSTRACT FROM AUTHOR]