1. Spatially resolved study of Schottkey barriers
- Author
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P. Perfetti, Antonio Cricenti, O. Bergossi, Renato Generosi, Tiziana dell’Orto, Carlo Coluzza, J. Almeida, Daniel Courjon, M. Spajer, Stephane Davy, and Giancarlo Faini
- Subjects
Materials science ,business.industry ,Scanning electron microscope ,Optical engineering ,Near-field optics ,Gallium arsenide ,Photoemission electron microscopy ,chemistry.chemical_compound ,Semiconductor ,Optics ,chemistry ,Microscopy ,Near-field scanning optical microscope ,business - Abstract
We studied the fully-formed (80 angstroms) Pt/GaP and (140 angstroms) Au/GaAs interfaces by scanning near-field optics microscopy, internal photoemission, atomic force microscopy, and by x-ray photoemission electron microscopy. These complementary techniques enabled us to correlate the spatial variations of the diodes transport properties with the chemical and topographic inhomogeneities of the buried metal-semiconductor interfaces.© (1996) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
- Published
- 1996
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