18 results on '"Ion channeling"'
Search Results
2. RBS/C, XRR, and XRD Studies of Damage Buildup in Er‐Implanted ZnO
- Author
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Andrzej Turos, Katharina Lorenz, Renata Ratajczak, René Heller, Cyprian Mieszczynski, Miguel Carvalho Sequeira, Roman Böttger, Eduardo Alves, Przemyslaw Jozwik, and Sérgio Ricardo Magalhães
- Subjects
010302 applied physics ,X-ray reflectivity ,Materials science ,Ion channeling ,0103 physical sciences ,Monte Carlo method ,Analytical chemistry ,02 engineering and technology ,021001 nanoscience & nanotechnology ,0210 nano-technology ,Condensed Matter Physics ,01 natural sciences ,Electronic, Optical and Magnetic Materials - Published
- 2018
3. Structural analysis of (Ga,Mn)N epilayers and self-organized dots using MeV ion channeling
- Author
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Takeshi Ohshima, Shinji Kuroda, Hisayoshi Itoh, Henri Mariette, Edith Bellet-Amalric, Takuro Sakai, Joel Cibert, S. Marcet, and S. Yamamoto
- Subjects
Diffraction ,Materials science ,Analytical chemistry ,Surfaces and Interfaces ,Condensed Matter Physics ,Spectral line ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Crystal ,Crystallography ,Impurity ,Phase (matter) ,Ion channeling ,Materials Chemistry ,Electrical and Electronic Engineering ,Wurtzite crystal structure ,Molecular beam epitaxy - Abstract
Rutherford backscattering (RBS) and particle-induced X-ray emission (PIXE) experiments were performed on (Ga,Mn)N epilayers and self-organized dots grown by plasma-assisted MBE. The combined channeling RBS and Mn PIXE experiments were performed on Ga 0.949 M 0.051 N epilayer, which was confirmed to be of pure diluted phase by X-ray diffraction (XRD) in our previous study, in order to check the presence of Mn atoms in the interstitial site in wurtzite crystal. The axis scan around and axes and the plane scan around (1010) plane revealed that almost all the Mn atoms were in the substitutional site of wurtzite GaN crystal. For self-organized dots of (Ga,Mn)N grown on AlN by MBE, the PIXE spectra were measured and the Mn composition in the dot layer was estimated from the ratio of emission intensity of Mn and Ga K α lines. At a result, it was found that the Mn composition in the dots was higher by two or three times than that in thick epilayers grown with the addition of the same amount of Mn flux.
- Published
- 2006
4. Photoacoustic Spectroscopy of Defect States in Etched and Air-annealed CuInSe2 Single Crystals
- Author
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R. D. Tomlinson, A. Zegadi, H. Neumann, M. V. Yakushev, and M. A. Slifkin
- Subjects
Annealing (metallurgy) ,Chemistry ,Mineralogy ,Polishing ,General Chemistry ,Electron ,Condensed Matter Physics ,Molecular physics ,Isotropic etching ,Spectral line ,Ion channeling ,Air annealing ,General Materials Science ,Photoacoustic spectroscopy - Abstract
Photoacoustic spectra of cleaved, polished and etched, and air-annealed n-type CuInSe 2 single crystals are measured at different frequencies between 30 and 312 Hz. The spectra related to the bulk of the crystals exhibit five structures due to defects that are also present in p-type crystals. Polishing and etching as well as subsequent air annealing at 100, 200 and 300°C reveal rather complex changes of the defect equilibrium in the near-surface region of the crystals which include both relative concentration changes of existing defects and creation of new defects. The results for polished and etched crystals correspond to trends expected from etching induced local modifications of the composition and structure as revealed by electron spectroscopies and ion channeling. Air annealing is found to affect all existing defects and to create up to five new defects which cannot be explained in terms of the related point defect model proposed by CAHEN and NOUFI
- Published
- 1995
5. Influence of proton implantation on the properties of CuInSe2 single crystals (I). Ion channeling study of lattice damage
- Author
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H. Neumann, M. V. Yakushev, and R. D. Tomlinson
- Subjects
Ion implantation ,Proton ,Chemistry ,Ion channeling ,Semiconductor materials ,Radiochemistry ,Proton implantation ,Analytical chemistry ,General Materials Science ,General Chemistry ,Condensed Matter Physics - Abstract
The lattice damage of p-type CuInSe2 single crystals implanted with 10 keV protons in the fluence range from 2.5 · 1014 to 8 · 1015 cm−2 was investigated using the Rutherford backscattering/channeling technique. At proton fluences up to about 2 · 1015 cm−2 radiation annealing of the defects is observed which is ascribed to very high defect concentrations in the unimplanted samples. At higher fluences radiation damage occurs but the concentration of radiation induced defects ramains low. There are indications that selenium interstitials or defect complexes with selenium interstitials involved are stable defects at room temperature. Die Gitterschadigung p-leitender CuInSe2-Einkristalle, die mit 10 keV–Protonen im Dosisbereich von 2,5 · 1014 bis 8 · 1015 cm−2 implantiert wurden, ist mit der Methode der Rutherford-Ruckstreuung und der Kanalisierungstechnik untersucht worden. Fur Protonendosen bis zu etwa 2 · 1015 cm−2 wird eine Strahlenauscheilung der Defekte beobachtet, was sehr hohen Defektkonzentrationen in den nicht implantierten Proben zugeschrieben wird. Bei hoheren Dosen tritt eine Strahlenschadigung auf, die Konzentration der strahlungsinduzierten Defekte bleibt jedoch klein. Es gibt Hinweise darauf, das entweder Selenatome auf Zwischengitterplatzen oder unter Beteiligung von Selenatomen auf Zwischengitterplatzen gebildete Defektkomplexe bei Raumtemperatur stabil sind.
- Published
- 1994
6. Effect of plasma hydrogenation on the defect properties of CuInSe2 single crystals
- Author
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A. Zegadi, Arthur E. Hill, M. A. Slifkin, R. D. Tomlinson, Philip A. Jones, M. V. Yakushev, Richard D. Pilkington, and H. Neumann
- Subjects
Passivation ,Hydrogen ,Chemistry ,Semiconductor materials ,Analytical chemistry ,chemistry.chemical_element ,General Chemistry ,Condensed Matter Physics ,Plasma hydrogenation ,Crystallographic defect ,Ion channeling ,Physical chemistry ,General Materials Science ,Thermal stability - Abstract
The defect properties of p-type CuInSe2 single crystals hydrogenated by diffusion from a plasma source are investigated using the Rutherford backscattering/channeling technique and photoacoustic spectroscopy. Plasma hydrogenation is found to produce severe lattice damage, to affect the intrinsic defect equilibrium in the near surface region of the crystals and to create an additional donor. A defect formation model including both defect passivation by hydrogen and damage induced defect creation is proposed to explain the experimental data. The thermal stability of the property modifications is limited to temperatures below about 100 °C. Die Defekteigenschaften p-leitender CuInSe2-Einkristalle, die mittels Diffusion aus einer Plasmaquelle hydrogenisiert wurden, sind mittels Rutherford-Ruckstreuung, Ionenkanalisierung und photoakustischer Spektroskopie untersucht worden. Es zeigt sich, das die Plasmahydrogenisierung zu einer schweren Gitterschadigung fuhrt, das Eigendefektgleichgewicht im oberflachennahen Bereich der Kristalle beeinflust und zur Bildung eines zusatzlichen Donators fuhrt. Zur Erklarung der experimentellen Daten wird ein Defektbildungsmodell vorgeschlagen, das sowohl die Passivierung von Defekten durch Wasserstoff als auch Defektbildungsprozesse infolge der Gitterschadigung berucksichtigt. Die thermische Stabilitat der durch die Hydrogenisierung verusachten Eigenschaftsanderungen ist auf Temperaturen unterhalb etwa 100 °C beschrankt.
- Published
- 1994
7. Defect studies in CuBIIIC2VI chalcopyrite compounds using the ion channeling technique
- Author
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H. Neumann
- Subjects
Yield (engineering) ,Chalcopyrite ,Bridgman method ,Chemistry ,Semiconductor materials ,Inorganic chemistry ,Analytical chemistry ,General Chemistry ,Condensed Matter Physics ,Crystallographic defect ,Fluence ,Ion channeling ,visual_art ,visual_art.visual_art_medium ,General Materials Science - Abstract
Based on simple approximations the backscattering minimum yield is estimated for axial ion channeling in perfect crystals of six CuBIIIC chalcopyrite compounds. The results obtained for CuInSe2 are compared with experimental channeling spectra. Point defect concentrations up to about 1021 cm−3 are estimated for CuInSe2 single crystals grown by the vertical Bridgman method. A simple power law is found for the fluence dependence of the damage density in oxygen implanted CuInSe2 single crystals. Auf der Grundlage einfacher Naherungen wird die minimale Ruckstreuausbeute fur axiale Ionenkanalisierung in perfekten Kristallen von sechs CuBIIIC-Chalkopyritverbindungen abgeschatzt. Die fur CuInSe2 erhaltenen Resultate werden mit experimentellen Kanalisierungsspektren verglichen. Fur nach der vertikalen Bridgman-Methode gezuchtete CuInSe2-Einkristalle werden Punktdefektkonzentrationen bis zu etwa 1021 cm−3 abgeschatzt. Fur die Dosisabhangigkeit der Defektdichte in mit Sauerstoff implantierten CuInSe2-Einkristallen wird ein einfaches Potenzgesetz gefunden.
- Published
- 1994
8. Big channeling effects at low-energy ion implantation in silicon
- Author
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J. Bollmann, H. Klose, and A. Mertens
- Subjects
Range (particle radiation) ,Materials science ,Silicon ,business.industry ,Semiconductor materials ,chemistry.chemical_element ,Condensed Matter Physics ,Semimetal ,Electronic, Optical and Magnetic Materials ,Ion implantation ,Low energy ,chemistry ,Ion channeling ,Optoelectronics ,business - Published
- 1986
9. Interstitial positions and vibrational amplitudes of hydrogen in metals investigated by fast ion channeling
- Author
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H.-D. Cabstanjen
- Subjects
Amplitude ,Hydrogen ,Chemistry ,Ion channeling ,chemistry.chemical_element ,Atomic physics ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials - Published
- 1980
10. A Kinetic Theory for the Motion of Accelerated Particles in Solids. I. Derivation of Basic Equations
- Author
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A. R. Urmanov, A. M. Linetskaya, and A. A. Puzanov
- Subjects
Physics ,Classical mechanics ,Kinetic equations ,Ion channeling ,Kinetic theory of gases ,Motion (geometry) ,Type (model theory) ,Condensed Matter Physics ,Phase density ,Electronic, Optical and Magnetic Materials - Abstract
An approach to the derivation of kinetic equations describing the motion of accelerated particles in solids is suggested based on the microscopic phase density method. It is shown that the unified approach suggested makes possible to obtain all the known kinetic equations used for describing the interaction of accelerated particles with condensed medium as well as more exact expressions for the coefficients of these equations. A new type of the kinetic equation is obtained describing, in particular, ion channeling in complex single crystals. [Russian Text Ignored]
- Published
- 1986
11. Internal distortion in GaInAsP quaternary alloys studied by ion channeling
- Author
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R. Flagmeyer, H. Frey, and Volker Gottschalch
- Subjects
Crystallography ,Proton ,Chemistry ,Ion channeling ,Distortion ,Crystal structure ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Ion - Abstract
First ion channeling analyses of quaternary GaInAsP films on InP (100) substrates are reported. The influence of the distorted crystal lattice on the channeling effect is demonstrated by Rutherford backscattering of He+ ions channeled along the [100] direction and by angular scans of proton induced GaKα and AsKβ radiation. Erste Channeling-Analysen von quaternaren GaInAsP-Schichten auf InP(100)-Substrat werden vorgestellt. Anhand der Rutherfordruckstreuung in [100]-Richtung kanalisierter He+-Ionen und der Winkelverteilung protoneninduzierter GaKα - und AsKβ-Strahlung wird der Einflus des verzerrten Kristallgitters auf den Channeling-Effekt nachgewiesen.
- Published
- 1988
12. Beam-induced impurity displacement during channelling measurements on phosphorus diffused silicon
- Author
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R. F. Peart, R. C. Newman, D. J. Stirland, R. W. Bicknell, and C. Allen
- Subjects
Materials science ,Silicon ,Phosphorus ,Radiochemistry ,chemistry.chemical_element ,Condensed Matter Physics ,Channelling ,Electronic, Optical and Magnetic Materials ,chemistry ,Helium ions ,Impurity ,Ion channeling ,Atomic physics ,Displacement (fluid) ,Beam (structure) - Published
- 1974
13. Bloch Wave Channeling and Extended Lindhard's Theory
- Author
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Yoshi-Hiko Ohtsuki and Y. Kubota
- Subjects
Physics ,symbols.namesake ,Mathieu function ,Differential equation ,Ion channeling ,Quantum mechanics ,symbols ,Inelastic scattering ,Condensed Matter Physics ,Quantum ,Electronic, Optical and Magnetic Materials ,Bloch wave - Abstract
Lindhard's theory for ion channeling is extended to a quantum mechanical formulation, and the “Bloch wave channeling”; is interpreted with the planar continuum potential including inelastic scattering. Die Lindhardsche Theorie fur Ionenchanneling wird quantenmechanisch formuliert. Die anomale Transmission der Blochwellen (Blochwellenchanneling) wird mit dem Kontinuumspotential der Gitterebenen unter Berucksichtigung inelastischer Streuung interpretiert.
- Published
- 1972
14. Determination of Interstitial Deuterium Locations in Niobium by Channeling
- Author
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H. D. Carstanjen and R. Sizmann
- Subjects
Nuclear reaction ,Crystallography ,Deuterium ,chemistry ,General Chemical Engineering ,Ion channeling ,Niobium ,chemistry.chemical_element ,Crystal structure - Abstract
Channeling provides a new technique for determining the lattice positions of deuterium atoms in single crystals at low concentrations. In the present investigation the D(d,p)T reaction yield was measured around the 〈100〉 and the 〈111〉 incidence directions of a 300 keV deuteron beam penetrating through niobium loaded with 2 atomic percent deuterium. In combination with flux and energy distribution calculations of the channeled deuterons the conclusion was reached that at 150 K the dissolved deuterium atoms are located at tetrahedral lattice sites. Measurements at room temperature indicate that deuterium at 295 K occupies the same sites. Channeling liefert eine neue Methode zur Bestimmung der Gitterpositionen von Deuteriumatomen in Einkristallen bei niedrigen Konzentrationen. In der vorliegenden Arbeit wurde die Protonenausbeute aus einer D(d, p) T-Kernreaktion zwischen Deuteriumatomen, gelost in einem Niobeinkristall (Konzentration: 2 Atomprozent), und einem 300 keV-Deuteronenstrahl in Abhangigkeit vom Einfallswinkel der Deuteronen zur 〈100〉 und 〈111〉)-Achse des Kristalls gemessen. Durch Vergleich dieser Protonenausbeuteprofile, deren Struktur empfindlich von der jeweiligen Zwischengitterposition der Deuteriumatome abhangt, mit Profilen, die aus der Deuteronenflus- und energieverteilung fur verschiedene Deuteriumpositionen berechnet wurden, konnte geschlossen werden, daO Deuterium bei 150°K und einer Konzentration von 2 Atomprozent in Niob Tetraederplatze einnimmt. Messungen bei Zimmertemperatur ergaben, das Deuterium bei 295°K die gleichen Platze besetzt.
- Published
- 1972
15. Formation of Radiation Defects by Channeling Particles
- Author
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M. A. Kumakhov
- Subjects
Chemistry ,Ion channeling ,Atomic physics ,Radiation ,Condensed Matter Physics ,Threshold energy ,Atomic displacement ,Electronic, Optical and Magnetic Materials ,Ion - Abstract
The problem of interaction of channeling ions with chain nuclei forming the channel is considered. Born-Mayer potentials for CuCu, Moliere, Firsov, and Lindhard potentials are considered as interaction potentials. The energy transferred to the chain nuclei is estimated. In some cases this energy may exceed the threshold energy of atomic displacement. The light channeling ions do not produce displacements. The problem of the influence of the channeling effect on the radiation cascade is also considered. It is shown that this influence is insignificant except for the cases when the initially displaced atoms have high energies. Es wird die Wechselwirkung von kanalbildenden Ionen mit dein Kettenkernen, die den Kanal aufbauen, untersucht. Als Wechselwirkungspotentiale werden Born-Mayer-Potentiale fur CuCu, Moliere-, Firsov- und Lindhard-Potentiale berucksichtigt. Die auf die Kettenkerne ubertragene Energie wird bestimmt. In einigen Fallen kann diese Energie die Schwellenenergie fur Atomverlagerung ubersteigen. Die leichten kanalbildenden Ionen verursachen keine Verlagerungen. Der Einflus des Kanalbildungseffektes auf die Strahlungskaskaden wird ebenfalls untersucht. Es wird gezeigt, das dieser Effekt, auser fur die Falle, wo die ursprunglich verlagerten Atome hohe Energien besitzen, unbedeutend ist.
- Published
- 1968
16. The analysis of thin epitaxial layers of GaAs using MeV α-particles
- Author
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D. R. Wood and D. V. Morgan
- Subjects
Materials science ,Impurity ,Ion channeling ,Analytical chemistry ,Alpha particle ,Condensed Matter Physics ,Epitaxy ,α particles ,Electronic, Optical and Magnetic Materials - Published
- 1973
17. Scattering Effects with Channeled Ions
- Author
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R. von Jan
- Subjects
Transverse plane ,Angular distribution ,Scattering ,Chemistry ,Ion channeling ,Atomic physics ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Ion ,Relative energy - Abstract
The angular distribution F(α) is calculated for fast ions that have traversed a lattice channel with an axis in the direction α = 0. For both axial and planar transmission channeling, intensity maxima are expected at , where α0 is the angle of incidence, and ηt and ηl denote the relative energy loss of transverse and longitudinal motion. The scattering effects provide a direct method to measure separately longitudinal and transverse stopping powers for channeled ions. Die Winkelverteilung F(α) schneller Ionen wird nach Durchstrahlung von Kristallen langs Gitterkanalen berechnet. Wenn die Kanalachsen in Richtung α = 0 liegen, erwartet man sowohl fur achsiale als auch fur ebene Kanalleitung Intensitatsmaxima bei . Hierbei ist α0 der Einfallswinkel der Ionen, wahrend ηt und ηl den relativen Energieverlust der transversalen und longitudinalen Bewegungskomponenten bezeichnen. Diese Streueffekte ermoglichen eine direkte Messung von transversalem und longitudinalem Bremsvermogen fur kanalisierte Ionen.
- Published
- 1968
18. Channelling patterns based on penetration of low-energy ions
- Author
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Č. Jech
- Subjects
Crystallography ,Low energy ,Silicon ,Chemistry ,Ion channeling ,Analytical chemistry ,chemistry.chemical_element ,Penetration (firestop) ,Condensed Matter Physics ,Channelling ,Electronic, Optical and Magnetic Materials ,Ion - Abstract
A method for recording channelling patterns based on channelled penetration of low energy radioactive inert gas ions was improved by introducing a bombardment technique with a divergent ion beam of tracer ions. Channelling patterns were obtained with {111}, {110}, and {100} surfaces of silicon using 10 keV Kr-85 and Xe-133 ions as tracers. A good resolution of individual channelling directions and planes exhibiting enhanced penetration of low energy ions was achieved. Alternative procedures for revealing channelling patterns are discussed. Eine Methode zur Registrierung von Kanalisierungsdiagrammen, die auf einem kanalisierten Eindringen von niederenergetischen radioaktiven Edelgasionen beruht, wurde durch Einfuhrung einer Bombardierungstechnik mit einem divergenten Tracer-Ionenstrahlbundel vervollkommnet. Es wurden die Kanalisierungsdiagramme von {111}, {110} und {100} Siliziumoberflachen durch Anwendung von 10 keV Kr-85 und Xe-133 Ionen erhalten. Eine gute Auflosung der individuellen Kanalisierungsrichtungen und Ebenen, in denen niederenergetische Ionen eine erhohte Durchdringungsfahigkeit aufweisen, wurde erreicht. Andere Verfahren zur Registrierung von Kanalisierungsdiagrammen werden diskutiert.
- Published
- 1970
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