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This review explains the historical perspective of single-event effects, single-event transitions, and single-event upsets. It delves into the concept of critical charge and offers a comprehensive classification of single-event upsets. The main aspects of this work involve an explanation of the root causes of soft errors in VLSI circuits. The primary source of radiation in the space environment is thoroughly analyzed, discussing particle generation and interactions. This examination includes the behavior of energetic alpha particles and their interactions in silicon, as well as the impact of high-energy neutrons and nuclear interactions in silicon. Additionally, the study presents a detailed exploration of soft error simulation and calculation methods, enabling the estimation of soft error rates (SERs) and mean time to failure (MTTF). The focus of this research is the investigation of soft errors in memory and sequential circuitry, demonstrating the potential risks posed by these errors in electronic systems. The findings of this research provide a valuable foundation for developing strategies to mitigate soft errors and enhance the reliability of VLSI circuits for space applications. To highlight understanding, we have ended most of the sections and subsections with the questions. These questions can help researchers explore related research directions. [ABSTRACT FROM AUTHOR]

Silicon (Si) plays an important role in crop yields and is known as a beneficial element for gramineous plants. Si sources used as fertilizers in Brazil are mainly industrial by-products and naturally occurring silica-rich minerals, such as calcium silicates. There is still relatively little information about Si fertilization in the country, especially in the potential of diatomaceous Earth (DE) as a Si fertilizer compared to other widely used sources. In this context, we aimed at assessing the efficiency of a DE-based fertilizer as Si supplier to plants of sugarcane and maize grown on two soil types. We used a calcium silicate source widely used in Brazil for comparison as a positive control. Results showed that the DE fertilizer application provided linear increase in the biomass of sugarcane and maize in the tested soils. The improvement in crop biomass correlated well with the Si accumulation in the shoots of the plants. Besides, DE fertilizer improved crop performance by increased N, P, K, and S concentrations in plants. When compared to the calcium silicate source, the DE fertilizer provided the same Si supplying potential for the tested plants and higher relative biomass yield. [ABSTRACT FROM AUTHOR]

The influence of the single event effects (SEE) induced by neutron up to 14 MeV on ferroelectric random access memory (FRAM) is simulated by the Monte Carlo method. Simulation results show that single-event upset (SEU) occurs in FRAM when the neutron energy is greater than 6 MeV, and the average energy deposition of neutrons in the sensitive volume increases with increasing neutron energy. Neutron SEU in FRAM occurs when the energy deposition of a single secondary particles generated by a nuclear reaction in the sensitive region exceeds the critical energy. The neutron SEU cross-section of FRAM increases exponentially with increasing energy in the range of 6–14 MeV, and the SEU cross-section is about 1.39 × 10−14 cm2 at 14 MeV. These findings are due to concomitant increases in the variety and numbers of secondary particles whose energy deposition in the sensitive region exceeds the critical energy. [ABSTRACT FROM AUTHOR]