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Buried-channel semiconductor heterostructures are an archetype material platform for the fabrication of gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface; however, nearby surface states degrade the electrical properties of the starting material. Here, a 2D hole gas of high mobility (5 × 105 cm2 V−1 s−1) is demonstrated in a very shallow strained germanium (Ge) channel, which is located only 22 nm below the surface. The top-gate of a dopant-less field effect transistor controls the channel carrier density confined in an undoped Ge/SiGe heterostructure with reduced background contamination, sharp interfaces, and high uniformity. The high mobility leads to mean free paths ≈ 6 µm, setting new benchmarks for holes in shallow field effect transistors. The high mobility, along with a percolation density of 1.2 × 1011cm−2, light effective mass (0.09me), and high effective g-factor (up to 9.2) highlight the potential of undoped Ge/SiGe as a low-disorder material platform for hybrid quantum technologies.

We consider two interacting quantum dots coupled by standard superconductors. We derive an effective Hamiltonian, and show that over a wide parameter range a degenerate ground state can be obtained. An exotique form of Majorana bound states are supported at these degeneracies, and the system can be adiabatically tuned to a limit in which it is equivalent to the one-dimensional wire model of Kitaev. We give the form of a Majorana bound state in this system in the strong interaction limit in the many-particle picture. We also study the Josephson current in this system, and demonstrate that a double slit-like pattern emerges in the presence of an extra magnetic field. This pattern is shown to disappear with increasing interaction strength, which is able to be explained as the current being carried by chargeless Majorana modes.

The surface of a three-dimensional (3D) topological insulator is conducting and the topologically nontrivial nature of the surface states is observed in experiments. It is the aim of this paper to review and analyze experimental observations with respect to the magnetotransport in Bi-based 3D topological insulators, as well as the superconducting transport properties of hybrid structures consisting of superconductors and these topological insulators. The helical spin-momentum coupling of the surface state electrons becomes visible in quantum corrections to the conductivity and magnetoresistance oscil-lations. An analysis will be provided of the reported magnetoresistance, also in the presence of bulk conductivity shunts. Special attention is given to the large and linear magnetoresistance. Superconductivity can be induced in topological superconductors by means of the proximity effect. The induced supercurrents, Josephson effects and current–phase relations will be reviewed. These materials hold great potential in the field of spintronics and the route towards Majorana devices