Characterization and modelling of semiconductor quantum nanostructures grown by droplet epitaxy

One of the main requirements for the development of quantum computing is the ability of manufacturing single photon emitters. Self assembled semiconductor nanostructures are ones of the most reliable candidates for this application, once control of size and spatial location is achieved. The droplet epitaxy technique allows growth of low density distributions of nanostructures with good optical quality, constituting a promising method for single photon devices and quantum applications [1].