1. Effect of point defects on electrochemical performances of α-Ga2O3 microrods prepared with hydrothermal process for supercapacitor application.
- Author
-
Hu, Yan-Ling, Fu, Zhengbo, Yuan, Ronghuo, Wang, Zihan, Xu, Zhihan, Dai, Yan, Fu, Yao, Li, Jiacheng, Zou, Zhimin, Jiang, Chunhai, Yang, Yun, and Song, Guang-Ling
- Abstract
α-Ga
2 O3 microrods was deposited on carbon cloth (CC) using a hydrothermal process followed by a high-temperature annealing in air. The microstructure of the obtained Ga2 O3 /CC composite electrodes were characterized with scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. Their electrochemical performances were tested with electrochemical impedance spectroscopy (EIS), Mott-Schottky (MS), cyclic voltammetry (CV) and galvanostatic charge/discharge techniques (GCD). By comparing the electron densities and mobilities of the Ga2 O3 /CC electrodes prepared with different hydrothermal durations, the doping mechanisms of point defects in α-Ga2 O3 were revealed. The point defects in α-Ga2 O3 including Ga-oxygen vacancies (Ga-VO ), gallium vacancies (VGa ), and VGa -VO complexes were all identified as the scattering centers. By extending the hydrothermal duration to more than 6 h, the electronic conductivity of the Ga2 O3 /CC electrode was enhanced by reducing the number of point defects in α-Ga2 O3 . The Ga2 O3 /CC-6h aqueous symmetrical supercapacitor (SC) showed a remarkable increase in the electrochemical performance by exhibiting a specific areal capacitance of 1394 mF cm−2 at 0.5 mA cm−2 , with 67% of the capacitance retained when the current density was increased to 20 mA cm−2 , and 76.5% of capacitance retention after 20,000 cycles under a current density of 10 mA cm−2 . The point defect mechanism identified in the article would pave the way to develop novel energy storage devices based on α-Ga2 O3 in the future. [ABSTRACT FROM AUTHOR]- Published
- 2024
- Full Text
- View/download PDF