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In this chapter, we review results obtained by conventional and advanced electron microscopy related techniques of complex 1-D nanostructures such as spontaneous core–shell AlxGa 1−x N/GaN (0001) nanowires, ZnO/Si(111) nanorods, ZnO/CdTe (111) nanowires, and InAsxP1−x/InP(001) quantum wires.

It is well known that there is intense interest in expanding the usable wavelength for electronic devices. Research efforts are dedicated to develop GaAs technology in order to achieve emission at 1.3 and 1.55 µm, so GaAs could be used for telecommunication applications [1]. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony to these nanostructures is an effective solution to obtain redshift emission, even at room temperature [2].

One of the main requirements for the development of quantum computing is the ability of manufacturing single photon emitters. Self assembled semiconductor nanostructures are ones of the most reliable candidates for this application, once control of size and spatial location is achieved. The droplet epitaxy technique allows growth of low density distributions of nanostructures with good optical quality, constituting a promising method for single photon devices and quantum applications [1].