1. Thickness dependent structural and electrical properties of pulsed laser deposited Y0.95Ca0.05MnO3 thin films and the effect of high energy oxygen ion irradiation.
- Author
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Gadani, Keval, Mirza, Faizal, Dhruv, Davit, Joshi, A. D., Asokan, K., Solanki, P. S., and Shah, N. A.
- Subjects
PULSED laser deposition ,MATERIALS science ,DIELECTRIC relaxation ,THIN film deposition ,ELECTRIC properties ,PULSED lasers ,IRRADIATION - Abstract
In the present communication, structural and electrical properties of Y
0.95 Ca0.05 MnO3 (YCMO) manganite thin films, having different thicknesses grown on (100) single crystalline Nb:SrTiO3 (SNTO) substrate using pulsed laser deposition (PLD) technique, have been investigated. Influence of 100 MeV O+7 energetic ion irradiation has been understood on the basis of structure–property correlations across the lattice of YCMO manganite. Influence of YCMO film thickness and ion fluence on the electrical properties have also been explored in the context of lattice strain, crystallite size (CS), crystallinity, defect state, local annealing effect and three dimensional disorder. YCMO/SNTO interface experiences the presence of tensile strain which is found to vary between +1.02 and +1.88% for 100 nm YCMO/SNTO thin film whereas it is found to decrease monotonically from +1.50 to +0.98% for 200 nm and +1.40 to +0.92% for 300 nm upon increase in ion fluence. For higher thicknesses of YCMO/SNTO films (i.e. 200 and 300 nm), CS (estimated using Scherrer's formula) is found to increase from 19.73 nm for pristine to 25.01 nm for higher influence irradiated 200 nm film and from 24.91 nm for pristine to 27.97 nm for higher influence irradiated 300 nm film which has been ascribed to the local annealing effect across the YCMO/SNTO thin film lattices. Variation in dielectric constant with frequency, YCMO layer thickness and ion fluence has been understood on the bases of lattice strain, defect state, CS, crystallite boundaries, dipolar relaxation and universal dielectric response (UDR) model. Nature of ac conductivity has been understood well in the context of Jonscher's power law fits where correlated barrier hopping (CBH) mechanism has been confirmed as a responsible process for charge conduction across the YCMO/SNTO interfaces. Maximum barrier height (Wm ) has been derived using its relation with power exponent from Jonscher's power law fits to ac conductivity data and its values are found to vary nonmonotonically between 0.3218 and 0.4849 eV for 100 nm YCMO/SNTO film however it gets enhanced from 0.2382 to 0.3820 eV for 200 nm and from 0.1977 to 0.2203 eV for 300 nm YCMO/SNTO films upon increase in oxygen ion fluence. These variations have been ascribed to the dominant impact of high resistive insulating nature of core of the YCMO crystallites and three dimensional disorder across YCMO manganite lattice. Present report serves a complex simultaneous impact of YCMO layer thickness, ion fluence and related structural aspects on the electrical properties of YCMO/SNTO films where defect state can be regenerated through well established experimental tool of SHI irradiation in a controlled way. The electric properties of YCMO/SNTO thin films are of paramount importance in a variety of technological applications and are of fundamental importance for materials science research. [ABSTRACT FROM AUTHOR]- Published
- 2024
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